JP2001181854A - 無電解めっき液及びこれを用いた配線形成方法 - Google Patents

無電解めっき液及びこれを用いた配線形成方法

Info

Publication number
JP2001181854A
JP2001181854A JP36546499A JP36546499A JP2001181854A JP 2001181854 A JP2001181854 A JP 2001181854A JP 36546499 A JP36546499 A JP 36546499A JP 36546499 A JP36546499 A JP 36546499A JP 2001181854 A JP2001181854 A JP 2001181854A
Authority
JP
Japan
Prior art keywords
plating solution
plating
wiring
copper
electroless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP36546499A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001181854A5 (https=
Inventor
Hiroaki Inoue
裕章 井上
Koji Mishima
浩二 三島
Kenji Nakamura
憲二 中村
Shuichi Okuyama
修一 奥山
Tetsuro Matsuda
哲朗 松田
Hisafumi Kaneko
尚史 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Toshiba Corp
JCU Corp
Original Assignee
Ebara Corp
Toshiba Corp
Ebara Udylite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp, Toshiba Corp, Ebara Udylite Co Ltd filed Critical Ebara Corp
Priority to JP36546499A priority Critical patent/JP2001181854A/ja
Priority to KR1020017010619A priority patent/KR20010102294A/ko
Priority to EP00985822A priority patent/EP1160356A1/en
Priority to PCT/JP2000/009099 priority patent/WO2001046494A1/ja
Priority to US09/890,455 priority patent/US20030024431A1/en
Priority to TW089127647A priority patent/TW581823B/zh
Publication of JP2001181854A publication Critical patent/JP2001181854A/ja
Publication of JP2001181854A5 publication Critical patent/JP2001181854A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C23C18/405—Formaldehyde
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
JP36546499A 1999-12-22 1999-12-22 無電解めっき液及びこれを用いた配線形成方法 Pending JP2001181854A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP36546499A JP2001181854A (ja) 1999-12-22 1999-12-22 無電解めっき液及びこれを用いた配線形成方法
KR1020017010619A KR20010102294A (ko) 1999-12-22 2000-12-21 무전해도금액 및 이것을 사용한 배선형성방법
EP00985822A EP1160356A1 (en) 1999-12-22 2000-12-21 Electroless plating solution and method of forming wiring with the same
PCT/JP2000/009099 WO2001046494A1 (en) 1999-12-22 2000-12-21 Electroless plating solution and method of forming wiring with the same
US09/890,455 US20030024431A1 (en) 1999-12-22 2000-12-21 Electroless plating solution and method of forming wiring with the same
TW089127647A TW581823B (en) 1999-12-22 2000-12-22 Electroless plating solution and method for forming wire by using the electroless plating solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36546499A JP2001181854A (ja) 1999-12-22 1999-12-22 無電解めっき液及びこれを用いた配線形成方法

Publications (2)

Publication Number Publication Date
JP2001181854A true JP2001181854A (ja) 2001-07-03
JP2001181854A5 JP2001181854A5 (https=) 2004-12-24

Family

ID=18484335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36546499A Pending JP2001181854A (ja) 1999-12-22 1999-12-22 無電解めっき液及びこれを用いた配線形成方法

Country Status (6)

Country Link
US (1) US20030024431A1 (https=)
EP (1) EP1160356A1 (https=)
JP (1) JP2001181854A (https=)
KR (1) KR20010102294A (https=)
TW (1) TW581823B (https=)
WO (1) WO2001046494A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100434946B1 (ko) * 2001-09-28 2004-06-10 학교법인 성균관대학 무전해도금방식을 이용한 반도체 소자의 구리배선형성방법
JP2004304167A (ja) * 2003-03-20 2004-10-28 Advanced Lcd Technologies Development Center Co Ltd 配線、表示装置及び、これらの形成方法
JP2007154307A (ja) * 2005-11-08 2007-06-21 Univ Waseda 無電解銅めっき浴、無電解銅めっき方法及びｕｌｓｉ銅配線形成方法
JP2011154380A (ja) * 2003-03-20 2011-08-11 Toshiba Mobile Display Co Ltd 表示装置の形成方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100758186B1 (ko) * 2000-03-21 2007-09-13 와코 쥰야꾸 고교 가부시키가이샤 반도체 기판 세정제 및 세정 방법
JP2003147541A (ja) * 2001-11-15 2003-05-21 Hitachi Ltd 無電解銅めっき液、無電解銅めっき用補給液及び配線板の製造方法
US6875260B2 (en) 2002-12-10 2005-04-05 Enthone Inc. Copper activator solution and method for semiconductor seed layer enhancement
US6897152B2 (en) 2003-02-05 2005-05-24 Enthone Inc. Copper bath composition for electroless and/or electrolytic filling of vias and trenches for integrated circuit fabrication
KR20080083790A (ko) * 2007-03-13 2008-09-19 삼성전자주식회사 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법
US20080248194A1 (en) * 2007-04-04 2008-10-09 L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for producing a copper layer on a substrate in a flat panel display manufacturing process
FR3013995A1 (fr) * 2013-11-29 2015-06-05 Commissariat Energie Atomique Procede ameliore de metallisation d'un materiau poreux

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3473890D1 (en) * 1983-07-25 1988-10-13 Hitachi Ltd Electroless copper plating solution
JPH0684545B2 (ja) * 1985-03-29 1994-10-26 日立化成工業株式会社 無電解銅めっき液
JPH07193214A (ja) * 1993-12-27 1995-07-28 Mitsubishi Electric Corp バイアホール及びその形成方法
KR960005765A (ko) * 1994-07-14 1996-02-23 모리시다 요이치 반도체 장치의 배선형성에 이용하는 무전해 도금욕 및 반도체 장치의 배선성형방법
JPH09316649A (ja) * 1996-05-27 1997-12-09 Matsushita Electric Ind Co Ltd 無電解めっき液
JP3276919B2 (ja) * 1998-03-06 2002-04-22 英夫 本間 樹脂基材への高密着性めっき方法およびこれに用いる銅めっき液
JP3217319B2 (ja) * 1998-12-11 2001-10-09 松下電器産業株式会社 半導体装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100434946B1 (ko) * 2001-09-28 2004-06-10 학교법인 성균관대학 무전해도금방식을 이용한 반도체 소자의 구리배선형성방법
JP2004304167A (ja) * 2003-03-20 2004-10-28 Advanced Lcd Technologies Development Center Co Ltd 配線、表示装置及び、これらの形成方法
JP2011154380A (ja) * 2003-03-20 2011-08-11 Toshiba Mobile Display Co Ltd 表示装置の形成方法
US8110748B2 (en) 2003-03-20 2012-02-07 Toshiba Mobile Display Co., Ltd. Wiring, display device and method of manufacturing the same
JP2012064953A (ja) * 2003-03-20 2012-03-29 Toshiba Mobile Display Co Ltd 配線の形成方法及びその配線を有する表示装置の形成方法
JP2007154307A (ja) * 2005-11-08 2007-06-21 Univ Waseda 無電解銅めっき浴、無電解銅めっき方法及びｕｌｓｉ銅配線形成方法

Also Published As

Publication number Publication date
US20030024431A1 (en) 2003-02-06
WO2001046494A1 (en) 2001-06-28
TW581823B (en) 2004-04-01
KR20010102294A (ko) 2001-11-15
EP1160356A1 (en) 2001-12-05

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