JP2001035832A5 - - Google Patents
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- Publication number
- JP2001035832A5 JP2001035832A5 JP1999202953A JP20295399A JP2001035832A5 JP 2001035832 A5 JP2001035832 A5 JP 2001035832A5 JP 1999202953 A JP1999202953 A JP 1999202953A JP 20295399 A JP20295399 A JP 20295399A JP 2001035832 A5 JP2001035832 A5 JP 2001035832A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- atom
- etching method
- dry etching
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 description 82
- 238000000034 method Methods 0.000 description 26
- 238000001312 dry etching Methods 0.000 description 23
- 125000005843 halogen group Chemical group 0.000 description 14
- 125000004430 oxygen atom Chemical group O* 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 125000004437 phosphorous atom Chemical group 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 229910052717 sulfur Inorganic materials 0.000 description 11
- 125000004434 sulfur atom Chemical group 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 description 6
- 229920000090 poly(aryl ether) Polymers 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 229910052704 radon Inorganic materials 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11202953A JP2001035832A (ja) | 1999-07-16 | 1999-07-16 | ドライエッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11202953A JP2001035832A (ja) | 1999-07-16 | 1999-07-16 | ドライエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001035832A JP2001035832A (ja) | 2001-02-09 |
| JP2001035832A5 true JP2001035832A5 (enExample) | 2006-09-07 |
Family
ID=16465908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11202953A Pending JP2001035832A (ja) | 1999-07-16 | 1999-07-16 | ドライエッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001035832A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6821884B2 (en) * | 2001-02-15 | 2004-11-23 | Interuniversitair Microelektronica Centrum (Imec) | Method of fabricating a semiconductor device |
| US7482694B2 (en) | 2002-04-03 | 2009-01-27 | Nec Coporation | Semiconductor device and its manufacturing method |
| US9666414B2 (en) * | 2011-10-27 | 2017-05-30 | Applied Materials, Inc. | Process chamber for etching low k and other dielectric films |
| WO2021090516A1 (ja) * | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6990799B2 (ja) * | 2019-11-08 | 2022-02-03 | 東京エレクトロン株式会社 | エッチング方法、プラズマ処理装置、処理ガス、デバイスの製造方法、プログラム、及び記憶媒体 |
-
1999
- 1999-07-16 JP JP11202953A patent/JP2001035832A/ja active Pending
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