JP2001007039A5 - - Google Patents

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Publication number
JP2001007039A5
JP2001007039A5 JP1999172704A JP17270499A JP2001007039A5 JP 2001007039 A5 JP2001007039 A5 JP 2001007039A5 JP 1999172704 A JP1999172704 A JP 1999172704A JP 17270499 A JP17270499 A JP 17270499A JP 2001007039 A5 JP2001007039 A5 JP 2001007039A5
Authority
JP
Japan
Prior art keywords
wafer
light
shielding plate
main surface
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999172704A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001007039A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11172704A priority Critical patent/JP2001007039A/ja
Priority claimed from JP11172704A external-priority patent/JP2001007039A/ja
Priority to US09/588,082 priority patent/US6403475B1/en
Priority to KR1020000033465A priority patent/KR20010021004A/ko
Publication of JP2001007039A publication Critical patent/JP2001007039A/ja
Publication of JP2001007039A5 publication Critical patent/JP2001007039A5/ja
Pending legal-status Critical Current

Links

JP11172704A 1999-06-18 1999-06-18 半導体集積回路装置の製造方法 Pending JP2001007039A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11172704A JP2001007039A (ja) 1999-06-18 1999-06-18 半導体集積回路装置の製造方法
US09/588,082 US6403475B1 (en) 1999-06-18 2000-06-06 Fabrication method for semiconductor integrated device
KR1020000033465A KR20010021004A (ko) 1999-06-18 2000-06-17 반도체 집적 회로 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11172704A JP2001007039A (ja) 1999-06-18 1999-06-18 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2001007039A JP2001007039A (ja) 2001-01-12
JP2001007039A5 true JP2001007039A5 (https=) 2004-10-14

Family

ID=15946807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11172704A Pending JP2001007039A (ja) 1999-06-18 1999-06-18 半導体集積回路装置の製造方法

Country Status (3)

Country Link
US (1) US6403475B1 (https=)
JP (1) JP2001007039A (https=)
KR (1) KR20010021004A (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10101548C1 (de) * 2001-01-15 2002-05-29 Infineon Technologies Ag Reaktionskammer zur Bearbeitung einer Substratscheibe und Verfahren zum Betrieb derselben
JP4340729B2 (ja) * 2002-06-10 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体装置とその製造方法
US6791668B2 (en) 2002-08-13 2004-09-14 Winbond Electronics Corporation Semiconductor manufacturing apparatus and method
JP2005072205A (ja) * 2003-08-22 2005-03-17 Seiko Epson Corp 熱処理方法、配線パターンの形成方法、電気光学装置の製造方法、電気光学装置及び電子機器
JP4712371B2 (ja) * 2004-12-24 2011-06-29 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100648634B1 (ko) * 2005-01-21 2006-11-23 삼성전자주식회사 반도체 장치의 제조 방법
JP2006245558A (ja) * 2005-02-04 2006-09-14 Advanced Lcd Technologies Development Center Co Ltd 銅配線層、銅配線層の形成方法、半導体装置、及び半導体装置の製造方法
US20060178007A1 (en) * 2005-02-04 2006-08-10 Hiroki Nakamura Method of forming copper wiring layer
JP4103010B2 (ja) * 2005-04-01 2008-06-18 セイコーエプソン株式会社 半導体ウエハ
US20070202677A1 (en) * 2006-02-27 2007-08-30 Micron Technology, Inc. Contact formation
US7965375B2 (en) * 2007-07-03 2011-06-21 Qimoda Ag Lithography mask, rewritable mask, process for manufacturing a mask, device for processing a substrate, lithographic system and a semiconductor device
TW201023328A (en) * 2008-12-04 2010-06-16 Univ Ibaraki Semiconductor integrated circuit device and method for producing the same
JP2011187491A (ja) * 2010-03-04 2011-09-22 Toshiba Corp 半導体装置および半導体装置の製造方法
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
CN106229264B (zh) * 2011-02-21 2019-10-25 应用材料公司 在激光处理系统中的周围层气流分布

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
JPS5932131A (ja) * 1982-08-18 1984-02-21 Nippon Kogaku Kk <Nikon> Ｘ線露光転写法および転写用マスク
JPS6294925A (ja) 1985-10-21 1987-05-01 Nec Corp 熱処理装置
JPH0789569B2 (ja) * 1986-03-26 1995-09-27 株式会社日立製作所 半導体集積回路装置及びその製造方法
JPS62250633A (ja) 1986-04-24 1987-10-31 Nec Corp ハロゲンランプアニ−ル装置
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
JPH01110726A (ja) 1987-10-23 1989-04-27 Fujitsu Ltd ランプアニール方法
JPH01117319A (ja) 1987-10-30 1989-05-10 Nec Corp 半導体装置の製造方法
US5011794A (en) 1989-05-01 1991-04-30 At&T Bell Laboratories Procedure for rapid thermal annealing of implanted semiconductors
JP2515883B2 (ja) 1989-06-02 1996-07-10 山形日本電気株式会社 半導体装置製造用ランプアニ―ル装置
JPH05291170A (ja) 1992-04-08 1993-11-05 Hitachi Ltd 半導体製造装置
JPH06232138A (ja) 1993-02-03 1994-08-19 Mitsubishi Electric Corp 加熱アニール装置
US5838908A (en) * 1994-11-14 1998-11-17 Texas Instruments Incorporated Device for having processors each having interface for transferring delivery units specifying direction and distance and operable to emulate plurality of field programmable gate arrays
US5626680A (en) * 1995-03-03 1997-05-06 Silicon Valley Group, Inc. Thermal processing apparatus and process
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
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JPH0943858A (ja) * 1995-07-28 1997-02-14 Sony Corp 露光装置
JPH09237789A (ja) * 1996-02-29 1997-09-09 Toshiba Corp 遮蔽体および熱処理装置および熱処理方法
JP2976899B2 (ja) * 1996-09-04 1999-11-10 日本電気株式会社 真空成膜方法および装置
KR100302424B1 (ko) * 1996-10-14 2001-09-28 니시무로 타이죠 논리하이브리드메모리용반도체메모리
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
JPH10321547A (ja) 1997-05-22 1998-12-04 Kokusai Electric Co Ltd 熱処理装置
US6030509A (en) * 1998-04-06 2000-02-29 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for shielding a wafer holder

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