JP2000290470A - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor deviceInfo
- Publication number
- JP2000290470A JP2000290470A JP11097894A JP9789499A JP2000290470A JP 2000290470 A JP2000290470 A JP 2000290470A JP 11097894 A JP11097894 A JP 11097894A JP 9789499 A JP9789499 A JP 9789499A JP 2000290470 A JP2000290470 A JP 2000290470A
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- Japan
- Prior art keywords
- epoxy resin
- resin composition
- weight
- semiconductor
- crystallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、耐半田クラック
性、高温保管性及び耐燃性に優れた半導体封止用エポキ
シ樹脂組成物及びこれを用いた半導体装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent solder crack resistance, high-temperature storage properties and flame resistance, and a semiconductor device using the same.
【０００２】[0002]
【従来の技術】近年の電子機器の小型化、軽量化、高性
能化の市場動向において、半導体の高集積化が年々進
み、又、半導体装置の表面実装化が促進される中で、半
導体封止材料への要求は益々厳しいものとなってきてい
る。更に環境対応の点からＵＬ−９４でのＶ−０レベル
での耐燃性、及び高温保管性等を満足させる樹脂組成物
の要求がでている。従来から難燃剤としてハロゲン系化
合物である臭素化合物と酸化アンチモンを配合すること
で、高温時に臭素化アンチモンを発生させ難燃化を図っ
てきた。しかし、この手法は電子部品が高温にさらされ
ている間に臭素又は臭素化アンチモンによるアルミニウ
ム配線の腐食や半導体素子のアルミパッドと金線の結合
部の切断等の問題が発生することがある。これらの問題
を解決するために赤燐系難燃剤を用いて、高温保管性を
向上させる技術も提案されているが、赤燐系難燃剤に起
因する耐湿性の低下による半田クラック等があり、満足
できるレベルには達していないのが現状である。更に、
近年の環境対策から臭素化合物及び酸化アンチモンに対
する規制も厳しくなり、臭素化合物及び酸化アンチモン
を配合せず、かつ燐系難燃剤も含まない耐半田クラック
性、高温保管性及び耐燃性に優れた樹脂組成物が強く要
求されている。2. Description of the Related Art In recent years, in the market trend of miniaturization, weight reduction, and high performance of electronic equipment, semiconductor integration has been progressing year by year, and surface mounting of semiconductor devices has been promoted. Demands on anti-stop materials are becoming more stringent. Further, from the viewpoint of environmental friendliness, there is a demand for a resin composition that satisfies the flame resistance at the V-0 level of UL-94 and the high-temperature storage property. Conventionally, a bromine compound, which is a halogen compound, and antimony oxide have been blended as a flame retardant to generate antimony bromide at high temperatures to achieve flame retardancy. However, this method may cause problems such as corrosion of the aluminum wiring due to bromine or antimony bromide and disconnection of the connection between the aluminum pad and the gold wire of the semiconductor element while the electronic component is exposed to a high temperature. In order to solve these problems, using a red phosphorus-based flame retardant, a technique for improving high-temperature storage properties has also been proposed, but there are solder cracks due to a decrease in moisture resistance due to the red phosphorus-based flame retardant, At present, it has not reached a satisfactory level. Furthermore,
Due to recent environmental measures, regulations on bromine compounds and antimony oxide have become strict, and resin compositions that do not contain bromine compounds and antimony oxide and do not contain phosphorus-based flame retardants have excellent resistance to solder cracking, high-temperature storage and flame resistance. Things are strongly demanded.
【０００３】[0003]
【発明が解決しようとする課題】本発明は、耐半田クラ
ック性、高温保管性及び耐燃性に優れた半導体封止用エ
ポキシ樹脂組成物、及びこれを用いた半導体装置を提供
するものである。SUMMARY OF THE INVENTION The present invention provides an epoxy resin composition for semiconductor encapsulation which is excellent in solder crack resistance, high-temperature storage property and flame resistance, and a semiconductor device using the same.
【０００４】[0004]
【課題を解決するための手段】本発明は、（Ａ）エポキ
シ樹脂、（Ｂ）フェノール樹脂、（Ｃ）硬化促進剤、
（Ｄ）無機質充填材、（Ｅ）メラミン及び２５０℃以上
で１０重量％以上の結晶水を放出する無機化合物を必須
成分とする樹脂組成物であって、より好ましくは（Ｅ）
メラミン及び２５０℃以上で１０重量％以上の結晶水を
放出する無機化合物が、各々全樹脂組成物中に０．５〜
２重量％で、ハロゲン系化合物、酸化アンチモン及び燐
系難燃剤を含まないことを特徴とする半導体封止用エポ
キシ樹脂組成物、及びこれを用いて封止された半導体装
置である。The present invention provides (A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator,
A resin composition comprising (D) an inorganic filler, (E) melamine, and an inorganic compound that releases 10% by weight or more of water of crystallization at 250 ° C. or higher, and more preferably (E)
Melamine and an inorganic compound that releases 10% by weight or more of crystallization water at 250 ° C. or more are contained in the total resin composition in an amount of 0.5 to 0.5%.
An epoxy resin composition for encapsulating a semiconductor, characterized in that it does not contain a halogen-based compound, antimony oxide or a phosphorus-based flame retardant at 2% by weight, and a semiconductor device encapsulated with the epoxy resin composition.
【０００５】[0005]
【発明の実施の形態】本発明に用いられるエポキシ樹脂
は、１分子中にエポキシ基を２個以上有するモノマー、
オリゴマー、ポリマー全般を指し、例えば、ビスフェノ
ールＡ型エポキシ樹脂、フェノールノボラック型エポキ
シ樹脂、オルソクレゾールノボラック型エポキシ樹脂、
ナフトールノボラック型エポキシ樹脂、トリフェノール
メタン型エポキシ樹脂、ジシクロペンタジエン変性フェ
ノール型エポキシ樹脂、フェノールアラルキル型エポキ
シ樹脂、テルペン変性フェノール型エポキシ樹脂、ビフ
ェニル型エポキシ樹脂、ハイドロキノン型エポキシ樹
脂、スチルベン型エポキシ樹脂、ビスフェノールＦ型エ
ポキシ樹脂等が挙げられるが、これらに限定されるもの
ではない。又、これらのエポキシ樹脂は単独でも混合し
て用いてもよい。半導体装置の耐半田クラック性を向上
することを目的にエポキシ樹脂組成物中の無機質充填材
の配合量を増大させ、得られた樹脂組成物の硬化物の低
吸湿化、低熱膨張化、高強度化を達成させる場合には、
エポキシ樹脂として、常温で結晶性を示し、融点を越え
ると極めて低粘度の液状となる結晶性エポキシ樹脂を用
いることが特に好ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The epoxy resin used in the present invention is a monomer having two or more epoxy groups in one molecule,
Oligomer, generally refers to polymers, for example, bisphenol A type epoxy resin, phenol novolak type epoxy resin, ortho cresol novolak type epoxy resin,
Naphthol novolak epoxy resin, triphenol methane epoxy resin, dicyclopentadiene modified phenol epoxy resin, phenol aralkyl epoxy resin, terpene modified phenol epoxy resin, biphenyl epoxy resin, hydroquinone epoxy resin, stilbene epoxy resin, Examples include bisphenol F type epoxy resins, but are not limited thereto. These epoxy resins may be used alone or as a mixture. Increasing the amount of the inorganic filler in the epoxy resin composition for the purpose of improving the solder crack resistance of the semiconductor device, and reducing the moisture absorption, lowering the thermal expansion, and increasing the strength of the cured product of the obtained resin composition. If you want to achieve
As the epoxy resin, it is particularly preferable to use a crystalline epoxy resin which exhibits crystallinity at normal temperature and becomes a liquid having an extremely low viscosity when the melting point is exceeded.
【０００６】本発明で用いられるフェノール樹脂として
は、フェノールノボラック樹脂、クレゾールノボラック
樹脂、フェノールアラルキル樹脂、テルペン変性フェノ
ール樹脂、ジシクロペンタジエン変性フェノール樹脂、
ナフトールアラルキル樹脂、トリフェノールメタン型樹
脂、ビスフェノール型樹脂等が挙げられるが、これらに
限定されるものではない。又、これらのフェノール樹脂
は単独でも混合して用いてもよい。エポキシ基及びフェ
ノール水酸基の当量比は、連続成形性、硬化性の点から
０．８〜１．２の範囲が好ましい。The phenol resin used in the present invention includes phenol novolak resin, cresol novolak resin, phenol aralkyl resin, terpene-modified phenol resin, dicyclopentadiene-modified phenol resin,
Examples include, but are not limited to, naphthol aralkyl resins, triphenolmethane resins, bisphenol resins, and the like. Further, these phenol resins may be used alone or in combination. The equivalent ratio of the epoxy group and the phenolic hydroxyl group is preferably in the range of 0.8 to 1.2 from the viewpoint of continuous moldability and curability.
【０００７】本発明で用いられる硬化促進剤としては、
前記エポキシ樹脂とフェノール樹脂との架橋反応の触媒
となり得るものを指し、具体例としては、トリブチルア
ミン、１，８−ジアザビシクロ（５，４，０）ウンデセ
ン−７等のアミン系化合物、トリフェニルホスフィン、
テトラフェニルホスホニウム・テトラフェニルボレート
塩等の有機燐系化合物、２−メチルイミダゾール等のイ
ミダゾール化合物等が挙げられるが、これらに限定され
るものではない。又、これらの硬化促進剤は単独でも混
合して用いてもよい。The curing accelerator used in the present invention includes:
A substance that can serve as a catalyst for a crosslinking reaction between the epoxy resin and the phenol resin. Specific examples include amine compounds such as tributylamine and 1,8-diazabicyclo (5,4,0) undecene-7, and triphenylphosphine. ,
Examples include organic phosphorus compounds such as tetraphenylphosphonium / tetraphenylborate salts, and imidazole compounds such as 2-methylimidazole, but are not limited thereto. These curing accelerators may be used alone or as a mixture.
【０００８】本発明で用いられる無機質充填材として
は、例えば、溶融シリカ、結晶シリカ、アルミナ、窒化
珪素、窒化アルミ等が挙げられる。無機質充填材の配合
量を特に大きくする場合は、溶融シリカを用いるのが一
般的である。溶融シリカは、破砕状、球状のいずれでも
使用可能であるが、溶融シリカの配合量を高め、且つ成
形材料の溶融粘度の上昇を抑えるためには、球状のもの
を主に用いる方が好ましい。更に球状シリカの配合量を
高めるためには、球状シリカの粒度分布がより広くなる
ように調整することが好ましい。The inorganic filler used in the present invention includes, for example, fused silica, crystalline silica, alumina, silicon nitride, aluminum nitride and the like. When the amount of the inorganic filler is particularly large, it is common to use fused silica. Fused silica can be used in either crushed or spherical form. However, in order to increase the blending amount of the fused silica and suppress an increase in the melt viscosity of the molding material, it is preferable to mainly use a spherical form. In order to further increase the content of the spherical silica, it is preferable to adjust the particle size distribution of the spherical silica to be wider.
【０００９】本発明で用いられるメラミン及び２５０℃
以上で１０重量％以上の結晶水を放出する無機化合物
は、難燃剤として作用するものである。メラミンは、冷
水、大部分の溶剤に不溶の物質で、半導体封止用樹脂組
成物への適用に最適である。一般に、ホルムアルデヒド
と共に加熱反応させメチロール化したメラミン樹脂の難
燃剤としての適用例は多いが、半導体封止用エポキシ樹
脂組成物においては、メラミン樹脂の自身の吸湿性に起
因する半導体装置の耐湿性の低下のため、用いることは
できなかった。Melamine used in the present invention and 250 ° C.
As described above, the inorganic compound that releases 10% by weight or more of water of crystallization functions as a flame retardant. Melamine is a substance insoluble in cold water and most solvents, and is most suitable for application to a resin composition for semiconductor encapsulation. In general, there are many applications as a flame retardant of a melamine resin that has been heated and reacted with formaldehyde to form methylol, but in an epoxy resin composition for encapsulating a semiconductor, the moisture resistance of a semiconductor device due to its own hygroscopicity of the melamine resin. Due to the decrease, it could not be used.
【００１０】本発明に用いられる２５０℃以上で１０重
量％以上の結晶水を放出する無機化合物としては、水酸
化マグネシウム、硼酸亜鉛２ＺｎＯ・３Ｂ2Ｏ3・３．５
Ｈ2Ｏ、硼酸カルシウムＣａＯ・３Ｂ2Ｏ3・５Ｈ2Ｏ等が
挙げられる。難燃剤として用いられる無機化合物の結晶
水の放出温度が２５０℃未満の場合、燃焼初期段階で結
晶水を放出してしまい難燃効果が発現されず、又、結晶
水の放出量が１０重量％未満のものも十分な難燃性が得
られない。メラミンと２５０℃以上で１０重量％以上の
結晶水を放出する無機化合物の添加量は、全樹脂組成物
中各々０．５〜２重量％、更に好ましくは０．５〜１．
５重量％である。メラミン、又は２５０℃以上で１０重
量％以上の結晶水を放出する無機化合物の単独使用で
は、難燃特性にバラツキがあり充分な難燃性が得られ
ず、好ましくない。添加量が各々０．５重量％未満だと
安定した難燃性を得ることができず、２．０重量％を越
えると難燃性は発現されるが成形時の流動性の低下、得
られた半導体装置の耐湿性低下に起因する耐半田クラッ
ク性の低下のため実用的ではない。これらの組み合わせ
での難燃化は、メラミンの窒素分に基づく難燃性付与と
無機化合物の結晶水による燃焼温度の低下の相乗効果に
よるものである。本発明で用いる２５０℃以上で１０重
量％以上の結晶水を放出する無機化合物の結晶水解離温
度と結晶水放出量は、ＴＧＡ（熱重量分析法）を用いて
昇温速度１０℃／分で常温から５００℃まで測定し、得
られたピークから求める。The inorganic compounds used in the present invention that release 10% by weight or more of water of crystallization at 250 ° C. or more include magnesium hydroxide and zinc borate 2ZnO.3B 2 O 3 .3.5.
H 2 O, calcium borate CaO.3B 2 O 3 .5H 2 O and the like. When the release temperature of the water of crystallization of the inorganic compound used as a flame retardant is less than 250 ° C., the water of crystallization is released in the initial stage of combustion, and the flame retardant effect is not exhibited. If less than this, sufficient flame retardancy cannot be obtained. The addition amount of melamine and the inorganic compound that releases 10% by weight or more of water of crystallization at 250 ° C. or higher is 0.5 to 2% by weight, more preferably 0.5 to 1% by weight in the total resin composition.
5% by weight. It is not preferable to use melamine or an inorganic compound that releases 10% by weight or more of crystallization water at 250 ° C. or more, since the flame retardant properties vary and sufficient flame retardancy cannot be obtained. If the addition amount is less than 0.5% by weight, stable flame retardancy cannot be obtained, and if it exceeds 2.0% by weight, flame retardancy is exhibited, but the flowability during molding is lowered, and it is possible to obtain. It is not practical due to a decrease in solder crack resistance due to a decrease in moisture resistance of the semiconductor device. Flame retardation in these combinations is due to the synergistic effect of imparting flame retardancy based on the nitrogen content of melamine and lowering the combustion temperature due to water of crystallization of the inorganic compound. The crystal water dissociation temperature and the amount of water of crystallization of the inorganic compound that releases 10% by weight or more of water of crystallization at 250 ° C. or more used in the present invention were measured at a heating rate of 10 ° C./min using TGA (thermogravimetric analysis). It is measured from room temperature to 500 ° C., and determined from the obtained peak.
【００１１】本発明のエポキシ樹脂組成物は、（Ａ）〜
（Ｅ）成分を必須成分とするが、これ以外にも必要に応
じてカーボンブラック等の着色剤、天然ワックス及び合
成ワックス等の離型剤、シリコーンオイル、シリコーン
ゴム、合成ゴム等の低応力添加剤等を適宜配合してもよ
い。本発明のエポキシ樹脂組成物は、（Ａ）〜（Ｅ）成
分、及びその他の添加剤等を混合後、加熱ニーダや熱ロ
ールを用いて加熱混練し、続いて冷却、粉砕して得られ
る。本発明の樹脂組成物を用いて、半導体素子等の電子
部品を封止し、半導体装置を製造するには、トランスフ
ァーモールド、コンプレッションモールド、インジェク
ションモールド等の成形方法で成形硬化すればよい。The epoxy resin composition of the present invention comprises (A)
The component (E) is an essential component, but if necessary, a coloring agent such as carbon black, a release agent such as natural wax and synthetic wax, and a low stress addition such as silicone oil, silicone rubber, and synthetic rubber. Agents and the like may be appropriately blended. The epoxy resin composition of the present invention is obtained by mixing components (A) to (E), other additives, and the like, kneading with heat using a heating kneader or a hot roll, and then cooling and pulverizing. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the resin composition of the present invention, the molding may be performed by a molding method such as a transfer mold, a compression mold, and an injection mold.
【００１２】[0012]
【実施例】以下、本発明を実施例で具体的に説明する。
配合量の単位は重量部とする。 実施例１ ３，３’，５，５’−テトラメチルビフェノールジグリシジルエーテルを主成 分とするエポキシ樹脂（油化シェルエポキシ（株）・製、ＹＸ４０００Ｈ、融点 １０５℃、エポキシ当量１９５；以下ビフェニル型エポキシ樹脂という） ９．４重量部 フェノールアラルキル樹脂（三井化学(株)・製 ＸＬ２２５−ＬＬ、軟化点７ ５℃、水酸基当量１７５；フェノールアラルキル樹脂という） ８．４重量部 メラミン １．０重量部 硼酸亜鉛（２ＺｎＯ・３Ｂ2Ｏ3・３．５Ｈ2Ｏ）（結晶水解離温度３５０℃、 結晶水放出量１４重量％） １．０重量部 球状溶融シリカ ７９．５重量部 １，８−ジアザビシクロ（５，４，０）ウンデセン−７（以下、ＤＢＵという ） ０．２重量部 カルナバワックス ０．２重量部 カーボンブラック ０．３重量部 をミキサーを用いて混合した後、表面温度が９０℃と２
５℃の２軸ロールを用いて２０回混練し、得られた混練
物シートを冷却後粉砕して、エポキシ樹脂組成物とし
た。得られたエポキシ樹脂組成物の特性を以下の方法で
評価した。結果を表１に示す。The present invention will be specifically described below with reference to examples.
The unit of the compounding amount is part by weight. Example 1 Epoxy resin containing 3,3 ', 5,5'-tetramethylbiphenol diglycidyl ether as a main component (YX4000H, manufactured by Yuka Shell Epoxy Co., Ltd., melting point 105 ° C, epoxy equivalent 195; hereinafter biphenyl) 9.4 parts by weight Phenol aralkyl resin (XL225-LL, manufactured by Mitsui Chemicals, Inc., softening point 75 ° C., hydroxyl equivalent 175; referred to as phenol aralkyl resin) 8.4 parts by weight Melamine 1.0 part by weight part zinc borate (2ZnO · 3B 2 O 3 · 3.5H 2 O) ( crystal water dissociation temperature 350 ° C., crystallization water release amount 14 wt%) 1.0 parts by weight of spherical fused silica 79.5 parts by weight of 1,8 Diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU) 0.2 part by weight Carnauba wax 0.2 part by weight Carbon black 0.3 part After mixing using a mixer, the surface temperature was 90 ° C and 2 ° C.
The mixture was kneaded 20 times using a biaxial roll at 5 ° C., and the obtained kneaded material sheet was cooled and pulverized to obtain an epoxy resin composition. The properties of the obtained epoxy resin composition were evaluated by the following methods. Table 1 shows the results.
【００１３】評価方法 スパイラルフロー：ＥＭＭＩ−Ｉ−６６に準じたスパイ
ラルフロー測定用の金型を用いて、金型温度１７５℃、
注入圧力７０ｋｇ／ｃｍ2、硬化時間２分で測定した。 耐半田クラック性：金型温度１７５℃、成形圧力７５ｋ
ｇｆ／ｃｍ2、硬化時間２分で成形した１４４ｐＱＦＰ
パッケージを、１７５℃、８時間で後硬化させた。得ら
れた半導体パッケージ１０個を８５℃、相対湿度８５％
の環境下で１６８時間放置し、その後２４０℃の半田槽
に１０秒間浸漬した。顕微鏡で外部クラックを観察し、
クラック発生パッケージ数を表示した。 高温保管性：封止したテスト素子を高温下（１８５℃）
に放置し抵抗値の増加断線を観察し抵抗値上昇開始時間
を測定した。 耐燃性：ＵＬ−９４垂直試験法に準じて測定した（０．
５ｍｍ厚）。Evaluation method Spiral flow: Using a mold for spiral flow measurement in accordance with EMMI-I-66, a mold temperature of 175 ° C.
The measurement was performed at an injection pressure of 70 kg / cm 2 and a curing time of 2 minutes. Solder crack resistance: Mold temperature 175 ° C, molding pressure 75k
144pQFP molded with gf / cm 2 and curing time of 2 minutes
The package was post cured at 175 ° C. for 8 hours. 85 ° C., 85% relative humidity
168 hours, and then immersed in a 240 ° C. solder bath for 10 seconds. Observe external cracks with a microscope,
The number of cracked packages is displayed. High temperature storage: Sealed test element under high temperature (185 ° C)
And observed the disconnection of the increase in the resistance value, and measured the start time of the increase in the resistance value. Flame resistance: Measured according to the UL-94 vertical test method (0.
5 mm thick).
【００１４】実施例２〜５、比較例１〜５ 表１、表２に示す配合にて実施例１と同様にしてエポキ
シ樹脂組成物を得、実施例１と同様にして評価した。結
果を表１、表２に示す。実施例１以外に用いた原材料
は、以下の通り。オルソクレゾールノボラック型エポキ
シ樹脂（軟化点６５℃、エポキシ当量２００）、臭素化
エポキシ樹脂（軟化点６５℃、エポキシ当量２７５）、
フェノールノボラック樹脂（軟化点８０℃、水酸基当量
１０４）、硼酸カルシウム（ＣａＯ・３Ｂ2Ｏ3・５Ｈ2
Ｏ、結晶水解離温度３５０℃、結晶水放出量２３重量
％）、水酸化アルミニウム（結晶水解離温度２００℃、
結晶水放出量３４重量％）。Examples 2 to 5, Comparative Examples 1 to 5 Epoxy resin compositions were obtained in the same manner as in Example 1 with the formulations shown in Tables 1 and 2, and evaluated in the same manner as in Example 1. The results are shown in Tables 1 and 2. The raw materials used in addition to Example 1 are as follows. Orthocresol novolak type epoxy resin (softening point 65 ° C, epoxy equivalent 200), brominated epoxy resin (softening point 65 ° C, epoxy equivalent 275),
Phenol novolac resin (softening point 80 ° C., hydroxyl equivalent 104), calcium borate (CaO · 3B 2 O 3 · 5H 2
O, crystallization water dissociation temperature 350 ° C, crystallization water release amount 23% by weight), aluminum hydroxide (crystal water dissociation temperature 200 ° C,
Crystal water release amount 34% by weight).
【００１５】[0015]
【表１】 [Table 1]
【００１６】[0016]
【表２】 [Table 2]
【００１７】[0017]
【発明の効果】本発明のエポキシ樹脂組成物は、ハロゲ
ン系化合物、酸化アンチモン及び燐系難燃剤を含まなく
とも耐半田クラック性、高温保管性及び耐燃性に優れて
いる。The epoxy resin composition of the present invention is excellent in solder crack resistance, high-temperature storage property and flame resistance even if it does not contain a halogen compound, antimony oxide and a phosphorus-based flame retardant.
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 23/31 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) H01L 23/31
Claims (3)
樹脂、（Ｃ）硬化促進剤、（Ｄ）無機質充填材、（Ｅ）
メラミン及び２５０℃以上で１０重量％以上の結晶水を
放出する無機化合物を必須成分とする樹脂組成物であっ
て、ハロゲン系化合物、酸化アンチモン及び燐系難燃剤
を含まないことを特徴とする半導体封止用エポキシ樹脂
組成物。(A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D) an inorganic filler, (E)
A semiconductor composition comprising, as an essential component, melamine and an inorganic compound that releases 10% by weight or more of water of crystallization at 250 ° C. or more, and does not contain a halogen-based compound, antimony oxide, and a phosphorus-based flame retardant. Epoxy resin composition for sealing.
重量％以上の結晶水を放出する無機化合物を、全樹脂組
成物中に各々０．５〜２重量％含む請求項１記載の半導
体封止用エポキシ樹脂組成物。2. (E) Melamine and 10 ° C at 250 ° C. or higher.
2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein each of the resin compositions contains 0.5 to 2% by weight of an inorganic compound that releases water of crystallization in an amount of at least% by weight. 3.
ポキシ樹脂樹脂組成物を用いて半導体素子を封止してな
ることを特徴とする半導体装置。3. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1 or 2.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09789499A JP4513136B2 (en) | 1999-04-05 | 1999-04-05 | Epoxy resin composition and semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09789499A JP4513136B2 (en) | 1999-04-05 | 1999-04-05 | Epoxy resin composition and semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| JP2000290470A true JP2000290470A (en) | 2000-10-17 |
| JP4513136B2 JP4513136B2 (en) | 2010-07-28 |
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ID=14204465
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005281597A (en) * | 2004-03-30 | 2005-10-13 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07278443A (en) * | 1993-05-25 | 1995-10-24 | Sumitomo Bakelite Co Ltd | Flame-retardant resin composition |
| JPH07331033A (en) * | 1994-06-15 | 1995-12-19 | Sumitomo Bakelite Co Ltd | Tough epoxy resin composition good in flame retardancy |
| JPH0812743A (en) * | 1994-06-28 | 1996-01-16 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
| JPH0812742A (en) * | 1994-06-28 | 1996-01-16 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
| JPH0820628A (en) * | 1994-07-07 | 1996-01-23 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
| JPH0820631A (en) * | 1994-07-07 | 1996-01-23 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
| JPH08143641A (en) * | 1994-11-21 | 1996-06-04 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and its production |
| JPH08157559A (en) * | 1994-12-12 | 1996-06-18 | Sumitomo Bakelite Co Ltd | Semiconductor-sealing epoxy resin composition |
| JPH08157560A (en) * | 1994-12-12 | 1996-06-18 | Sumitomo Bakelite Co Ltd | Semiconductor-sealing epoxy resin composition |
| JPH10182792A (en) * | 1996-12-27 | 1998-07-07 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing electronic part and electronic part |
| JPH10212396A (en) * | 1997-01-30 | 1998-08-11 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing electronic component and electronic part item sealed therewith |
| JPH10214927A (en) * | 1997-01-30 | 1998-08-11 | Hitachi Chem Co Ltd | Epoxy resin molding material for electronic part sealing and electronic part |
| JPH11217487A (en) * | 1998-02-02 | 1999-08-10 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing electronic part, and electronic part |
| JP2000129085A (en) * | 1998-10-23 | 2000-05-09 | Hitachi Chem Co Ltd | Epoxy resin composition for semiconductor sealing and semiconductor device sealed therewith |
| JP2000281761A (en) * | 1999-03-30 | 2000-10-10 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and electronic component device |
-
1999
- 1999-04-05 JP JP09789499A patent/JP4513136B2/en not_active Expired - Fee Related
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07278443A (en) * | 1993-05-25 | 1995-10-24 | Sumitomo Bakelite Co Ltd | Flame-retardant resin composition |
| JPH07331033A (en) * | 1994-06-15 | 1995-12-19 | Sumitomo Bakelite Co Ltd | Tough epoxy resin composition good in flame retardancy |
| JPH0812743A (en) * | 1994-06-28 | 1996-01-16 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
| JPH0812742A (en) * | 1994-06-28 | 1996-01-16 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
| JPH0820628A (en) * | 1994-07-07 | 1996-01-23 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
| JPH0820631A (en) * | 1994-07-07 | 1996-01-23 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
| JPH08143641A (en) * | 1994-11-21 | 1996-06-04 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and its production |
| JPH08157559A (en) * | 1994-12-12 | 1996-06-18 | Sumitomo Bakelite Co Ltd | Semiconductor-sealing epoxy resin composition |
| JPH08157560A (en) * | 1994-12-12 | 1996-06-18 | Sumitomo Bakelite Co Ltd | Semiconductor-sealing epoxy resin composition |
| JPH10182792A (en) * | 1996-12-27 | 1998-07-07 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing electronic part and electronic part |
| JPH10212396A (en) * | 1997-01-30 | 1998-08-11 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing electronic component and electronic part item sealed therewith |
| JPH10214927A (en) * | 1997-01-30 | 1998-08-11 | Hitachi Chem Co Ltd | Epoxy resin molding material for electronic part sealing and electronic part |
| JPH11217487A (en) * | 1998-02-02 | 1999-08-10 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing electronic part, and electronic part |
| JP2000129085A (en) * | 1998-10-23 | 2000-05-09 | Hitachi Chem Co Ltd | Epoxy resin composition for semiconductor sealing and semiconductor device sealed therewith |
| JP2000281761A (en) * | 1999-03-30 | 2000-10-10 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and electronic component device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005281597A (en) * | 2004-03-30 | 2005-10-13 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
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| Publication number | Publication date |
|---|---|
| JP4513136B2 (en) | 2010-07-28 |
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