JP2001102676A - 光集積ユニット、光ピックアップ及び光記録媒体駆動装置 - Google Patents
光集積ユニット、光ピックアップ及び光記録媒体駆動装置Info
- Publication number
- JP2001102676A JP2001102676A JP27338099A JP27338099A JP2001102676A JP 2001102676 A JP2001102676 A JP 2001102676A JP 27338099 A JP27338099 A JP 27338099A JP 27338099 A JP27338099 A JP 27338099A JP 2001102676 A JP2001102676 A JP 2001102676A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- substrate
- integrated unit
- laser
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/123—Integrated head arrangements, e.g. with source and detectors mounted on the same substrate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B2007/0003—Recording, reproducing or erasing systems characterised by the structure or type of the carrier
- G11B2007/0006—Recording, reproducing or erasing systems characterised by the structure or type of the carrier adapted for scanning different types of carrier, e.g. CD & DVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27338099A JP2001102676A (ja) | 1999-09-27 | 1999-09-27 | 光集積ユニット、光ピックアップ及び光記録媒体駆動装置 |
| US09/670,858 US6496469B1 (en) | 1999-09-27 | 2000-09-26 | Integrated unit, optical pickup, and optical recording medium drive device |
| US10/285,025 US6693871B2 (en) | 1999-09-27 | 2002-10-30 | Integrated unit, optical pickup, and optical recording medium drive device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27338099A JP2001102676A (ja) | 1999-09-27 | 1999-09-27 | 光集積ユニット、光ピックアップ及び光記録媒体駆動装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001102676A true JP2001102676A (ja) | 2001-04-13 |
| JP2001102676A5 JP2001102676A5 (https=) | 2005-08-18 |
Family
ID=17527101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27338099A Pending JP2001102676A (ja) | 1999-09-27 | 1999-09-27 | 光集積ユニット、光ピックアップ及び光記録媒体駆動装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US6496469B1 (https=) |
| JP (1) | JP2001102676A (https=) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6868055B2 (en) | 2000-07-13 | 2005-03-15 | Sharp Kabushiki Kaisha | Optical pickup |
| KR100492534B1 (ko) * | 2002-11-29 | 2005-06-02 | 엘지전자 주식회사 | 광 발생기 모듈, 광 검출기 모듈, 그들을 결합한 광픽업장치 및 그들의 제조방법 |
| US6983005B2 (en) | 2001-01-24 | 2006-01-03 | Sharp Kabushiki Kaisha | Holographic laser and optical pickup |
| US7075960B2 (en) | 2003-01-10 | 2006-07-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser apparatus and production method thereof |
| US7355933B2 (en) | 2002-08-07 | 2008-04-08 | Sharp Kabushiki Kaisha | Optical pickup device |
| US7736923B2 (en) | 2003-12-16 | 2010-06-15 | Panasonic Corporation | Optical semiconductor device and method for fabricating the same |
| JP2017032625A (ja) * | 2015-07-29 | 2017-02-09 | 日亜化学工業株式会社 | 光学部材の製造方法、半導体レーザ装置の製造方法及び半導体レーザ装置 |
| JP2017045795A (ja) * | 2015-08-25 | 2017-03-02 | 日亜化学工業株式会社 | 光学部材の製造方法、半導体レーザ装置の製造方法及び半導体レーザ装置 |
| JP2017069241A (ja) * | 2015-09-28 | 2017-04-06 | 京セラ株式会社 | 半導体レーザ素子用パッケージおよび半導体レーザ装置 |
| JP2018011080A (ja) * | 2017-09-26 | 2018-01-18 | 日亜化学工業株式会社 | 光学部材の製造方法、半導体レーザ装置の製造方法及び半導体レーザ装置 |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3689296B2 (ja) * | 2000-01-24 | 2005-08-31 | パイオニア株式会社 | 光ピックアップ装置 |
| US6693033B2 (en) * | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
| US6392257B1 (en) | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| EP1160776A3 (en) * | 2000-05-31 | 2004-07-14 | Matsushita Electric Industrial Co., Ltd. | Optical pick-up and information recording and reproducing apparatus |
| KR20030011083A (ko) | 2000-05-31 | 2003-02-06 | 모토로라 인코포레이티드 | 반도체 디바이스 및 이를 제조하기 위한 방법 |
| WO2002009187A2 (en) | 2000-07-24 | 2002-01-31 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| JP2002074719A (ja) * | 2000-08-24 | 2002-03-15 | Fujitsu Ltd | 光学装置 |
| WO2002054548A1 (en) * | 2000-12-28 | 2002-07-11 | Matsushita Electric Industrial Co., Ltd. | Shorter wavelength laser module and method of manufacturing the laser module |
| US20020096683A1 (en) | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7092345B2 (en) * | 2001-03-22 | 2006-08-15 | Ricoh Company, Ltd. | Optical module |
| WO2002082551A1 (en) | 2001-04-02 | 2002-10-17 | Motorola, Inc. | A semiconductor structure exhibiting reduced leakage current |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6639249B2 (en) * | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
| US20030026310A1 (en) * | 2001-08-06 | 2003-02-06 | Motorola, Inc. | Structure and method for fabrication for a lighting device |
| US20030034491A1 (en) | 2001-08-14 | 2003-02-20 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US6673667B2 (en) * | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
| US20030071327A1 (en) | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| JPWO2003102938A1 (ja) * | 2002-06-03 | 2005-09-29 | ソニー株式会社 | 2波長光素子 |
| JP3800135B2 (ja) * | 2002-06-18 | 2006-07-26 | セイコーエプソン株式会社 | 光通信モジュール、光通信モジュールの製造方法および電子機器 |
| US7169619B2 (en) * | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6806202B2 (en) | 2002-12-03 | 2004-10-19 | Motorola, Inc. | Method of removing silicon oxide from a surface of a substrate |
| US6963090B2 (en) | 2003-01-09 | 2005-11-08 | Freescale Semiconductor, Inc. | Enhancement mode metal-oxide-semiconductor field effect transistor |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| KR100612838B1 (ko) * | 2004-02-07 | 2006-08-18 | 삼성전자주식회사 | 광학벤치, 이를 사용한 박형광픽업 및 그 제조방법 |
| TWI273586B (en) * | 2004-06-11 | 2007-02-11 | Hon Hai Prec Ind Co Ltd | Optical recording/reproducing system |
| DE102004035494A1 (de) * | 2004-07-22 | 2006-02-09 | Giesecke & Devrient Gmbh | Vorrichtung und Verfahren zur Prüfung von Wertdokumenten |
| US20060092642A1 (en) * | 2004-10-29 | 2006-05-04 | Hideki Nakata | Light emitting module, optical head, and optical disc recording and reproducing apparatus |
| JP2007004900A (ja) * | 2005-06-23 | 2007-01-11 | Matsushita Electric Ind Co Ltd | 光半導体装置及びその製造方法 |
| JP2007058902A (ja) * | 2005-08-22 | 2007-03-08 | Funai Electric Co Ltd | 光ピックアップ |
| US8050167B2 (en) * | 2009-03-04 | 2011-11-01 | Victor Company Of Japan, Limited | Optical device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60140775A (ja) | 1983-12-27 | 1985-07-25 | Nec Corp | 半導体素子用ステム |
| JPS61153360A (ja) | 1984-12-26 | 1986-07-12 | 清水建設株式会社 | 氷蓄熱式岩盤内低温貯蔵庫 |
| JP2892812B2 (ja) | 1990-10-19 | 1999-05-17 | 松下電子工業株式会社 | 半導体レーザ装置 |
| JP2892820B2 (ja) | 1990-11-26 | 1999-05-17 | 松下電子工業株式会社 | 半導体レーザ装置 |
| JP2776487B2 (ja) | 1992-01-28 | 1998-07-16 | シャープ株式会社 | 光学式情報記録再生装置 |
| JPH1166590A (ja) | 1997-08-15 | 1999-03-09 | Toshiba Corp | 光集積ユニット、光ピックアップ装置およびdvdシステム |
| JP3804231B2 (ja) | 1997-11-18 | 2006-08-02 | ソニー株式会社 | 光学ピックアップ |
| US6072579A (en) * | 1998-08-27 | 2000-06-06 | Ricoh Company, Ltd. | Optical pickup apparatus having improved holographic optical element and photodetector |
-
1999
- 1999-09-27 JP JP27338099A patent/JP2001102676A/ja active Pending
-
2000
- 2000-09-26 US US09/670,858 patent/US6496469B1/en not_active Expired - Fee Related
-
2002
- 2002-10-30 US US10/285,025 patent/US6693871B2/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6868055B2 (en) | 2000-07-13 | 2005-03-15 | Sharp Kabushiki Kaisha | Optical pickup |
| US7106682B2 (en) | 2000-07-13 | 2006-09-12 | Sharp Kabushiki Kaisha | Optical pickup |
| US6983005B2 (en) | 2001-01-24 | 2006-01-03 | Sharp Kabushiki Kaisha | Holographic laser and optical pickup |
| US7355933B2 (en) | 2002-08-07 | 2008-04-08 | Sharp Kabushiki Kaisha | Optical pickup device |
| KR100492534B1 (ko) * | 2002-11-29 | 2005-06-02 | 엘지전자 주식회사 | 광 발생기 모듈, 광 검출기 모듈, 그들을 결합한 광픽업장치 및 그들의 제조방법 |
| US6965553B2 (en) | 2002-11-29 | 2005-11-15 | Lg Electronics Inc. | Light emitting module, optical detecting module, optical pickup apparatus and manufacturing methods thereof |
| EP1424690A3 (en) * | 2002-11-29 | 2006-05-24 | Lg Electronics Inc. | Light emitting module, optical detecting module, optical pickup apparatus and manufacturing methods thereof |
| US7362785B2 (en) | 2003-01-10 | 2008-04-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser apparatus and production method thereof |
| US7075960B2 (en) | 2003-01-10 | 2006-07-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser apparatus and production method thereof |
| US7736923B2 (en) | 2003-12-16 | 2010-06-15 | Panasonic Corporation | Optical semiconductor device and method for fabricating the same |
| JP2017032625A (ja) * | 2015-07-29 | 2017-02-09 | 日亜化学工業株式会社 | 光学部材の製造方法、半導体レーザ装置の製造方法及び半導体レーザ装置 |
| US10122147B2 (en) | 2015-07-29 | 2018-11-06 | Nichia Corporation | Method for manufacturing optical member and method for manufacturing semiconductor laser device |
| US10581219B2 (en) | 2015-07-29 | 2020-03-03 | Nichia Corporation | Semiconductor laser device |
| JP2017045795A (ja) * | 2015-08-25 | 2017-03-02 | 日亜化学工業株式会社 | 光学部材の製造方法、半導体レーザ装置の製造方法及び半導体レーザ装置 |
| JP2017069241A (ja) * | 2015-09-28 | 2017-04-06 | 京セラ株式会社 | 半導体レーザ素子用パッケージおよび半導体レーザ装置 |
| JP2018011080A (ja) * | 2017-09-26 | 2018-01-18 | 日亜化学工業株式会社 | 光学部材の製造方法、半導体レーザ装置の製造方法及び半導体レーザ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030063552A1 (en) | 2003-04-03 |
| US6496469B1 (en) | 2002-12-17 |
| US6693871B2 (en) | 2004-02-17 |
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