JP2000236097A5 - - Google Patents

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Publication number
JP2000236097A5
JP2000236097A5 JP1999359287A JP35928799A JP2000236097A5 JP 2000236097 A5 JP2000236097 A5 JP 2000236097A5 JP 1999359287 A JP1999359287 A JP 1999359287A JP 35928799 A JP35928799 A JP 35928799A JP 2000236097 A5 JP2000236097 A5 JP 2000236097A5
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Japan
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conductive layer
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contact
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JP1999359287A
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English (en)
Japanese (ja)
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JP2000236097A (ja
JP4641582B2 (ja
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Priority to JP35928799A priority Critical patent/JP4641582B2/ja
Priority claimed from JP35928799A external-priority patent/JP4641582B2/ja
Publication of JP2000236097A publication Critical patent/JP2000236097A/ja
Publication of JP2000236097A5 publication Critical patent/JP2000236097A5/ja
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Publication of JP4641582B2 publication Critical patent/JP4641582B2/ja
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Expired - Fee Related legal-status Critical Current

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JP35928799A 1998-12-18 1999-12-17 半導体装置の作製方法 Expired - Fee Related JP4641582B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35928799A JP4641582B2 (ja) 1998-12-18 1999-12-17 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-361535 1998-12-18
JP36153598 1998-12-18
JP35928799A JP4641582B2 (ja) 1998-12-18 1999-12-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000236097A JP2000236097A (ja) 2000-08-29
JP2000236097A5 true JP2000236097A5 (cg-RX-API-DMAC7.html) 2007-05-10
JP4641582B2 JP4641582B2 (ja) 2011-03-02

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ID=26580944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35928799A Expired - Fee Related JP4641582B2 (ja) 1998-12-18 1999-12-17 半導体装置の作製方法

Country Status (1)

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JP (1) JP4641582B2 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7776712B2 (en) 1998-12-03 2010-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7525165B2 (en) * 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6562671B2 (en) 2000-09-22 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
JP5046452B2 (ja) 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4954366B2 (ja) 2000-11-28 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002203972A (ja) * 2001-01-05 2002-07-19 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイとそれを用いた液晶表示装置
KR100437475B1 (ko) * 2001-04-13 2004-06-23 삼성에스디아이 주식회사 평판 디스플레이 장치용 표시 소자 제조 방법
JP3953330B2 (ja) 2002-01-25 2007-08-08 三洋電機株式会社 表示装置
JP3723507B2 (ja) 2002-01-29 2005-12-07 三洋電機株式会社 駆動回路
JP2003308030A (ja) 2002-02-18 2003-10-31 Sanyo Electric Co Ltd 表示装置
JP2003332058A (ja) 2002-03-05 2003-11-21 Sanyo Electric Co Ltd エレクトロルミネッセンスパネルおよびその製造方法
CN100517422C (zh) 2002-03-07 2009-07-22 三洋电机株式会社 配线结构、其制造方法、以及光学设备
JP3837344B2 (ja) 2002-03-11 2006-10-25 三洋電機株式会社 光学素子およびその製造方法
JP4459655B2 (ja) * 2004-02-27 2010-04-28 セイコーインスツル株式会社 半導体集積回路装置
US7615495B2 (en) 2005-11-17 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
KR101250789B1 (ko) 2006-06-30 2013-04-08 엘지디스플레이 주식회사 액정표시장치의 제조방법
JP5098508B2 (ja) * 2007-08-13 2012-12-12 ソニー株式会社 有機エレクトロルミネッセンス表示装置、及び、有機エレクトロルミネッセンス発光部を駆動するための駆動回路、並びに、有機エレクトロルミネッセンス発光部の駆動方法
JP5575455B2 (ja) 2009-10-29 2014-08-20 株式会社ジャパンディスプレイ 表示装置の製造方法
US20220059635A1 (en) * 2020-03-20 2022-02-24 Chengdu Boe Optoelectronics Technology Co., Ltd. Display panel and display device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810299B2 (ja) * 1988-03-11 1996-01-31 株式会社精工舎 薄膜トランジスタアレイ
JPH02290029A (ja) * 1989-04-28 1990-11-29 Fujitsu Ltd 薄膜トランジスタマトリクスの製造方法
JP3293837B2 (ja) * 1991-02-20 2002-06-17 セイコーエプソン株式会社 薄膜トランジスタの製造方法
DE69326123T2 (de) * 1992-06-24 1999-12-23 Seiko Epson Corp., Tokio/Tokyo Dünnfilmtransistor und verfahren zur herstellung eines dünnfilmtransistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7776712B2 (en) 1998-12-03 2010-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device

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