JP2000515329A - 強誘電体層を有する層構造体、および層構造体の製造方法 - Google Patents
強誘電体層を有する層構造体、および層構造体の製造方法Info
- Publication number
- JP2000515329A JP2000515329A JP10508367A JP50836798A JP2000515329A JP 2000515329 A JP2000515329 A JP 2000515329A JP 10508367 A JP10508367 A JP 10508367A JP 50836798 A JP50836798 A JP 50836798A JP 2000515329 A JP2000515329 A JP 2000515329A
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- JP
- Japan
- Prior art keywords
- layer
- ferroelectric
- substrate
- platinum
- layer structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulating Bodies (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 少なくとも基板(S)と、白金層(PS)と、白金層(PS)上に形成さ れた強誘電体層(FS)とを有しており、 前記基板(S)と白金層(PS)との間にアモルファスAl2O3の中間層( ZS)が形成されている、 ことを特徴とする層構造体。 2. 基板(S)の表面(OS)は二酸化ケイ素を含む、請求項1記載の層構造 体。 3. 基板(S)は二酸化ケイ素から成る表面層(OS)を有する単結晶シリコ ンを含む、請求項1または2記載の層構造体。 4. 中間層(ZS)は10nmから約1000nmまでの厚さである、請求項 1から3までのいずれか1項記載の層構造体。 5. 強誘電体層(FS)はPb(Zr,Ti)O3系の材料から選択されてい る、請求項1から4までのいずれか1項記載の層構造体。 6. 基板(S)と、白金層(PS)と、白金層(PS)上に形成された強誘電 体層(FS)とを有する層構造体の製造方法において、 基板と白金層の間に薄膜プロセスを用いてAl2O3から成る中間層(ZS) を堆積させる、 ことを特徴とする層構造体の製造方法。 7. 基板温度100℃から300℃で中間層(ZS)を堆積させる、請求項6 記載の方法。 8. 少なくとも基板温度450℃で酸素を含むプラズマにより強誘電体層(F S)を堆積させる、請求項6または7記載の方法。 9. 基板温度100℃から300℃で白金層(PS)を堆積させる、請求項6 から8までのいずれか1項記載の方法。 10. 強誘電体の薄膜素子例えばパイロ検出器、キャパシタおよびメモリを製 造するための、請求項1から9までのいずれか1項の方法の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19630110A DE19630110C2 (de) | 1996-07-25 | 1996-07-25 | Schichtaufbau mit einer ferroelektrischen Schicht und Herstellverfahren |
DE19630110.6 | 1996-07-25 | ||
PCT/DE1997/001396 WO1998005062A1 (de) | 1996-07-25 | 1997-07-02 | Schichtaufbau mit einer ferroelektrischen schicht und herstellverfahren |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011044725A Division JP2011155271A (ja) | 1996-07-25 | 2011-03-02 | 強誘電体層を有する層構造体、および、層構造体の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000515329A true JP2000515329A (ja) | 2000-11-14 |
JP4746161B2 JP4746161B2 (ja) | 2011-08-10 |
JP4746161B6 JP4746161B6 (ja) | 2011-10-26 |
Family
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004045411A (ja) * | 2002-07-02 | 2004-02-12 | Agilent Technol Inc | 半導体コンデンサ内の強誘電性材料と貴金属電極との試験方法 |
JP2004281742A (ja) * | 2003-03-17 | 2004-10-07 | Japan Science & Technology Agency | 半導体素子、半導体センサーおよび半導体記憶素子 |
JP2013201198A (ja) * | 2012-03-23 | 2013-10-03 | Ricoh Co Ltd | 電気機械変換素子及びその製造方法、圧電型アクチュエータ、液滴吐出ヘッド、インクジェット記録装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0714993A (ja) * | 1993-06-18 | 1995-01-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0714993A (ja) * | 1993-06-18 | 1995-01-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004045411A (ja) * | 2002-07-02 | 2004-02-12 | Agilent Technol Inc | 半導体コンデンサ内の強誘電性材料と貴金属電極との試験方法 |
JP4607435B2 (ja) * | 2002-07-02 | 2011-01-05 | アバゴ・テクノロジーズ・ジェネラル・アイピー(シンガポール)プライベート・リミテッド | 半導体コンデンサ内の強誘電性材料と貴金属電極との試験方法 |
JP2004281742A (ja) * | 2003-03-17 | 2004-10-07 | Japan Science & Technology Agency | 半導体素子、半導体センサーおよび半導体記憶素子 |
JP2013201198A (ja) * | 2012-03-23 | 2013-10-03 | Ricoh Co Ltd | 電気機械変換素子及びその製造方法、圧電型アクチュエータ、液滴吐出ヘッド、インクジェット記録装置 |
Also Published As
Publication number | Publication date |
---|---|
EP0914677B1 (de) | 2002-11-13 |
US6139971A (en) | 2000-10-31 |
JP2011155271A (ja) | 2011-08-11 |
WO1998005062A1 (de) | 1998-02-05 |
JP4746161B2 (ja) | 2011-08-10 |
EP0914677A1 (de) | 1999-05-12 |
DE19630110C2 (de) | 1998-11-19 |
DE59708725D1 (de) | 2002-12-19 |
TW362225B (en) | 1999-06-21 |
DE19630110A1 (de) | 1998-01-29 |
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