JP2001181820A5 - - Google Patents

Download PDF

Info

Publication number
JP2001181820A5
JP2001181820A5 JP1999372088A JP37208899A JP2001181820A5 JP 2001181820 A5 JP2001181820 A5 JP 2001181820A5 JP 1999372088 A JP1999372088 A JP 1999372088A JP 37208899 A JP37208899 A JP 37208899A JP 2001181820 A5 JP2001181820 A5 JP 2001181820A5
Authority
JP
Japan
Prior art keywords
reaction chamber
filament
thin film
manufacturing apparatus
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999372088A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001181820A (ja
JP4364380B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP37208899A priority Critical patent/JP4364380B2/ja
Priority claimed from JP37208899A external-priority patent/JP4364380B2/ja
Publication of JP2001181820A publication Critical patent/JP2001181820A/ja
Publication of JP2001181820A5 publication Critical patent/JP2001181820A5/ja
Application granted granted Critical
Publication of JP4364380B2 publication Critical patent/JP4364380B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP37208899A 1999-12-28 1999-12-28 薄膜作製装置及び薄膜作製方法 Expired - Fee Related JP4364380B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP37208899A JP4364380B2 (ja) 1999-12-28 1999-12-28 薄膜作製装置及び薄膜作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37208899A JP4364380B2 (ja) 1999-12-28 1999-12-28 薄膜作製装置及び薄膜作製方法

Publications (3)

Publication Number Publication Date
JP2001181820A JP2001181820A (ja) 2001-07-03
JP2001181820A5 true JP2001181820A5 (enExample) 2007-02-15
JP4364380B2 JP4364380B2 (ja) 2009-11-18

Family

ID=18499835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP37208899A Expired - Fee Related JP4364380B2 (ja) 1999-12-28 1999-12-28 薄膜作製装置及び薄膜作製方法

Country Status (1)

Country Link
JP (1) JP4364380B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374976B2 (en) 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
WO2005107329A1 (ja) * 2004-04-27 2005-11-10 Fuji Photo Film Co., Ltd. 有機ｅｌ素子およびその製造方法
JP4782037B2 (ja) 2006-03-03 2011-09-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
JP2011195850A (ja) * 2010-03-17 2011-10-06 Fujifilm Corp 成膜方法およびガスバリアフィルム
JP5678455B2 (ja) * 2010-03-30 2015-03-04 凸版印刷株式会社 有機ｅｌ素子の製造方法及び有機ｅｌパネルの製造方法

Similar Documents

Publication Publication Date Title
US6316343B1 (en) Method of forming transparent conductive film and transparent conductive film formed by the method
US8574367B2 (en) Evaporation source
CA1125700A (en) Vacuum deposition method
WO2004105095A3 (en) Thin-film deposition evaporator
KR20070037056A (ko) 증발원 및 이를 이용한 진공증착기
CN101492807B (zh) 一种自吸气真空镀膜方法
EP0319347B1 (en) Vacuum depositing apparatus
JP2001181820A5 (enExample)
CN101591764B (zh) 材料成膜方法及其制备的有机电致发光器件
JP2003158307A (ja) 超伝導材料の製造方法
JP2004315898A (ja) 蒸着装置における蒸発源
JP3483719B2 (ja) 有機材料用蒸発源及びこれを用いた有機薄膜形成装置
JP4167833B2 (ja) 成膜装置、酸化物薄膜成膜用基板及びその製造方法
EP1535302A2 (en) Accessory member for dispensers of alkali metals
JPH10270164A (ja) 有機エレクトロルミネッセンス素子の製造方法およびその製造装置
WO2005107392A2 (en) System for vaporizing materials onto substrate surface
JP4445497B2 (ja) 薄膜蒸着装置及びこれを利用した薄膜蒸着方法
JP2002334783A (ja) 有機エレクトロルミネッセンス素子の製造装置
JP4982004B2 (ja) 防着板装置
JPH04323362A (ja) 多層膜の形成方法およびその形成装置
KR101997750B1 (ko) 인너 플레이트 및 이를 구비하는 증발원
KR100258056B1 (ko) 이중 이온 빔 스퍼터링을 이용한 Sn 타아겟으로부터의 가스센서용 SnO2 박막의 제조방법
JPH0246666B2 (enExample)
JPH0633225A (ja) 真空蒸着装置
KR20070051602A (ko) 유기물 진공 증착 장치