JP2000501201A5 - - Google Patents

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Publication number
JP2000501201A5
JP2000501201A5 JP1997520570A JP52057097A JP2000501201A5 JP 2000501201 A5 JP2000501201 A5 JP 2000501201A5 JP 1997520570 A JP1997520570 A JP 1997520570A JP 52057097 A JP52057097 A JP 52057097A JP 2000501201 A5 JP2000501201 A5 JP 2000501201A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997520570A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000501201A (ja
JP3805373B2 (ja
Filing date
Publication date
Priority claimed from US08/562,867 external-priority patent/US5962183A/en
Application filed filed Critical
Publication of JP2000501201A publication Critical patent/JP2000501201A/ja
Publication of JP2000501201A5 publication Critical patent/JP2000501201A5/ja
Application granted granted Critical
Publication of JP3805373B2 publication Critical patent/JP3805373B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP52057097A 1995-11-27 1996-11-21 キレート形成性イオン交換樹脂によってフォトレジスト組成物中の金属イオンを低減させる方法 Expired - Fee Related JP3805373B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/562,867 1995-11-27
US08/562,867 US5962183A (en) 1995-11-27 1995-11-27 Metal ion reduction in photoresist compositions by chelating ion exchange resin
PCT/US1996/018784 WO1997019969A1 (en) 1995-11-27 1996-11-21 Metal ion reduction in photoresist compositions by chelating ion exchange resin

Publications (3)

Publication Number Publication Date
JP2000501201A JP2000501201A (ja) 2000-02-02
JP2000501201A5 true JP2000501201A5 (enExample) 2004-09-16
JP3805373B2 JP3805373B2 (ja) 2006-08-02

Family

ID=24248131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52057097A Expired - Fee Related JP3805373B2 (ja) 1995-11-27 1996-11-21 キレート形成性イオン交換樹脂によってフォトレジスト組成物中の金属イオンを低減させる方法

Country Status (8)

Country Link
US (1) US5962183A (enExample)
EP (1) EP0863925B1 (enExample)
JP (1) JP3805373B2 (enExample)
KR (1) KR100412530B1 (enExample)
CN (1) CN1097601C (enExample)
DE (1) DE69611837T2 (enExample)
TW (1) TW442709B (enExample)
WO (1) WO1997019969A1 (enExample)

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US5830990A (en) * 1992-07-10 1998-11-03 Clariant Finance (Bvi) Limited Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US6576139B1 (en) * 1996-07-30 2003-06-10 Kenneth C. Hou Process for purifying photoresist composition employing a filter sheet
US6379551B1 (en) * 1997-08-18 2002-04-30 Pall Corporation Method of removing metal ions using an ion exchange membrane
TW536666B (en) * 1998-02-02 2003-06-11 Clariant Int Ltd Process for producing a photoresist composition having a reduced tendency to produce particles
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
US6217667B1 (en) * 1999-09-24 2001-04-17 Semitool, Inc. Method for cleaning copper surfaces
US6221568B1 (en) * 1999-10-20 2001-04-24 International Business Machines Corporation Developers for polychloroacrylate and polychloromethacrylate based resists
KR100422941B1 (ko) * 2001-01-04 2004-03-12 주식회사 엘지화학 고분자 용액 내 잔류 금속 화합물의 제거 방법
US6610465B2 (en) * 2001-04-11 2003-08-26 Clariant Finance (Bvi) Limited Process for producing film forming resins for photoresist compositions
US20040206702A1 (en) * 2002-08-08 2004-10-21 Davidson James M. Use of an oxidizer to improve trace metals removal from photoresist and photoresist components
CN101247880A (zh) * 2005-08-26 2008-08-20 安格斯公司 含有交换树脂的多孔膜
JP5172118B2 (ja) * 2006-08-04 2013-03-27 三菱レイヨン株式会社 重合体湿粉、重合体湿粉の製造方法、重合体の製造方法およびレジスト組成物の製造方法
JP5556046B2 (ja) * 2009-03-31 2014-07-23 栗田工業株式会社 粗イオン交換樹脂の精製用の処理液
WO2018044703A1 (en) * 2016-08-30 2018-03-08 Rohm And Haas Company Low-sodium resin
CN109426070A (zh) * 2017-08-25 2019-03-05 京东方科技集团股份有限公司 光刻胶组合物、金属图案以及阵列基板的制备方法
JP7137318B2 (ja) * 2018-02-22 2022-09-14 オルガノ株式会社 被処理液の精製方法
KR20200122354A (ko) * 2018-03-26 2020-10-27 후지필름 가부시키가이샤 감광성 수지 조성물과 그 제조 방법, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
CN113198549B (zh) * 2021-04-26 2023-01-31 宁波南大光电材料有限公司 一种去除光刻胶树脂中的金属杂质的方法
US12180328B2 (en) 2021-05-04 2024-12-31 Sachem, Inc. Strong binding metal-chelating resins
US12331155B2 (en) 2021-05-04 2025-06-17 Sachem, Inc. Strong binding metal-chelating resins using macrocycle molecules

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US4033910A (en) * 1975-09-26 1977-07-05 Union Carbide Corporation Methyl formate as an adjuvant in phenolic foam formation
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US4784937A (en) * 1985-08-06 1988-11-15 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant
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US5286606A (en) * 1992-12-29 1994-02-15 Hoechst Celanese Corporation Process for producing a developer having a low metal ion level
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US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
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US5525315A (en) * 1993-12-07 1996-06-11 Shipley Company, L.L.C. Process for removing heavy metal ions with a chelating cation exchange resin
US5500127A (en) * 1994-03-14 1996-03-19 Rohm And Haas Company Purification process
IT1268313B1 (it) * 1994-07-28 1997-02-27 Orthofix Srl Attrezzatura meccanica per il centraggio di fori ciechi per viti ossee di chiodi intramidollari
WO1996012214A1 (en) * 1994-10-12 1996-04-25 Hoechst Celanese Corporation Low metal ion photoactive compounds and photoresists compositions produced therefrom
US5521052A (en) * 1994-12-30 1996-05-28 Hoechst Celanese Corporation Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
US5614352A (en) * 1994-12-30 1997-03-25 Hoechst Celanese Corporation Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5656413A (en) * 1995-09-28 1997-08-12 Hoechst Celanese Corporation Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom

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