JP2000322314A5 - - Google Patents

Download PDF

Info

Publication number
JP2000322314A5
JP2000322314A5 JP1999131336A JP13133699A JP2000322314A5 JP 2000322314 A5 JP2000322314 A5 JP 2000322314A5 JP 1999131336 A JP1999131336 A JP 1999131336A JP 13133699 A JP13133699 A JP 13133699A JP 2000322314 A5 JP2000322314 A5 JP 2000322314A5
Authority
JP
Japan
Prior art keywords
flash memory
built
data bus
flash
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999131336A
Other languages
English (en)
Japanese (ja)
Other versions
JP4164192B2 (ja
JP2000322314A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP13133699A priority Critical patent/JP4164192B2/ja
Priority claimed from JP13133699A external-priority patent/JP4164192B2/ja
Priority to US09/433,713 priority patent/US6125061A/en
Publication of JP2000322314A publication Critical patent/JP2000322314A/ja
Publication of JP2000322314A5 publication Critical patent/JP2000322314A5/ja
Application granted granted Critical
Publication of JP4164192B2 publication Critical patent/JP4164192B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP13133699A 1999-05-12 1999-05-12 半導体装置を搭載する記憶装置 Expired - Fee Related JP4164192B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP13133699A JP4164192B2 (ja) 1999-05-12 1999-05-12 半導体装置を搭載する記憶装置
US09/433,713 US6125061A (en) 1999-05-12 1999-11-04 Semiconductor devices with built-in flash memory capable of easily increasing memory capacity by interconnecting them, and storage device provided with semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13133699A JP4164192B2 (ja) 1999-05-12 1999-05-12 半導体装置を搭載する記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008172421A Division JP2009015850A (ja) 2008-07-01 2008-07-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2000322314A JP2000322314A (ja) 2000-11-24
JP2000322314A5 true JP2000322314A5 (enExample) 2005-11-04
JP4164192B2 JP4164192B2 (ja) 2008-10-08

Family

ID=15055570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13133699A Expired - Fee Related JP4164192B2 (ja) 1999-05-12 1999-05-12 半導体装置を搭載する記憶装置

Country Status (2)

Country Link
US (1) US6125061A (enExample)
JP (1) JP4164192B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070233955A1 (en) * 2000-01-06 2007-10-04 Super Talent Electronics Inc. Mixed-Mode ROM/RAM Booting Using an Integrated Flash Controller with NAND-Flash, RAM, and SD Interfaces
US20080256352A1 (en) * 2000-01-06 2008-10-16 Super Talent Electronics, Inc. Methods and systems of booting of an intelligent non-volatile memory microcontroller from various sources
JP3989665B2 (ja) * 2000-03-03 2007-10-10 株式会社リコー 光情報記録媒体
JP3955712B2 (ja) * 2000-03-03 2007-08-08 株式会社ルネサステクノロジ 半導体装置
JP2001306393A (ja) * 2000-04-20 2001-11-02 Mitsubishi Electric Corp 記憶装置
WO2003017517A1 (en) * 2001-08-20 2003-02-27 Samsung Electronics Co., Ltd Apparatus and method for interfacing between modem and memory in mobile station
US6778436B2 (en) * 2001-10-10 2004-08-17 Fong Piau Apparatus and architecture for a compact flash memory controller
US7209252B2 (en) * 2002-01-15 2007-04-24 Lexmark International, Inc. Memory module, printer assembly, and method for storing printer code
JP4178879B2 (ja) * 2002-08-29 2008-11-12 沖電気工業株式会社 半導体記憶装置
KR100487539B1 (ko) * 2002-09-02 2005-05-03 삼성전자주식회사 직렬 에이티에이 케이블과 연결되는 불휘발성 반도체메모리 장치
KR100506062B1 (ko) * 2002-12-18 2005-08-05 주식회사 하이닉스반도체 복합형 메모리 장치
JP5010263B2 (ja) * 2006-12-12 2012-08-29 株式会社東芝 不揮発性半導体記憶装置
US8234667B2 (en) 2008-01-04 2012-07-31 International Business Machines Corporation Disk with embedded flash memory and disc drive
WO2011085131A2 (en) * 2010-01-06 2011-07-14 Ching-Hsiang Simon Huang Expandable capacity solid state drive

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603776A (ja) * 1983-06-22 1985-01-10 Matsushita Electric Ind Co Ltd １チツプマイクロコンピユ−タ
JPH01226066A (ja) * 1988-03-04 1989-09-08 Hitachi Ltd ディジタル信号処理プロセッサ
JPH1083384A (ja) * 1996-09-06 1998-03-31 Matsushita Electron Corp マイクロコンピュータ
US6034891A (en) * 1997-12-01 2000-03-07 Micron Technology, Inc. Multi-state flash memory defect management

Similar Documents

Publication Publication Date Title
JP2000322314A5 (enExample)
FR2770328B1 (fr) Point memoire remanent
JPH10283275A5 (enExample)
BR0015190A (pt) Dispositivo de armazenamento de dados portátil
ATE313829T1 (de) Rekonfigurierbare logik für einen rechner
WO2002001365A3 (en) Non-volatile cache
DE69937259D1 (de) Nichtflüchtiges Speicherregister
WO2003083662A3 (en) Memory system with burst length shorter than prefetch length
KR960012025A (ko) 불휘발성 반도체 기억 장치와 그 과잉 기록 구제 방법
JP2000076133A5 (enExample)
DE60042640D1 (de) Datenprozessor mit cachespeicher
EP0662663A3 (en) Semiconductor memory having an embedded cache memory.
JP2001142789A5 (enExample)
JP2003203044A5 (enExample)
JPH10207771A5 (enExample)
WO2005041055A3 (en) Echo clock on memory system having wait information
TW344896B (en) Semiconductor memory device
TW332341B (en) The microprocessor
KR900014989A (ko) 기억부(memoryunit)에 사용되는 부분기입 제어회로.
JPH116867A5 (enExample)
DE10196002T1 (de) Synchroner Flashspeicher mit simultanem Schreib-und Lesebetrieb
FR2784219B1 (fr) Architecture de circuit memoire
JP2000076885A5 (enExample)
JPS55105760A (en) Memory control unit
AU2001265354A1 (en) Power saving on the fly during reading of data from a memory device