JP2000511001A - カプセル化されないマイクロ回路用のはんだ合金又は錫接触バンプ構造と同時にそれを製造するための手順 - Google Patents
カプセル化されないマイクロ回路用のはんだ合金又は錫接触バンプ構造と同時にそれを製造するための手順Info
- Publication number
- JP2000511001A JP2000511001A JP09541692A JP54169297A JP2000511001A JP 2000511001 A JP2000511001 A JP 2000511001A JP 09541692 A JP09541692 A JP 09541692A JP 54169297 A JP54169297 A JP 54169297A JP 2000511001 A JP2000511001 A JP 2000511001A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- solder
- contact
- tin
- tiw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 47
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910045601 alloy Inorganic materials 0.000 title claims description 5
- 239000000956 alloy Substances 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract 6
- 229910052786 argon Inorganic materials 0.000 claims abstract 3
- 239000010409 thin film Substances 0.000 claims description 16
- 238000005137 deposition process Methods 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 25
- 239000010931 gold Substances 0.000 abstract description 23
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052737 gold Inorganic materials 0.000 abstract description 14
- 229910052759 nickel Inorganic materials 0.000 abstract description 11
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 48
- 235000012431 wafers Nutrition 0.000 description 13
- 238000000151 deposition Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000005272 metallurgy Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- QGVYLCICHZYPJA-UHFFFAOYSA-N [Cr].[Cu].[Au] Chemical group [Cr].[Cu].[Au] QGVYLCICHZYPJA-UHFFFAOYSA-N 0.000 description 1
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.カプセル化されないマイクロ回路(15)用のはんだ又は錫接触パンプ構造で あって、 - 基板(1)、 - 前記の基板(1)上に形成されたアルミニウムの接触パッド範囲(3)、 - 前記の接触パッド範囲(3)上に形成された複合金属構造で、その構造は TiW薄膜層(7)、そのTiW層の上部上に形成されたAu薄膜層(4)、及び 前記Au層(4)上に形成されたNi層(5)を具えている複合金属層、及び - 前記の複合金属構造(7、4、5)上に形成されたはんだ接触バンプ(6 ) を具えている接触パンプ構造において、 - 前記TiW層(7)が層にするのと関連して窒素とアルゴンとの存在におい てスパッタされ、その後それが酸素処理され、且つ - Au層(4)が一つの堆積過程のみにおいて形成される、 ことを特徴とするはんだ又は錫接触パンプ構造。 2.請求項1記載のはんだ又は錫接触バンプ構造において、前記のTiW層(7) が約100〜350nm、好適には約140nmの厚さを典型的に有することを特徴とす るはんだ又は錫接触パンプ構造。 3.請求項1記載のはんだ又は錫接触バンプ構造において、前記のAu層(4)が 約100〜200nm、好適には約120nmの厚さを典型的に有することを特徴とする はんだ又は錫接触パンプ構造。 4.請求項1記載のはんだ又は錫接触バンプ構造において、前記のNi層(5)が 約0.5〜5μm、好適には約1〜2μmの厚さを典型的に有することを特徴と するはんだ又は錫接触パンプ構造。 5.請求項1記載のはんだ又は錫接触バンプ構造において、前記のTiW層(7) が酸素と窒素との存在においてスパッタされた薄膜であることを特徴とするは んだ又は錫接触パンプ構造。 6.請求項1記載のはんだ又は錫接触バンプ構造において、複合金属構造(7、 4、5)の高さ比率が1:1:20(TiW:Au:Ni)であることを特徴とするはん だ又は錫接触パンプ構造。 7.請求項1記載のはんだ又は錫接触バンプ構造において、錫バンプ(6)の高 さが約10〜60μmであることを特徴とするはんだ又は錫接触パンプ構造。 8.請求項1記載のはんだ又は錫接触バンプ構造において、はんだバンプ(6) の高さが約20〜30μmであることを特徴とするはんだ又は錫接触パンプ構造。 9.請求項1記載のはんだ又は錫接触バンプ構造において、TiW層の合金比率が 10/90であることを特徴とするはんだ又は錫接触パンプ構造。 10.基板(15)と前記基板上に形成されたアルミニウムの接触パッド範囲(3 ) とを具えているカプセル化されないマイクロ回路(15)用のはんだ接触バンプ 構造を製造する方法であって、それにより、 - TiW薄膜層(7)が接触パッド範囲(3)上に堆積され、Au薄膜層(4) がその上に堆積され且つNi層(5)が前記Au層(4)上に堆積され、且つ - はんだ接触パンプが前記複合金属構造(7、4、5)上に形成される、 はんだ接触バンプ構造を製造する方法において、 - 前記TiW層(7)が層にするのと関連して窒素とアルゴンの存在において スパッタされその後それが酸素処理され、 - 前記Au層(4)が一つの堆積過程のみによって形成される、 ことを特徴とするはんだ接触バンプ構造を製造する方法。 11.請求項10記載の方法において、前記TiW層(7)が約100〜200nm、好 適には約140nmの厚さを有するように形成されることを特徴とするはんだ接触 バンプ構造を製造する方法。 12.請求項10記載の方法において、前記Au層(4)が100〜200nm、好適に は約120nmの厚さを有するように典型的に形成されることを特徴とするはんだ 接触バンプ構造を製造する方法。 13.請求項10記載の方法において、前記Ni層(5)が約2〜4μmの厚さを 有するように典型的に形成されることを特徴とするはんだ接触バンプ構造を製 造する方法。 14.請求項10記載の方法において、前記複合金属構造(7、4、5)の高さ 比率が1:1:20(TiW:Au:Ni)になるように選択されることを特徴とするは んだ接触バンプ構造を製造する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI962277 | 1996-05-31 | ||
FI962277A FI962277A0 (fi) | 1996-05-31 | 1996-05-31 | Loed- eller tennknoelstruktur foer oinkapslade mikrokretsar |
PCT/FI1997/000331 WO1997045871A1 (en) | 1996-05-31 | 1997-05-30 | Solder alloy or tin contact bump structure for unencapsulated microcircuits as well as a process for the production thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000511001A true JP2000511001A (ja) | 2000-08-22 |
JP2000511001A5 JP2000511001A5 (ja) | 2004-10-14 |
Family
ID=8546126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP09541692A Ceased JP2000511001A (ja) | 1996-05-31 | 1997-05-30 | カプセル化されないマイクロ回路用のはんだ合金又は錫接触バンプ構造と同時にそれを製造するための手順 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0958606A1 (ja) |
JP (1) | JP2000511001A (ja) |
AU (1) | AU2964297A (ja) |
FI (1) | FI962277A0 (ja) |
WO (1) | WO1997045871A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2799578B1 (fr) * | 1999-10-08 | 2003-07-18 | St Microelectronics Sa | Procede de realisation de connexions electriques sur un boitier semi-conducteur et boitier semi-conducteur |
US6413851B1 (en) * | 2001-06-12 | 2002-07-02 | Advanced Interconnect Technology, Ltd. | Method of fabrication of barrier cap for under bump metal |
TWI225899B (en) * | 2003-02-18 | 2005-01-01 | Unitive Semiconductor Taiwan C | Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4782380A (en) * | 1987-01-22 | 1988-11-01 | Advanced Micro Devices, Inc. | Multilayer interconnection for integrated circuit structure having two or more conductive metal layers |
US4880708A (en) * | 1988-07-05 | 1989-11-14 | Motorola, Inc. | Metallization scheme providing adhesion and barrier properties |
JPH07321114A (ja) * | 1994-05-23 | 1995-12-08 | Sharp Corp | 半導体装置のハンダバンプ形成の方法および構造 |
US5587336A (en) * | 1994-12-09 | 1996-12-24 | Vlsi Technology | Bump formation on yielded semiconductor dies |
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1996
- 1996-05-31 FI FI962277A patent/FI962277A0/fi not_active Application Discontinuation
-
1997
- 1997-05-30 EP EP97924046A patent/EP0958606A1/en not_active Withdrawn
- 1997-05-30 AU AU29642/97A patent/AU2964297A/en not_active Abandoned
- 1997-05-30 WO PCT/FI1997/000331 patent/WO1997045871A1/en not_active Application Discontinuation
- 1997-05-30 JP JP09541692A patent/JP2000511001A/ja not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
AU2964297A (en) | 1998-01-05 |
EP0958606A1 (en) | 1999-11-24 |
FI962277A0 (fi) | 1996-05-31 |
WO1997045871A1 (en) | 1997-12-04 |
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