US5679152A
(en)
*
|
1994-01-27 |
1997-10-21 |
Advanced Technology Materials, Inc. |
Method of making a single crystals Ga*N article
|
US6958093B2
(en)
*
|
1994-01-27 |
2005-10-25 |
Cree, Inc. |
Free-standing (Al, Ga, In)N and parting method for forming same
|
JP2000323797A
(ja)
*
|
1999-05-10 |
2000-11-24 |
Pioneer Electronic Corp |
窒化物半導体レーザ及びその製造方法
|
JP3946427B2
(ja)
*
|
2000-03-29 |
2007-07-18 |
株式会社東芝 |
エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法
|
US6525335B1
(en)
*
|
2000-11-06 |
2003-02-25 |
Lumileds Lighting, U.S., Llc |
Light emitting semiconductor devices including wafer bonded heterostructures
|
US8507361B2
(en)
|
2000-11-27 |
2013-08-13 |
Soitec |
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
|
FR2840731B3
(fr)
*
|
2002-06-11 |
2004-07-30 |
Soitec Silicon On Insulator |
Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
|
US20020187427A1
(en)
*
|
2001-05-18 |
2002-12-12 |
Ulrich Fiebag |
Additive composition for both rinse water recycling in water recycling systems and simultaneous surface treatment of lithographic printing plates
|
US6488767B1
(en)
*
|
2001-06-08 |
2002-12-03 |
Advanced Technology Materials, Inc. |
High surface quality GaN wafer and method of fabricating same
|
KR100482174B1
(ko)
*
|
2001-08-08 |
2005-04-13 |
삼성전기주식회사 |
기판제거 기술을 이용한 GaN계 LED 제작 방법
|
TWI226139B
(en)
*
|
2002-01-31 |
2005-01-01 |
Osram Opto Semiconductors Gmbh |
Method to manufacture a semiconductor-component
|
US7379203B2
(en)
*
|
2002-03-22 |
2008-05-27 |
Laser Substrates, Inc. |
Data capture during print process
|
DE10252060B4
(de)
*
|
2002-11-08 |
2006-10-12 |
Osram Opto Semiconductors Gmbh |
Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung einer Vielzahl von Halbleiterschichten
|
KR101247727B1
(ko)
*
|
2003-01-31 |
2013-03-26 |
오스람 옵토 세미컨덕터스 게엠베하 |
반도체 소자 제조 방법
|
KR20110010839A
(ko)
*
|
2003-01-31 |
2011-02-07 |
오스람 옵토 세미컨덕터스 게엠베하 |
박막 반도체 소자 및 상기 소자의 제조 방법
|
KR100678407B1
(ko)
*
|
2003-03-18 |
2007-02-02 |
크리스탈 포토닉스, 인코포레이티드 |
Ⅲ족 질화물 장치를 제조하는 방법과 이 방법으로 제조된장치
|
EP1484794A1
(en)
*
|
2003-06-06 |
2004-12-08 |
S.O.I. Tec Silicon on Insulator Technologies S.A. |
A method for fabricating a carrier substrate
|
DE102004036295A1
(de)
*
|
2003-07-29 |
2005-03-03 |
GELcore, LLC (n.d.Ges.d. Staates Delaware), Valley View |
Flip-Chip-Leuchtdioden-Bauelemente mit Substraten, deren Dicke verringert wurde oder die entfernt wurden
|
US7009215B2
(en)
*
|
2003-10-24 |
2006-03-07 |
General Electric Company |
Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
|
JP4954712B2
(ja)
*
|
2003-12-24 |
2012-06-20 |
ジーイー ライティング ソリューションズ エルエルシー |
窒化物フリップチップからのサファイヤのレーザ・リフトオフ
|
EP1569263B1
(de)
*
|
2004-02-27 |
2011-11-23 |
OSRAM Opto Semiconductors GmbH |
Verfahren zum Verbinden zweier Wafer
|
US6956246B1
(en)
*
|
2004-06-03 |
2005-10-18 |
Lumileds Lighting U.S., Llc |
Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal
|
CN100435360C
(zh)
*
|
2004-12-27 |
2008-11-19 |
北京大学 |
带有二维自然散射出光面的led芯片的制备方法
|
CN100438095C
(zh)
*
|
2005-01-14 |
2008-11-26 |
财团法人工业技术研究院 |
一种具准全方位反射器的发光二极管
|
US7125734B2
(en)
*
|
2005-03-09 |
2006-10-24 |
Gelcore, Llc |
Increased light extraction from a nitride LED
|
US9708735B2
(en)
|
2005-06-23 |
2017-07-18 |
Sumitomo Electric Industries, Ltd. |
Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
|
US8771552B2
(en)
*
|
2005-06-23 |
2014-07-08 |
Sumitomo Electric Industries, Ltd. |
Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
|
JP4277826B2
(ja)
|
2005-06-23 |
2009-06-10 |
住友電気工業株式会社 |
窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
|
KR100922401B1
(ko)
*
|
2006-02-03 |
2009-10-19 |
가부시키가이샤 리코 |
면 발광 레이저 소자 및 이를 포함한 면 발광 레이저어레이
|
KR20090045310A
(ko)
*
|
2006-08-06 |
2009-05-07 |
라이트웨이브 포토닉스 인코포레이티드 |
하나 이상의 공진 반사기를 갖는 3족 질화물 발광소자 및 그 소자를 위한 반사 설계된 성장 템플릿 및, 방법
|
KR100829562B1
(ko)
|
2006-08-25 |
2008-05-14 |
삼성전자주식회사 |
기판 접합 구조를 갖는 반도체 레이저 다이오드 및 그제조방법
|
JP2008211164A
(ja)
*
|
2007-01-29 |
2008-09-11 |
Matsushita Electric Ind Co Ltd |
窒化物半導体発光装置及びその製造方法
|
DE102008019268A1
(de)
*
|
2008-02-29 |
2009-09-03 |
Osram Opto Semiconductors Gmbh |
Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
|
JP5521478B2
(ja)
*
|
2008-10-22 |
2014-06-11 |
日亜化学工業株式会社 |
窒化物半導体発光素子の製造方法及び窒化物半導体発光素子
|
WO2011000568A1
(en)
*
|
2009-07-02 |
2011-01-06 |
Ecole Polytechnique Federale De Lausanne |
Vertical cavity surface emitting devices incorporating wafer fused reflectors
|
EP2330697A1
(en)
*
|
2009-12-07 |
2011-06-08 |
S.O.I.Tec Silicon on Insulator Technologies |
Semiconductor device having an InGaN layer
|
JP5724316B2
(ja)
*
|
2009-12-22 |
2015-05-27 |
日亜化学工業株式会社 |
窒化物半導体レーザ素子
|
JP2012028749A
(ja)
|
2010-07-22 |
2012-02-09 |
Seoul Opto Devices Co Ltd |
発光ダイオード
|
KR101103639B1
(ko)
|
2010-12-06 |
2012-01-11 |
광주과학기술원 |
분산브라그반사소자를 이용한 자외선 발광다이오드 및 그 제조방법
|
CN102593291B
(zh)
*
|
2011-01-07 |
2014-12-03 |
山东华光光电子有限公司 |
一种氮化物分布式布拉格反射镜及制备方法与应用
|
FR2985370A1
(fr)
*
|
2011-12-29 |
2013-07-05 |
Commissariat Energie Atomique |
Procede de fabrication d'une structure multicouche sur un support
|
DE102013105035A1
(de)
*
|
2013-05-16 |
2014-11-20 |
Osram Opto Semiconductors Gmbh |
Verfahren zum Herstellen eines optoelektronischen Halbleiterchips
|
CN105957928B
(zh)
*
|
2016-05-31 |
2018-10-09 |
华灿光电股份有限公司 |
一种谐振腔发光二极管及其制造方法
|
WO2018191489A1
(en)
*
|
2017-04-12 |
2018-10-18 |
Sense Photonics, Inc. |
Ultra-small vertical cavity surface emitting laser (vcsel) and arrays incorporating the same
|
CN111600200B
(zh)
*
|
2020-06-05 |
2021-05-07 |
苏州汉骅半导体有限公司 |
垂直腔面发射激光器的制造方法及垂直腔面发射激光器
|
CN111725368A
(zh)
*
|
2020-06-30 |
2020-09-29 |
中南大学 |
一种基于电镀技术的GaN基垂直结构微腔Micro-LED及其制备方法
|