JP2000212749A - 薄膜形成装置、及び窒化タングステン薄膜製造方法 - Google Patents

薄膜形成装置、及び窒化タングステン薄膜製造方法

Info

Publication number
JP2000212749A
JP2000212749A JP11013791A JP1379199A JP2000212749A JP 2000212749 A JP2000212749 A JP 2000212749A JP 11013791 A JP11013791 A JP 11013791A JP 1379199 A JP1379199 A JP 1379199A JP 2000212749 A JP2000212749 A JP 2000212749A
Authority
JP
Japan
Prior art keywords
thin film
gas
source gas
deposition
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11013791A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000212749A5 (https=
Inventor
Masamichi Harada
雅通 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP11013791A priority Critical patent/JP2000212749A/ja
Priority to KR1019990062682A priority patent/KR100630647B1/ko
Priority to TW088123340A priority patent/TW579393B/zh
Priority to EP00100937A priority patent/EP1024210B1/en
Priority to DE60027935T priority patent/DE60027935T2/de
Priority to US09/489,338 priority patent/US6312761B1/en
Publication of JP2000212749A publication Critical patent/JP2000212749A/ja
Priority to US09/912,504 priority patent/US20020000199A1/en
Publication of JP2000212749A5 publication Critical patent/JP2000212749A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP11013791A 1999-01-22 1999-01-22 薄膜形成装置、及び窒化タングステン薄膜製造方法 Pending JP2000212749A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP11013791A JP2000212749A (ja) 1999-01-22 1999-01-22 薄膜形成装置、及び窒化タングステン薄膜製造方法
KR1019990062682A KR100630647B1 (ko) 1999-01-22 1999-12-27 박막형성장치, 및 질화텅스텐 박막 제조방법
TW088123340A TW579393B (en) 1999-01-22 1999-12-30 Thin film forming device and production of tungsten nitride thin film
EP00100937A EP1024210B1 (en) 1999-01-22 2000-01-18 Apparatus and method for producing tungsten nitride film
DE60027935T DE60027935T2 (de) 1999-01-22 2000-01-18 Vorrichtung und Verfahren zur Herstellung einer Wolframnitridschicht
US09/489,338 US6312761B1 (en) 1999-01-22 2000-01-21 Film forming method for processing tungsten nitride film
US09/912,504 US20020000199A1 (en) 1999-01-22 2001-07-26 Film forming apparatus and method for producing tungsten nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11013791A JP2000212749A (ja) 1999-01-22 1999-01-22 薄膜形成装置、及び窒化タングステン薄膜製造方法

Publications (2)

Publication Number Publication Date
JP2000212749A true JP2000212749A (ja) 2000-08-02
JP2000212749A5 JP2000212749A5 (https=) 2005-11-04

Family

ID=11843083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11013791A Pending JP2000212749A (ja) 1999-01-22 1999-01-22 薄膜形成装置、及び窒化タングステン薄膜製造方法

Country Status (6)

Country Link
US (2) US6312761B1 (https=)
EP (1) EP1024210B1 (https=)
JP (1) JP2000212749A (https=)
KR (1) KR100630647B1 (https=)
DE (1) DE60027935T2 (https=)
TW (1) TW579393B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7338900B2 (en) 2002-12-27 2008-03-04 Ulvac Inc. Method for forming tungsten nitride film
US7419904B2 (en) 2004-04-12 2008-09-02 Ulvac Inc. Method for forming barrier film and method for forming electrode film

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635570B1 (en) * 1999-09-30 2003-10-21 Carl J. Galewski PECVD and CVD processes for WNx deposition
JP2002085950A (ja) * 2000-09-18 2002-03-26 Horiba Ltd 流体混合装置
US7420227B2 (en) * 2005-06-22 2008-09-02 National Chiao Tung University Cu-metalized compound semiconductor device
US8148564B2 (en) * 2006-08-30 2012-04-03 Wayne State University Compounds for forming metal nitrides
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
JP4523661B1 (ja) * 2009-03-10 2010-08-11 三井造船株式会社 原子層堆積装置及び薄膜形成方法
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
JP2016507001A (ja) * 2012-12-21 2016-03-07 プラサド ナーハー ガジル セラミック薄膜の低温堆積方法
WO2017165016A1 (en) * 2016-03-25 2017-09-28 Applied Materials, Inc. Chamber liner for high temperature processing
CN114850003B (zh) 2021-02-03 2023-06-27 芝浦机械电子装置株式会社 加热处理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59131511A (ja) * 1983-01-17 1984-07-28 Zenko Hirose アモルフアスシリコン膜の成膜方法
JPS62116770A (ja) * 1985-11-15 1987-05-28 Canon Inc 成膜装置
JP2859632B2 (ja) * 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
JP2803297B2 (ja) * 1990-03-05 1998-09-24 日本電気株式会社 半導体装置の製造方法
KR930001300A (ko) * 1991-06-10 1993-01-16 김광호 화학 기상 박막 형성 방법 및 그 장치
US5470800A (en) * 1992-04-03 1995-11-28 Sony Corporation Method for forming an interlayer film
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3590416B2 (ja) * 1993-11-29 2004-11-17 アネルバ株式会社 薄膜形成方法および薄膜形成装置
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JP3699504B2 (ja) * 1995-05-30 2005-09-28 アネルバ株式会社 真空処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7338900B2 (en) 2002-12-27 2008-03-04 Ulvac Inc. Method for forming tungsten nitride film
US7419904B2 (en) 2004-04-12 2008-09-02 Ulvac Inc. Method for forming barrier film and method for forming electrode film

Also Published As

Publication number Publication date
TW579393B (en) 2004-03-11
KR20000052580A (ko) 2000-08-25
EP1024210B1 (en) 2006-05-17
EP1024210A1 (en) 2000-08-02
US6312761B1 (en) 2001-11-06
DE60027935T2 (de) 2007-04-26
KR100630647B1 (ko) 2006-10-02
DE60027935D1 (de) 2006-06-22
US20020000199A1 (en) 2002-01-03

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