JP2001027806A5 - - Google Patents
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- Publication number
- JP2001027806A5 JP2001027806A5 JP1999199097A JP19909799A JP2001027806A5 JP 2001027806 A5 JP2001027806 A5 JP 2001027806A5 JP 1999199097 A JP1999199097 A JP 1999199097A JP 19909799 A JP19909799 A JP 19909799A JP 2001027806 A5 JP2001027806 A5 JP 2001027806A5
- Authority
- JP
- Japan
- Prior art keywords
- resist
- polyfunctional epoxy
- resist composition
- epoxy compound
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M Tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- FAYMLNNRGCYLSR-UHFFFAOYSA-M Triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- BTQFTQPLXGINEN-UHFFFAOYSA-N 3-(cyclohexylmethoxymethyl)-3-ethyloxetane Chemical compound C1CCCCC1COCC1(CC)COC1 BTQFTQPLXGINEN-UHFFFAOYSA-N 0.000 description 1
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical compound C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 description 1
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N Cyclohexene oxide Chemical compound C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 1
- 210000002356 Skeleton Anatomy 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- IDSLNGDJQFVDPQ-UHFFFAOYSA-N bis(7-oxabicyclo[4.1.0]heptan-4-yl) hexanedioate Chemical compound C1CC2OC2CC1OC(=O)CCCCC(=O)OC1CC2OC2CC1 IDSLNGDJQFVDPQ-UHFFFAOYSA-N 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- BVTJGGGYKAMDBN-UHFFFAOYSA-N dioxetane Chemical class C1COO1 BVTJGGGYKAMDBN-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- -1 glycidyl isocyanurate Chemical compound 0.000 description 1
- 125000000686 lactone group Chemical group 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19909799A JP4424632B2 (ja) | 1999-07-13 | 1999-07-13 | 化学増幅型レジスト組成物およびレジストパターン形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19909799A JP4424632B2 (ja) | 1999-07-13 | 1999-07-13 | 化学増幅型レジスト組成物およびレジストパターン形成方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001027806A JP2001027806A (ja) | 2001-01-30 |
JP2001027806A5 true JP2001027806A5 (xx) | 2006-08-31 |
JP4424632B2 JP4424632B2 (ja) | 2010-03-03 |
Family
ID=16402083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19909799A Expired - Fee Related JP4424632B2 (ja) | 1999-07-13 | 1999-07-13 | 化学増幅型レジスト組成物およびレジストパターン形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4424632B2 (xx) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI269118B (en) * | 2001-03-05 | 2006-12-21 | Sumitomo Chemical Co | Chemical amplifying type positive resist composition |
JP2002333608A (ja) * | 2001-05-09 | 2002-11-22 | Toshiba Corp | 液晶表示装置およびその製造方法 |
JP4683763B2 (ja) * | 2001-05-11 | 2011-05-18 | リコー光学株式会社 | 高分子材料層の加熱方法及び装置 |
JP3816784B2 (ja) * | 2001-11-09 | 2006-08-30 | 富士通株式会社 | リソグラフィー方法及び加工方法 |
TW200401164A (en) * | 2002-03-01 | 2004-01-16 | Shipley Co Llc | Photoresist compositions |
JP2004004703A (ja) * | 2002-04-03 | 2004-01-08 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
JP4222850B2 (ja) | 2003-02-10 | 2009-02-12 | Spansion Japan株式会社 | 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法 |
JP4131864B2 (ja) * | 2003-11-25 | 2008-08-13 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性熱硬化性樹脂組成物、硬化物の形成方法、及び機能素子の製造方法 |
JP4717658B2 (ja) * | 2006-02-17 | 2011-07-06 | ソニー株式会社 | パターン形成方法および半導体装置の製造方法 |
DE602007001356D1 (de) | 2006-03-14 | 2009-08-06 | Fujifilm Corp | Positive Resistzusammensetzung und Verfahren zur Strukturformung damit |
US20100068650A1 (en) * | 2007-03-28 | 2010-03-18 | Yukio Nishimura | Positive-working radiation-sensitive composition and method for resist pattern formation using the composition |
-
1999
- 1999-07-13 JP JP19909799A patent/JP4424632B2/ja not_active Expired - Fee Related
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