JP4364380B2 - 薄膜作製装置及び薄膜作製方法 - Google Patents
薄膜作製装置及び薄膜作製方法 Download PDFInfo
- Publication number
- JP4364380B2 JP4364380B2 JP37208899A JP37208899A JP4364380B2 JP 4364380 B2 JP4364380 B2 JP 4364380B2 JP 37208899 A JP37208899 A JP 37208899A JP 37208899 A JP37208899 A JP 37208899A JP 4364380 B2 JP4364380 B2 JP 4364380B2
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- Prior art keywords
- filament
- reaction chamber
- thin film
- chamber
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000003852 thin film production method Methods 0.000 title 1
- 239000010408 film Substances 0.000 claims description 49
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 238000001704 evaporation Methods 0.000 claims description 22
- 230000008020 evaporation Effects 0.000 claims description 15
- 238000007740 vapor deposition Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 2
- 239000010936 titanium Substances 0.000 description 40
- 239000007789 gas Substances 0.000 description 32
- 238000004544 sputter deposition Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 238000012423 maintenance Methods 0.000 description 7
- 238000000859 sublimation Methods 0.000 description 6
- 230000008022 sublimation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004904 shortening Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
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- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37208899A JP4364380B2 (ja) | 1999-12-28 | 1999-12-28 | 薄膜作製装置及び薄膜作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37208899A JP4364380B2 (ja) | 1999-12-28 | 1999-12-28 | 薄膜作製装置及び薄膜作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001181820A JP2001181820A (ja) | 2001-07-03 |
| JP2001181820A5 JP2001181820A5 (enExample) | 2007-02-15 |
| JP4364380B2 true JP4364380B2 (ja) | 2009-11-18 |
Family
ID=18499835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP37208899A Expired - Fee Related JP4364380B2 (ja) | 1999-12-28 | 1999-12-28 | 薄膜作製装置及び薄膜作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4364380B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7374976B2 (en) | 2002-11-22 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin film transistor |
| US7737632B2 (en) * | 2004-04-27 | 2010-06-15 | Fujifilm Corporation | Organic EL element with lamination structure and its manufacturing method |
| JP4782037B2 (ja) * | 2006-03-03 | 2011-09-28 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法及び製造装置 |
| JP2011195850A (ja) * | 2010-03-17 | 2011-10-06 | Fujifilm Corp | 成膜方法およびガスバリアフィルム |
| JP5678455B2 (ja) * | 2010-03-30 | 2015-03-04 | 凸版印刷株式会社 | 有機ｅｌ素子の製造方法及び有機ｅｌパネルの製造方法 |
-
1999
- 1999-12-28 JP JP37208899A patent/JP4364380B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001181820A (ja) | 2001-07-03 |
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