JP2001110798A - プラズマｃｖｄ装置及び薄膜製造方法 - Google Patents
プラズマｃｖｄ装置及び薄膜製造方法Info
- Publication number
- JP2001110798A JP2001110798A JP28309899A JP28309899A JP2001110798A JP 2001110798 A JP2001110798 A JP 2001110798A JP 28309899 A JP28309899 A JP 28309899A JP 28309899 A JP28309899 A JP 28309899A JP 2001110798 A JP2001110798 A JP 2001110798A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- voltage
- vacuum chamber
- electrode
- plasma cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 title claims description 26
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 32
- 239000007789 gas Substances 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 12
- 229910000077 silane Inorganic materials 0.000 claims description 12
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 9
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000001272 nitrous oxide Substances 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 abstract description 12
- 230000007935 neutral effect Effects 0.000 abstract description 10
- 239000002245 particle Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000010849 ion bombardment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 235000016796 Euonymus japonicus Nutrition 0.000 description 1
- 240000006570 Euonymus japonicus Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28309899A JP2001110798A (ja) | 1999-10-04 | 1999-10-04 | プラズマｃｖｄ装置及び薄膜製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28309899A JP2001110798A (ja) | 1999-10-04 | 1999-10-04 | プラズマｃｖｄ装置及び薄膜製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001110798A true JP2001110798A (ja) | 2001-04-20 |
| JP2001110798A5 JP2001110798A5 (https=) | 2005-11-04 |
Family
ID=17661200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28309899A Pending JP2001110798A (ja) | 1999-10-04 | 1999-10-04 | プラズマｃｖｄ装置及び薄膜製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001110798A (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007287890A (ja) * | 2006-04-14 | 2007-11-01 | Kochi Univ Of Technology | 絶縁膜の成膜方法、半導体装置の製法、プラズマｃｖｄ装置 |
| US7976673B2 (en) * | 2003-05-06 | 2011-07-12 | Lam Research Corporation | RF pulsing of a narrow gap capacitively coupled reactor |
| WO2015175934A1 (en) * | 2014-05-15 | 2015-11-19 | Anthony John Mark | Deposition and patterning using emitted electrons |
| CN114203527A (zh) * | 2021-12-15 | 2022-03-18 | 浙江大学杭州国际科创中心 | 一种碳化硅晶片热氧化的方法及装置 |
-
1999
- 1999-10-04 JP JP28309899A patent/JP2001110798A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7976673B2 (en) * | 2003-05-06 | 2011-07-12 | Lam Research Corporation | RF pulsing of a narrow gap capacitively coupled reactor |
| US8337713B2 (en) * | 2003-05-06 | 2012-12-25 | Lam Research Corporation | Methods for RF pulsing of a narrow gap capacitively coupled reactor |
| JP2007287890A (ja) * | 2006-04-14 | 2007-11-01 | Kochi Univ Of Technology | 絶縁膜の成膜方法、半導体装置の製法、プラズマｃｖｄ装置 |
| WO2015175934A1 (en) * | 2014-05-15 | 2015-11-19 | Anthony John Mark | Deposition and patterning using emitted electrons |
| US9689068B2 (en) | 2014-05-16 | 2017-06-27 | Nanoedit, Llc | Deposition and patterning using emitted electrons |
| CN114203527A (zh) * | 2021-12-15 | 2022-03-18 | 浙江大学杭州国际科创中心 | 一种碳化硅晶片热氧化的方法及装置 |
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