JP2001035832A - ドライエッチング方法 - Google Patents

ドライエッチング方法

Info

Publication number
JP2001035832A
JP2001035832A JP11202953A JP20295399A JP2001035832A JP 2001035832 A JP2001035832 A JP 2001035832A JP 11202953 A JP11202953 A JP 11202953A JP 20295399 A JP20295399 A JP 20295399A JP 2001035832 A JP2001035832 A JP 2001035832A
Authority
JP
Japan
Prior art keywords
gas
etching method
dry etching
plasma
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11202953A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001035832A5 (enExample
Inventor
Hideo Kitagawa
英夫 北川
Nobumasa Suzuki
伸昌 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP11202953A priority Critical patent/JP2001035832A/ja
Publication of JP2001035832A publication Critical patent/JP2001035832A/ja
Publication of JP2001035832A5 publication Critical patent/JP2001035832A5/ja
Pending legal-status Critical Current

Links

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  • Drying Of Semiconductors (AREA)
JP11202953A 1999-07-16 1999-07-16 ドライエッチング方法 Pending JP2001035832A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11202953A JP2001035832A (ja) 1999-07-16 1999-07-16 ドライエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11202953A JP2001035832A (ja) 1999-07-16 1999-07-16 ドライエッチング方法

Publications (2)

Publication Number Publication Date
JP2001035832A true JP2001035832A (ja) 2001-02-09
JP2001035832A5 JP2001035832A5 (enExample) 2006-09-07

Family

ID=16465908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11202953A Pending JP2001035832A (ja) 1999-07-16 1999-07-16 ドライエッチング方法

Country Status (1)

Country Link
JP (1) JP2001035832A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1233449A2 (en) * 2001-02-15 2002-08-21 Interuniversitair Micro-Elektronica Centrum A method of fabricating a semiconductor device
US7482694B2 (en) 2002-04-03 2009-01-27 Nec Coporation Semiconductor device and its manufacturing method
JP2018050055A (ja) * 2011-10-27 2018-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低ｋ及びその他の誘電体膜をエッチングするための処理チャンバ
JP2021077865A (ja) * 2019-11-08 2021-05-20 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
KR20210057061A (ko) * 2019-11-08 2021-05-20 도쿄엘렉트론가부시키가이샤 에칭 방법

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1233449A2 (en) * 2001-02-15 2002-08-21 Interuniversitair Micro-Elektronica Centrum A method of fabricating a semiconductor device
US7482694B2 (en) 2002-04-03 2009-01-27 Nec Coporation Semiconductor device and its manufacturing method
JP2018050055A (ja) * 2011-10-27 2018-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低ｋ及びその他の誘電体膜をエッチングするための処理チャンバ
JP2021077865A (ja) * 2019-11-08 2021-05-20 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
KR20210057061A (ko) * 2019-11-08 2021-05-20 도쿄엘렉트론가부시키가이샤 에칭 방법
KR102401025B1 (ko) 2019-11-08 2022-05-24 도쿄엘렉트론가부시키가이샤 에칭 방법
KR20220082068A (ko) * 2019-11-08 2022-06-16 도쿄엘렉트론가부시키가이샤 에칭 방법
KR102723916B1 (ko) 2019-11-08 2024-10-31 도쿄엘렉트론가부시키가이샤 에칭 방법
JP7599872B2 (ja) 2019-11-08 2024-12-16 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

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