JP2001089849A5 - - Google Patents

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Publication number
JP2001089849A5
JP2001089849A5 JP1999267136A JP26713699A JP2001089849A5 JP 2001089849 A5 JP2001089849 A5 JP 2001089849A5 JP 1999267136 A JP1999267136 A JP 1999267136A JP 26713699 A JP26713699 A JP 26713699A JP 2001089849 A5 JP2001089849 A5 JP 2001089849A5
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JP
Japan
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ppm
theoretical density
density ratio
metal impurity
content
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JP1999267136A
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English (en)
Japanese (ja)
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JP4240679B2 (ja
JP2001089849A (ja
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Priority to JP26713699A priority Critical patent/JP4240679B2/ja
Priority claimed from JP26713699A external-priority patent/JP4240679B2/ja
Priority to EP00120582A priority patent/EP1087032A1/en
Priority to US09/666,241 priority patent/US6409965B1/en
Priority to KR1020000055414A priority patent/KR100714345B1/ko
Publication of JP2001089849A publication Critical patent/JP2001089849A/ja
Publication of JP2001089849A5 publication Critical patent/JP2001089849A5/ja
Application granted granted Critical
Publication of JP4240679B2 publication Critical patent/JP4240679B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP26713699A 1999-09-21 1999-09-21 スパッタリング用ターゲットの製造方法 Expired - Lifetime JP4240679B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP26713699A JP4240679B2 (ja) 1999-09-21 1999-09-21 スパッタリング用ターゲットの製造方法
EP00120582A EP1087032A1 (en) 1999-09-21 2000-09-20 Sputtering target and its manufacturing method
US09/666,241 US6409965B1 (en) 1999-09-21 2000-09-21 Sputtering target and its manufacturing method
KR1020000055414A KR100714345B1 (ko) 1999-09-21 2000-09-21 스퍼터링 표적 및 그의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26713699A JP4240679B2 (ja) 1999-09-21 1999-09-21 スパッタリング用ターゲットの製造方法

Publications (3)

Publication Number Publication Date
JP2001089849A JP2001089849A (ja) 2001-04-03
JP2001089849A5 true JP2001089849A5 (https=) 2006-04-27
JP4240679B2 JP4240679B2 (ja) 2009-03-18

Family

ID=17440590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26713699A Expired - Lifetime JP4240679B2 (ja) 1999-09-21 1999-09-21 スパッタリング用ターゲットの製造方法

Country Status (4)

Country Link
US (1) US6409965B1 (https=)
EP (1) EP1087032A1 (https=)
JP (1) JP4240679B2 (https=)
KR (1) KR100714345B1 (https=)

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US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US7469558B2 (en) 2001-07-10 2008-12-30 Springworks, Llc As-deposited planar optical waveguides with low scattering loss and methods for their manufacture
WO2003025244A2 (en) * 2001-09-17 2003-03-27 Heraeus, Inc. Refurbishing spent sputtering targets
US7404877B2 (en) 2001-11-09 2008-07-29 Springworks, Llc Low temperature zirconia based thermal barrier layer by PVD
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US7378356B2 (en) * 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
AU2003261463A1 (en) 2002-08-27 2004-03-19 Symmorphix, Inc. Optically coupling into highly uniform waveguides
US6863862B2 (en) * 2002-09-04 2005-03-08 Philip Morris Usa Inc. Methods for modifying oxygen content of atomized intermetallic aluminide powders and for forming articles from the modified powders
US7205662B2 (en) 2003-02-27 2007-04-17 Symmorphix, Inc. Dielectric barrier layer films
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US7504008B2 (en) * 2004-03-12 2009-03-17 Applied Materials, Inc. Refurbishment of sputtering targets
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
KR101127370B1 (ko) 2004-12-08 2012-03-29 인피니트 파워 솔루션스, 인크. ＬｉＣｏＯ２의 증착
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
CN101523571A (zh) 2006-09-29 2009-09-02 无穷动力解决方案股份有限公司 柔性基板上沉积的电池层的掩模和材料限制
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
CN101903560B (zh) 2007-12-21 2014-08-06 无穷动力解决方案股份有限公司 用于电解质膜的溅射靶的方法
US8518581B2 (en) 2008-01-11 2013-08-27 Inifinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
WO2009124191A2 (en) 2008-04-02 2009-10-08 Infinite Power Solutions, Inc. Passive over/under voltage control and protection for energy storage devices associated with energy harvesting
JP2012500610A (ja) 2008-08-11 2012-01-05 インフィニット パワー ソリューションズ， インコーポレイテッド 電磁エネルギー獲得ための統合コレクタ表面を有するエネルギーデバイスおよびその方法
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
CN102150185B (zh) 2008-09-12 2014-05-28 无穷动力解决方案股份有限公司 具有经由电磁能进行数据通信的组成导电表面的能量装置及其方法
WO2010042594A1 (en) 2008-10-08 2010-04-15 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
CN102576828B (zh) 2009-09-01 2016-04-20 萨普拉斯特研究有限责任公司 具有集成薄膜电池的印刷电路板
US8894826B2 (en) * 2009-09-24 2014-11-25 Jesse A. Frantz Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering
EP2577777B1 (en) 2010-06-07 2016-12-28 Sapurast Research LLC Rechargeable, high-density electrochemical device
US8703233B2 (en) 2011-09-29 2014-04-22 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets by cold spray
CN112385006A (zh) * 2018-06-18 2021-02-19 Abb瑞士股份有限公司 用于生产磁粉的方法

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Publication number Priority date Publication date Assignee Title
JPH0768612B2 (ja) * 1987-04-20 1995-07-26 日立金属株式会社 希土類金属―鉄族金属ターゲット用合金粉末、希土類金属―鉄族金属ターゲット、およびそれらの製造方法
JPS63274763A (ja) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd 光磁気記録用合金タ−ゲツト
KR100241407B1 (ko) * 1995-03-08 2000-03-02 다나카 히사노리 광자기 기록 매체용 타겟 및 그의 제조방법
JP3098204B2 (ja) * 1997-03-07 2000-10-16 ティーディーケイ株式会社 光磁気記録用合金ターゲット、その製造方法およびその再生方法
JPH11189866A (ja) * 1997-12-26 1999-07-13 Mitsubishi Materials Corp 希土類を含有する再生ターゲット材とその再生方法
JPH11319752A (ja) * 1998-05-12 1999-11-24 Sumitomo Metal Mining Co Ltd 希土類元素含有物からの有価組成物の回収方法、及びこれにより得られた合金粉末

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