KR20010102294A - 무전해도금액 및 이것을 사용한 배선형성방법 - Google Patents

무전해도금액 및 이것을 사용한 배선형성방법 Download PDF

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Publication number
KR20010102294A
KR20010102294A KR1020017010619A KR20017010619A KR20010102294A KR 20010102294 A KR20010102294 A KR 20010102294A KR 1020017010619 A KR1020017010619 A KR 1020017010619A KR 20017010619 A KR20017010619 A KR 20017010619A KR 20010102294 A KR20010102294 A KR 20010102294A
Authority
KR
South Korea
Prior art keywords
copper
plating solution
wiring
electroless
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020017010619A
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English (en)
Korean (ko)
Inventor
이노우에히로아키
미시마고지
나카무라겐지
오쿠야마슈이치
마츠다데츠오
가네코히사시
Original Assignee
마에다 시게루
가부시키 가이샤 에바라 세이사꾸쇼
니시무로 타이죠
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마에다 시게루, 가부시키 가이샤 에바라 세이사꾸쇼, 니시무로 타이죠, 가부시끼가이샤 도시바 filed Critical 마에다 시게루
Publication of KR20010102294A publication Critical patent/KR20010102294A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C23C18/405—Formaldehyde
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020017010619A 1999-12-22 2000-12-21 무전해도금액 및 이것을 사용한 배선형성방법 Ceased KR20010102294A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-1999-00365464 1999-12-22
JP36546499A JP2001181854A (ja) 1999-12-22 1999-12-22 無電解めっき液及びこれを用いた配線形成方法
PCT/JP2000/009099 WO2001046494A1 (en) 1999-12-22 2000-12-21 Electroless plating solution and method of forming wiring with the same

Publications (1)

Publication Number Publication Date
KR20010102294A true KR20010102294A (ko) 2001-11-15

Family

ID=18484335

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017010619A Ceased KR20010102294A (ko) 1999-12-22 2000-12-21 무전해도금액 및 이것을 사용한 배선형성방법

Country Status (6)

Country Link
US (1) US20030024431A1 (https=)
EP (1) EP1160356A1 (https=)
JP (1) JP2001181854A (https=)
KR (1) KR20010102294A (https=)
TW (1) TW581823B (https=)
WO (1) WO2001046494A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030039980A (ko) * 2001-11-15 2003-05-22 가부시끼가이샤 히다치 세이사꾸쇼 무전해 구리 도금액, 무전해 구리 도금 보충액, 및배선판의 제조방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100758186B1 (ko) * 2000-03-21 2007-09-13 와코 쥰야꾸 고교 가부시키가이샤 반도체 기판 세정제 및 세정 방법
KR100434946B1 (ko) * 2001-09-28 2004-06-10 학교법인 성균관대학 무전해도금방식을 이용한 반도체 소자의 구리배선형성방법
US6875260B2 (en) 2002-12-10 2005-04-05 Enthone Inc. Copper activator solution and method for semiconductor seed layer enhancement
US6897152B2 (en) 2003-02-05 2005-05-24 Enthone Inc. Copper bath composition for electroless and/or electrolytic filling of vias and trenches for integrated circuit fabrication
JP2004304167A (ja) 2003-03-20 2004-10-28 Advanced Lcd Technologies Development Center Co Ltd 配線、表示装置及び、これらの形成方法
JP2011154380A (ja) * 2003-03-20 2011-08-11 Toshiba Mobile Display Co Ltd 表示装置の形成方法
JP4931196B2 (ja) * 2005-11-08 2012-05-16 学校法人早稲田大学 無電解銅めっき浴、無電解銅めっき方法及びｕｌｓｉ銅配線形成方法
KR20080083790A (ko) * 2007-03-13 2008-09-19 삼성전자주식회사 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법
US20080248194A1 (en) * 2007-04-04 2008-10-09 L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for producing a copper layer on a substrate in a flat panel display manufacturing process
FR3013995A1 (fr) * 2013-11-29 2015-06-05 Commissariat Energie Atomique Procede ameliore de metallisation d'un materiau poreux

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3473890D1 (en) * 1983-07-25 1988-10-13 Hitachi Ltd Electroless copper plating solution
JPH0684545B2 (ja) * 1985-03-29 1994-10-26 日立化成工業株式会社 無電解銅めっき液
JPH07193214A (ja) * 1993-12-27 1995-07-28 Mitsubishi Electric Corp バイアホール及びその形成方法
KR960005765A (ko) * 1994-07-14 1996-02-23 모리시다 요이치 반도체 장치의 배선형성에 이용하는 무전해 도금욕 및 반도체 장치의 배선성형방법
JPH09316649A (ja) * 1996-05-27 1997-12-09 Matsushita Electric Ind Co Ltd 無電解めっき液
JP3276919B2 (ja) * 1998-03-06 2002-04-22 英夫 本間 樹脂基材への高密着性めっき方法およびこれに用いる銅めっき液
JP3217319B2 (ja) * 1998-12-11 2001-10-09 松下電器産業株式会社 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030039980A (ko) * 2001-11-15 2003-05-22 가부시끼가이샤 히다치 세이사꾸쇼 무전해 구리 도금액, 무전해 구리 도금 보충액, 및배선판의 제조방법

Also Published As

Publication number Publication date
US20030024431A1 (en) 2003-02-06
WO2001046494A1 (en) 2001-06-28
TW581823B (en) 2004-04-01
JP2001181854A (ja) 2001-07-03
EP1160356A1 (en) 2001-12-05

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