JP2001035423A5 - - Google Patents
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- Publication number
- JP2001035423A5 JP2001035423A5 JP1999200222A JP20022299A JP2001035423A5 JP 2001035423 A5 JP2001035423 A5 JP 2001035423A5 JP 1999200222 A JP1999200222 A JP 1999200222A JP 20022299 A JP20022299 A JP 20022299A JP 2001035423 A5 JP2001035423 A5 JP 2001035423A5
- Authority
- JP
- Japan
- Prior art keywords
- cold cathode
- field electron
- electron emission
- cathode field
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 description 60
- 230000005684 electric field Effects 0.000 description 54
- 238000000034 method Methods 0.000 description 43
- 239000004020 conductor Substances 0.000 description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 25
- 230000007257 malfunction Effects 0.000 description 23
- 229910000838 Al alloy Inorganic materials 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 21
- 239000011159 matrix material Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20022299A JP4196490B2 (ja) | 1999-05-18 | 1999-07-14 | 冷陰極電界電子放出表示装置用カソード・パネル及び冷陰極電界電子放出表示装置、並びに、冷陰極電界電子放出表示装置用カソード・パネルの製造方法 |
| KR1020000026324A KR100795422B1 (ko) | 1999-05-18 | 2000-05-17 | 냉음극 전계 전자 방출 표시 장치용 캐소드 패널의 제조 방법 |
| US09/572,921 US6917155B1 (en) | 1999-05-18 | 2000-05-17 | Cathode panel for a cold cathode field emission display and cold cathode field emission display, and method of producing cathode panel for a cold cathode field emission display |
| EP20000401357 EP1054427A3 (en) | 1999-05-18 | 2000-05-18 | Cathode panel for a cold cathode field emission diplay and cold cathode field emission display, and method of producing cathode panel for a cold cathode field emission display |
| US11/114,100 US7204739B2 (en) | 1999-05-18 | 2005-04-26 | Cathode panel for a cold cathode field emission display and cold cathode field emission display, and method of producing cathode panel for a cold cathode field emission display |
| KR1020070068696A KR100847854B1 (ko) | 1999-05-18 | 2007-07-09 | 냉음극 전계 전자 방출 표시 장치용 캐소드 패널 및 냉음극전계 전자 방출 표시 장치 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13752199 | 1999-05-18 | ||
| JP11-137521 | 1999-05-18 | ||
| JP20022299A JP4196490B2 (ja) | 1999-05-18 | 1999-07-14 | 冷陰極電界電子放出表示装置用カソード・パネル及び冷陰極電界電子放出表示装置、並びに、冷陰極電界電子放出表示装置用カソード・パネルの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001035423A JP2001035423A (ja) | 2001-02-09 |
| JP2001035423A5 true JP2001035423A5 (enExample) | 2006-04-06 |
| JP4196490B2 JP4196490B2 (ja) | 2008-12-17 |
Family
ID=26470802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20022299A Expired - Fee Related JP4196490B2 (ja) | 1999-05-18 | 1999-07-14 | 冷陰極電界電子放出表示装置用カソード・パネル及び冷陰極電界電子放出表示装置、並びに、冷陰極電界電子放出表示装置用カソード・パネルの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6917155B1 (enExample) |
| EP (1) | EP1054427A3 (enExample) |
| JP (1) | JP4196490B2 (enExample) |
| KR (2) | KR100795422B1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3878365B2 (ja) | 1999-09-09 | 2007-02-07 | 株式会社日立製作所 | 画像表示装置および画像表示装置の製造方法 |
| US7586115B2 (en) * | 2000-12-28 | 2009-09-08 | Epir Technologies, Inc. | Light emission from semiconductor integrated circuits |
| JP2004228084A (ja) * | 2003-01-21 | 2004-08-12 | Samsung Sdi Co Ltd | 電界放出素子 |
| KR100972620B1 (ko) * | 2003-10-21 | 2010-07-27 | 삼성에스디아이 주식회사 | 전계 방출 표시 장치 및 전계 방출 표시 장치의 검사 방법 |
| KR100943192B1 (ko) * | 2003-11-25 | 2010-02-19 | 삼성에스디아이 주식회사 | 전계방출 표시소자 및 그 제조방법 |
| JP4586394B2 (ja) * | 2004-04-02 | 2010-11-24 | ソニー株式会社 | 冷陰極電界電子放出表示装置用のカソードパネルの検査方法、及び、冷陰極電界電子放出表示装置の製造方法 |
| KR20050104550A (ko) * | 2004-04-29 | 2005-11-03 | 삼성에스디아이 주식회사 | 전자 방출 표시장치 |
| JP2005353419A (ja) * | 2004-06-10 | 2005-12-22 | Pioneer Electronic Corp | 表示パネル |
| US7427826B2 (en) * | 2005-01-25 | 2008-09-23 | Canon Kabushiki Kaisha | Electron beam apparatus |
| KR20060092512A (ko) * | 2005-02-18 | 2006-08-23 | 삼성에스디아이 주식회사 | 전자방출소자 및 그 제작 방법과 이를 채용한 전자방출 표시장치 |
| KR20060104657A (ko) | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
| US7404750B2 (en) * | 2005-10-31 | 2008-07-29 | Motorola, Inc. | Method for reducing leakage current in a vacuum field emission display |
| JP2007294126A (ja) * | 2006-04-21 | 2007-11-08 | Canon Inc | 電子放出素子、電子源、画像表示装置、及び、電子放出素子の製造方法 |
| JP5151667B2 (ja) * | 2008-05-12 | 2013-02-27 | パナソニック株式会社 | マトリックス型冷陰極電子源装置 |
| JP5367343B2 (ja) * | 2008-11-11 | 2013-12-11 | ソニー株式会社 | 冷陰極電界電子放出表示装置 |
| TWI445037B (zh) * | 2011-12-30 | 2014-07-11 | Au Optronics Corp | 場發射式顯示器之畫素結構及其修補方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2568394B1 (fr) | 1984-07-27 | 1988-02-12 | Commissariat Energie Atomique | Dispositif de visualisation par cathodoluminescence excitee par emission de champ |
| JPH04284324A (ja) | 1991-03-13 | 1992-10-08 | Seiko Epson Corp | 電界電子放出装置 |
| TW272322B (enExample) * | 1993-09-30 | 1996-03-11 | Futaba Denshi Kogyo Kk | |
| JP3297962B2 (ja) | 1994-04-22 | 2002-07-02 | ソニー株式会社 | アクティブマトリクス表示装置 |
| US5542866A (en) * | 1994-12-27 | 1996-08-06 | Industrial Technology Research Institute | Field emission display provided with repair capability of defects |
| KR970003382A (ko) * | 1995-06-30 | 1997-01-28 | 이우복 | 전계방출 표시 소자의 구동방법 |
| JPH09288963A (ja) | 1996-04-24 | 1997-11-04 | Toshiba Corp | 電界放出型冷陰極アレイ及びこれを用いた画像表示装置 |
| JPH09320455A (ja) | 1996-05-29 | 1997-12-12 | Futaba Corp | 電界放出型カソード |
| KR100228282B1 (ko) * | 1996-09-17 | 1999-11-01 | 윤종용 | 액정 표시 장치 |
| US5929560A (en) * | 1996-10-31 | 1999-07-27 | Motorola, Inc. | Field emission display having an ion shield |
| JP3764906B2 (ja) | 1997-03-11 | 2006-04-12 | 独立行政法人産業技術総合研究所 | 電界放射型カソード |
| JPH10340666A (ja) | 1997-06-09 | 1998-12-22 | Futaba Corp | 電界電子放出素子 |
-
1999
- 1999-07-14 JP JP20022299A patent/JP4196490B2/ja not_active Expired - Fee Related
-
2000
- 2000-05-17 US US09/572,921 patent/US6917155B1/en not_active Expired - Fee Related
- 2000-05-17 KR KR1020000026324A patent/KR100795422B1/ko not_active Expired - Fee Related
- 2000-05-18 EP EP20000401357 patent/EP1054427A3/en not_active Withdrawn
-
2005
- 2005-04-26 US US11/114,100 patent/US7204739B2/en not_active Expired - Fee Related
-
2007
- 2007-07-09 KR KR1020070068696A patent/KR100847854B1/ko not_active Expired - Fee Related
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