JP2001085303A - 荷電ビーム露光装置及び荷電ビーム露光方法 - Google Patents

荷電ビーム露光装置及び荷電ビーム露光方法

Info

Publication number
JP2001085303A
JP2001085303A JP25728099A JP25728099A JP2001085303A JP 2001085303 A JP2001085303 A JP 2001085303A JP 25728099 A JP25728099 A JP 25728099A JP 25728099 A JP25728099 A JP 25728099A JP 2001085303 A JP2001085303 A JP 2001085303A
Authority
JP
Japan
Prior art keywords
pattern
beam adjustment
exposure
adjustment
parameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25728099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001085303A5 (enExample
Inventor
Tetsuo Nakasugi
哲郎 中杉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP25728099A priority Critical patent/JP2001085303A/ja
Priority to US09/658,506 priority patent/US6507034B1/en
Publication of JP2001085303A publication Critical patent/JP2001085303A/ja
Publication of JP2001085303A5 publication Critical patent/JP2001085303A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP25728099A 1999-09-10 1999-09-10 荷電ビーム露光装置及び荷電ビーム露光方法 Pending JP2001085303A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP25728099A JP2001085303A (ja) 1999-09-10 1999-09-10 荷電ビーム露光装置及び荷電ビーム露光方法
US09/658,506 US6507034B1 (en) 1999-09-10 2000-09-08 Charge beam exposure apparatus, charge beam exposure method, and charge beam exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25728099A JP2001085303A (ja) 1999-09-10 1999-09-10 荷電ビーム露光装置及び荷電ビーム露光方法

Publications (2)

Publication Number Publication Date
JP2001085303A true JP2001085303A (ja) 2001-03-30
JP2001085303A5 JP2001085303A5 (enExample) 2005-08-04

Family

ID=17304192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25728099A Pending JP2001085303A (ja) 1999-09-10 1999-09-10 荷電ビーム露光装置及び荷電ビーム露光方法

Country Status (2)

Country Link
US (1) US6507034B1 (enExample)
JP (1) JP2001085303A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1335249A1 (en) * 2002-02-06 2003-08-13 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006245096A (ja) * 2005-03-01 2006-09-14 Hitachi High-Technologies Corp 電子ビーム描画装置および電子ビーム描画方法
JP2008085120A (ja) * 2006-09-28 2008-04-10 Nuflare Technology Inc 荷電粒子ビーム描画装置の位置補正係数算出方法及び荷電粒子ビーム描画装置の位置補正係数更新方法
US7379153B2 (en) 2002-02-06 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010016170A (ja) * 2008-07-03 2010-01-21 Nuflare Technology Inc 成形ビームのオフセット偏向量取得方法及び描画装置
JP2010192666A (ja) * 2009-02-18 2010-09-02 Nuflare Technology Inc 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置
JP2015032613A (ja) * 2013-07-31 2015-02-16 凸版印刷株式会社 荷電ビーム描画装置用の照射位置補正装置、荷電ビーム照射位置の補正方法、フォトマスクの製造方法及び半導体装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040026634A1 (en) * 2002-08-08 2004-02-12 Takao Utsumi Electron beam proximity exposure apparatus
US6960532B2 (en) * 2003-02-28 2005-11-01 International Business Machines Corporation Suppressing lithography at a wafer edge
US7894174B2 (en) * 2004-08-23 2011-02-22 Monolithic Power Systems, Inc. Method and apparatus for fault detection scheme for cold cathode fluorescent lamp (CCFL) integrated circuits
JP4476773B2 (ja) * 2004-10-28 2010-06-09 株式会社東芝 電子ビーム制御方法および電子ビーム描画装置
JP4789260B2 (ja) * 2006-08-23 2011-10-12 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム装置及びアパーチャの軸調整方法
CN101453818B (zh) * 2007-11-29 2014-03-19 杭州茂力半导体技术有限公司 放电灯的电路保护和调节装置
WO2013048781A2 (en) * 2011-09-28 2013-04-04 Rambus Inc. Laser micromachining optical elements in a substrate
US9552964B2 (en) * 2014-06-20 2017-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating an integrated circuit with a pattern density-outlier-treatment for optimized pattern density uniformity

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918051B2 (ja) 1989-12-18 1999-07-12 富士通株式会社 電子ビーム露光装置
JP2837515B2 (ja) 1990-06-20 1998-12-16 富士通株式会社 電子ビーム露光装置
JP3064375B2 (ja) 1990-10-05 2000-07-12 株式会社日立製作所 電子線描画装置及びその調整法
US5689117A (en) * 1994-11-22 1997-11-18 Nikon Corporation Apparatus for image transfer with charged particle beam, and deflector and mask used with such apparatus
US6225637B1 (en) * 1996-10-25 2001-05-01 Canon Kabushiki Kaisha Electron beam exposure apparatus
KR19980079377A (ko) * 1997-03-25 1998-11-25 요시다쇼이치로 하전립자선 전사장치
US6087052A (en) * 1997-10-01 2000-07-11 Fujitsu Limited Charged particle beam exposure method utilizing subfield proximity corrections
JP2000058431A (ja) * 1998-08-04 2000-02-25 Nikon Corp 荷電粒子線転写用マスク
JP3298539B2 (ja) * 1999-02-18 2002-07-02 日本電気株式会社 電子ビーム露光装置及び電子ビーム露光方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1335249A1 (en) * 2002-02-06 2003-08-13 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379153B2 (en) 2002-02-06 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7390614B2 (en) 2002-02-06 2008-06-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006245096A (ja) * 2005-03-01 2006-09-14 Hitachi High-Technologies Corp 電子ビーム描画装置および電子ビーム描画方法
JP2008085120A (ja) * 2006-09-28 2008-04-10 Nuflare Technology Inc 荷電粒子ビーム描画装置の位置補正係数算出方法及び荷電粒子ビーム描画装置の位置補正係数更新方法
JP2010016170A (ja) * 2008-07-03 2010-01-21 Nuflare Technology Inc 成形ビームのオフセット偏向量取得方法及び描画装置
JP2010192666A (ja) * 2009-02-18 2010-09-02 Nuflare Technology Inc 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置
JP2015032613A (ja) * 2013-07-31 2015-02-16 凸版印刷株式会社 荷電ビーム描画装置用の照射位置補正装置、荷電ビーム照射位置の補正方法、フォトマスクの製造方法及び半導体装置

Also Published As

Publication number Publication date
US6507034B1 (en) 2003-01-14

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