DE60027935T2 - Vorrichtung und Verfahren zur Herstellung einer Wolframnitridschicht - Google Patents

Vorrichtung und Verfahren zur Herstellung einer Wolframnitridschicht Download PDF

Info

Publication number
DE60027935T2
DE60027935T2 DE60027935T DE60027935T DE60027935T2 DE 60027935 T2 DE60027935 T2 DE 60027935T2 DE 60027935 T DE60027935 T DE 60027935T DE 60027935 T DE60027935 T DE 60027935T DE 60027935 T2 DE60027935 T2 DE 60027935T2
Authority
DE
Germany
Prior art keywords
gas
film
reactor
tungsten nitride
adhesion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60027935T
Other languages
German (de)
English (en)
Other versions
DE60027935D1 (de
Inventor
Masamichi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Application granted granted Critical
Publication of DE60027935D1 publication Critical patent/DE60027935D1/de
Publication of DE60027935T2 publication Critical patent/DE60027935T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE60027935T 1999-01-22 2000-01-18 Vorrichtung und Verfahren zur Herstellung einer Wolframnitridschicht Expired - Lifetime DE60027935T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11013791A JP2000212749A (ja) 1999-01-22 1999-01-22 薄膜形成装置、及び窒化タングステン薄膜製造方法
JP1379199 1999-01-22

Publications (2)

Publication Number Publication Date
DE60027935D1 DE60027935D1 (de) 2006-06-22
DE60027935T2 true DE60027935T2 (de) 2007-04-26

Family

ID=11843083

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60027935T Expired - Lifetime DE60027935T2 (de) 1999-01-22 2000-01-18 Vorrichtung und Verfahren zur Herstellung einer Wolframnitridschicht

Country Status (6)

Country Link
US (2) US6312761B1 (https=)
EP (1) EP1024210B1 (https=)
JP (1) JP2000212749A (https=)
KR (1) KR100630647B1 (https=)
DE (1) DE60027935T2 (https=)
TW (1) TW579393B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635570B1 (en) * 1999-09-30 2003-10-21 Carl J. Galewski PECVD and CVD processes for WNx deposition
JP2002085950A (ja) * 2000-09-18 2002-03-26 Horiba Ltd 流体混合装置
KR101035221B1 (ko) 2002-12-27 2011-05-18 가부시키가이샤 알박 질화 텅스텐막의 형성 방법
CN100370585C (zh) 2004-04-12 2008-02-20 株式会社爱发科 隔离膜的形成方法及电极膜的形成方法
US7420227B2 (en) * 2005-06-22 2008-09-02 National Chiao Tung University Cu-metalized compound semiconductor device
US8148564B2 (en) * 2006-08-30 2012-04-03 Wayne State University Compounds for forming metal nitrides
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
JP4523661B1 (ja) * 2009-03-10 2010-08-11 三井造船株式会社 原子層堆積装置及び薄膜形成方法
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
JP2016507001A (ja) * 2012-12-21 2016-03-07 プラサド ナーハー ガジル セラミック薄膜の低温堆積方法
WO2017165016A1 (en) * 2016-03-25 2017-09-28 Applied Materials, Inc. Chamber liner for high temperature processing
CN114850003B (zh) 2021-02-03 2023-06-27 芝浦机械电子装置株式会社 加热处理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59131511A (ja) * 1983-01-17 1984-07-28 Zenko Hirose アモルフアスシリコン膜の成膜方法
JPS62116770A (ja) * 1985-11-15 1987-05-28 Canon Inc 成膜装置
JP2859632B2 (ja) * 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
JP2803297B2 (ja) * 1990-03-05 1998-09-24 日本電気株式会社 半導体装置の製造方法
KR930001300A (ko) * 1991-06-10 1993-01-16 김광호 화학 기상 박막 형성 방법 및 그 장치
US5470800A (en) * 1992-04-03 1995-11-28 Sony Corporation Method for forming an interlayer film
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3590416B2 (ja) * 1993-11-29 2004-11-17 アネルバ株式会社 薄膜形成方法および薄膜形成装置
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JP3699504B2 (ja) * 1995-05-30 2005-09-28 アネルバ株式会社 真空処理装置

Also Published As

Publication number Publication date
TW579393B (en) 2004-03-11
KR20000052580A (ko) 2000-08-25
EP1024210B1 (en) 2006-05-17
EP1024210A1 (en) 2000-08-02
US6312761B1 (en) 2001-11-06
KR100630647B1 (ko) 2006-10-02
DE60027935D1 (de) 2006-06-22
JP2000212749A (ja) 2000-08-02
US20020000199A1 (en) 2002-01-03

Similar Documents

Publication Publication Date Title
DE60027935T2 (de) Vorrichtung und Verfahren zur Herstellung einer Wolframnitridschicht
DE60129380T2 (de) Vorrichtung und Verfahren zum Auftragen einer Dünnschicht auf einen Wafer durch Abscheidung von atomaren Schichten
DE69630484T2 (de) Reaktivgasinjektor für Vorrichtung zur chemischen Gasphasenabscheidung
DE112010002199B4 (de) Brausekopf für eine Vakuumschichtabscheidungsvorrichtung
DE69903466T2 (de) Gasverteilungsplatte mit zwei gaskanälen
DE69515926T2 (de) Verfahren zur Züchtung einer Halbleiterverbindungsschicht
DE3885833T2 (de) Chemischer Dampfabscheidungsapparat für die Herstellung von hochqualitativen epitaktischen Schichten mit gleichmässiger Dichte.
DE69331659T2 (de) Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung
DE69206808T2 (de) Verfahren zur herstellung von titannitridfilmen mit geringem spezifischem widerstand
DE10132882B4 (de) Verfahren zum Ausbilden einer Dünnschicht unter Verwendung einer Atomschichtabscheidung
DE69629412T2 (de) Anlage zur Dampfabscheidung von Dünnschichten
DE69007733T2 (de) Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck.
DE69426679T2 (de) Vorrichtung und Verfahren zur Sicherstellung der Hitzeübertragung auf BZW von einem ganzen Substrat während der Bearbeitung eines Halbleiterbauteils
DE19581483B4 (de) Verfahren und Vorrichtung zur Bildung von Dünnschichten
DE69222110T2 (de) Verfahren zum Herstellen einer Halbeiteranordnung, wobei auf der Oberfläche einer Halbleiterscheibe aus einem Prozessgas eine Materialschicht abgeschieden wird
DE112006003315T5 (de) Gaskopf und Dünnfilm-Herstellungsvorrichtung
DE19851824C2 (de) CVD-Reaktor
EP1255876A2 (de) Kondensationsbeschichtungsverfahren
DE60006095T2 (de) Reaktorkammer für einen epitaxiereaktor
DE4330266A1 (de) Reaktionskammer für chemischen Gasphasenabscheidungsapparat sowie chemischer Gasphasenabscheidungsapparat zum Benutzen einer derartigen Reaktionskammer
DE4005796A1 (de) Vorrichtung zum bilden einer duennenschicht
EP1349968B1 (de) Fluidverteilungsvorrichtung für mehrere fluide
DE2110289B2 (de) Verfahren zum Niederschlagen von Halbleitermaterial und Vorrichtung zu seiner Durchführung
WO2002044445A9 (de) Verfahren zum abscheiden von insbesondere kristallinen schichten sowie vorrichtung zur durchführung des verfahrens
DE102011054566A1 (de) Vorrichtung und Verfahren zum Abscheiden mehrkomponentiger Schichten, insbesondere metallorganischer Halbleiterschichten

Legal Events

Date Code Title Description
8364 No opposition during term of opposition