JP2000236074A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

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Publication number
JP2000236074A
JP2000236074A JP11309114A JP30911499A JP2000236074A JP 2000236074 A JP2000236074 A JP 2000236074A JP 11309114 A JP11309114 A JP 11309114A JP 30911499 A JP30911499 A JP 30911499A JP 2000236074 A JP2000236074 A JP 2000236074A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor
concentration
mis transistor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11309114A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000236074A5 (enExample
Inventor
Shizunori Oyu
静憲 大湯
Junji Ogishima
淳史 荻島
Osamu Tsuchiya
修 土屋
Yoshitaka Tadaki
▲芳▼▲隆▼ 只木
Kozo Watabe
浩三 渡部
Hiroyuki Uchiyama
博之 内山
Yoshihiro Ikeda
良広 池田
Tsutomu Okazaki
勉 岡崎
Hisao Asakura
久雄 朝倉
Keizo Kawakita
惠三 川北
Masahiro Shigeniwa
昌弘 茂庭
Katsuhiko Kubota
勝彦 久保田
Yutaka Kujirai
裕 鯨井
Kazuhiko Kajitani
一彦 梶谷
Yasushi Nagashima
靖 永島
Masayuki Nakamura
正行 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11309114A priority Critical patent/JP2000236074A/ja
Publication of JP2000236074A publication Critical patent/JP2000236074A/ja
Publication of JP2000236074A5 publication Critical patent/JP2000236074A5/ja
Pending legal-status Critical Current

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  • Semiconductor Memories (AREA)
JP11309114A 1998-12-17 1999-10-29 半導体集積回路装置およびその製造方法 Pending JP2000236074A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11309114A JP2000236074A (ja) 1998-12-17 1999-10-29 半導体集積回路装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-359842 1998-12-17
JP35984298 1998-12-17
JP11309114A JP2000236074A (ja) 1998-12-17 1999-10-29 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2000236074A true JP2000236074A (ja) 2000-08-29
JP2000236074A5 JP2000236074A5 (enExample) 2004-11-04

Family

ID=26565834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11309114A Pending JP2000236074A (ja) 1998-12-17 1999-10-29 半導体集積回路装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2000236074A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002100746A (ja) * 2000-09-21 2002-04-05 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2006073981A (ja) * 2004-09-02 2006-03-16 Hynix Semiconductor Inc 半導体素子のセルチャンネルイオン注入方法
JP2006165504A (ja) * 2004-12-03 2006-06-22 Hynix Semiconductor Inc ゲートリセス構造及びその形成方法
US7247890B2 (en) 2003-11-10 2007-07-24 Hitachi, Ltd. Semiconductor device and manufacturing method thereof
JP2008235330A (ja) * 2007-03-16 2008-10-02 Elpida Memory Inc 半導体装置の製造方法
US7994012B2 (en) 2008-08-01 2011-08-09 Renesas Electronics Corporation Semiconductor device and a method of manufacturing the same
WO2014126201A1 (ja) * 2013-02-15 2014-08-21 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
JP2019195028A (ja) * 2018-05-02 2019-11-07 株式会社半導体エネルギー研究所 記憶装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002100746A (ja) * 2000-09-21 2002-04-05 Hitachi Ltd 半導体集積回路装置およびその製造方法
US7247890B2 (en) 2003-11-10 2007-07-24 Hitachi, Ltd. Semiconductor device and manufacturing method thereof
KR101062491B1 (ko) 2003-11-10 2011-09-05 가부시키가이샤 히타치세이사쿠쇼 반도체 장치 및 반도체 장치의 제조 방법
JP2006073981A (ja) * 2004-09-02 2006-03-16 Hynix Semiconductor Inc 半導体素子のセルチャンネルイオン注入方法
JP2006165504A (ja) * 2004-12-03 2006-06-22 Hynix Semiconductor Inc ゲートリセス構造及びその形成方法
JP2008235330A (ja) * 2007-03-16 2008-10-02 Elpida Memory Inc 半導体装置の製造方法
US7994012B2 (en) 2008-08-01 2011-08-09 Renesas Electronics Corporation Semiconductor device and a method of manufacturing the same
WO2014126201A1 (ja) * 2013-02-15 2014-08-21 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US9461053B2 (en) 2013-02-15 2016-10-04 Ps4 Luxco S.A.R.L. Semiconductor device
JP2019195028A (ja) * 2018-05-02 2019-11-07 株式会社半導体エネルギー研究所 記憶装置
JP7171226B2 (ja) 2018-05-02 2022-11-15 株式会社半導体エネルギー研究所 記憶装置

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