JP2000208029A5 - - Google Patents

Download PDF

Info

Publication number
JP2000208029A5
JP2000208029A5 JP1999007061A JP706199A JP2000208029A5 JP 2000208029 A5 JP2000208029 A5 JP 2000208029A5 JP 1999007061 A JP1999007061 A JP 1999007061A JP 706199 A JP706199 A JP 706199A JP 2000208029 A5 JP2000208029 A5 JP 2000208029A5
Authority
JP
Japan
Prior art keywords
electron
emitting
cylindrical body
manufacturing
substantially cylindrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999007061A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000208029A (ja
JP3494583B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP00706199A priority Critical patent/JP3494583B2/ja
Priority claimed from JP00706199A external-priority patent/JP3494583B2/ja
Priority to US09/480,415 priority patent/US6692327B1/en
Publication of JP2000208029A publication Critical patent/JP2000208029A/ja
Application granted granted Critical
Publication of JP3494583B2 publication Critical patent/JP3494583B2/ja
Publication of JP2000208029A5 publication Critical patent/JP2000208029A5/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP00706199A 1999-01-13 1999-01-13 電子放出素子の製造方法 Expired - Fee Related JP3494583B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP00706199A JP3494583B2 (ja) 1999-01-13 1999-01-13 電子放出素子の製造方法
US09/480,415 US6692327B1 (en) 1999-01-13 2000-01-11 Method for producing electron emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00706199A JP3494583B2 (ja) 1999-01-13 1999-01-13 電子放出素子の製造方法

Publications (3)

Publication Number Publication Date
JP2000208029A JP2000208029A (ja) 2000-07-28
JP3494583B2 JP3494583B2 (ja) 2004-02-09
JP2000208029A5 true JP2000208029A5 (enExample) 2004-10-07

Family

ID=11655564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP00706199A Expired - Fee Related JP3494583B2 (ja) 1999-01-13 1999-01-13 電子放出素子の製造方法

Country Status (2)

Country Link
US (1) US6692327B1 (enExample)
JP (1) JP3494583B2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MXPA03011487A (es) * 2001-06-14 2004-03-18 Hyperion Cataysis Internationa Dispositivos de emision de campo utilizando nanotubos de carbono modificado.
AU2003229333A1 (en) * 2002-05-21 2003-12-12 Eikos, Inc. Method for patterning carbon nanotube coating and carbon nanotube wiring
TWI220162B (en) * 2002-11-29 2004-08-11 Ind Tech Res Inst Integrated compound nano probe card and method of making same
KR100922743B1 (ko) 2003-03-25 2009-10-22 삼성에스디아이 주식회사 전계방출소자
KR100531793B1 (ko) * 2003-08-08 2005-11-30 엘지전자 주식회사 전계방출소자 및 제조방법
JP4599046B2 (ja) * 2003-09-24 2010-12-15 学校法人 名城大学 カーボンナノチューブ製フィラメントおよびその利用
KR100561491B1 (ko) * 2003-11-10 2006-03-20 일진다이아몬드(주) 코팅막이 형성된 전계방출소자 및 그것의 제조방법
KR20060011665A (ko) * 2004-07-30 2006-02-03 삼성에스디아이 주식회사 전자 방출 소자와 이의 제조 방법
JP2006351410A (ja) * 2005-06-17 2006-12-28 Toppan Printing Co Ltd 電子放出素子
KR20070046611A (ko) * 2005-10-31 2007-05-03 삼성에스디아이 주식회사 보호막이 형성된 전자 방출원 및 이를 포함한 전자 방출소자
CN101086939B (zh) * 2006-06-09 2010-05-12 清华大学 场发射元件及其制备方法
CN101093765B (zh) * 2006-06-23 2011-06-08 清华大学 场发射元件及其制备方法
CN101093764B (zh) * 2006-06-23 2012-03-28 清华大学 场发射元件及其制备方法
CN100573797C (zh) * 2006-07-05 2009-12-23 清华大学 双面发光的场发射像素管
US7635945B2 (en) * 2006-07-21 2009-12-22 Tsinghua University Field emission device having a hollow shaped shielding structure
JP4613327B2 (ja) * 2006-11-06 2011-01-19 学校法人 名城大学 カーボンナノチューブ製フィラメントおよびその利用
FR2909801B1 (fr) * 2006-12-08 2009-01-30 Thales Sa Tube electronique a cathode froide
US8729787B2 (en) * 2006-12-18 2014-05-20 Micron Technology, Inc. Field emission devices and methods for making the same
CN101335175B (zh) * 2007-06-29 2010-05-26 清华大学 场发射像素管
TWI394195B (zh) * 2007-07-20 2013-04-21 Hon Hai Prec Ind Co Ltd 場發射像素管
KR20090054675A (ko) * 2007-11-27 2009-06-01 삼성에스디아이 주식회사 전자 방출 디바이스, 이의 제조 방법 및 이를 포함하는전자 방출 디스플레이
JP5126741B2 (ja) 2007-12-26 2013-01-23 スタンレー電気株式会社 電界放射型電子源
US7978504B2 (en) * 2008-06-03 2011-07-12 Infineon Technologies Ag Floating gate device with graphite floating gate
JP5290087B2 (ja) * 2009-08-20 2013-09-18 株式会社ライフ技術研究所 電子線放射装置
CN102064063B (zh) * 2010-12-24 2012-08-29 清华大学 场发射阴极装置及其制备方法
CN103730303B (zh) * 2012-10-10 2016-09-07 清华大学 场发射电子源阵列及场发射装置
JP5738942B2 (ja) * 2012-10-10 2015-06-24 ツィンファ ユニバーシティ 電界放出電子源の製造方法及び電界放出電子源アレイの製造方法
CN103730304B (zh) * 2012-10-10 2016-12-21 清华大学 场发射电子源阵列的制备方法
CN103730302B (zh) * 2012-10-10 2016-09-14 清华大学 场发射电子源及场发射装置
CN103730305B (zh) * 2012-10-10 2016-03-09 清华大学 场发射电子源的制备方法
US9991081B2 (en) 2014-05-13 2018-06-05 Samsung Electronics Co., Ltd. Electron emitting device using graphene and method for manufacturing same
US10684308B1 (en) * 2017-12-11 2020-06-16 Gregory Hirsch Methods for stabilizing biological and soft materials for atom probe tomography

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2070478A1 (en) 1991-06-27 1992-12-28 Wolfgang M. Feist Fabrication method for field emission arrays
US5155420A (en) * 1991-08-05 1992-10-13 Smith Robert T Switching circuits employing field emission devices
WO1994015352A1 (en) 1992-12-23 1994-07-07 Microelectronics And Computer Technology Corporation Triode structure flat panel display employing flat field emission cathodes
GB2285168B (en) 1993-12-22 1997-07-16 Marconi Gec Ltd Electron field emission devices
US5709577A (en) 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
US5796211A (en) 1994-12-22 1998-08-18 Lucent Technologies, Inc. Microwave vacuum tube devices employing electron sources comprising activated ultrafine diamonds
JP2809129B2 (ja) 1995-04-20 1998-10-08 日本電気株式会社 電界放射冷陰極とこれを用いた表示装置
US5697827A (en) 1996-01-11 1997-12-16 Rabinowitz; Mario Emissive flat panel display with improved regenerative cathode
US5726524A (en) * 1996-05-31 1998-03-10 Minnesota Mining And Manufacturing Company Field emission device having nanostructured emitters
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
JPH1092294A (ja) 1996-09-13 1998-04-10 Sony Corp 電子放出源およびその製造方法ならびにこの電子放出源を用いたディスプレイ装置
KR100365444B1 (ko) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 진공마이크로장치와이를이용한화상표시장치
JP3792859B2 (ja) 1997-10-03 2006-07-05 株式会社ノリタケカンパニーリミテド 電子銃
DE69834673T2 (de) * 1997-09-30 2006-10-26 Noritake Co., Ltd., Nagoya Verfahren zur Herstellung einer Elektronenemittierenden Quelle
US6087765A (en) * 1997-12-03 2000-07-11 Motorola, Inc. Electron emissive film
US6232706B1 (en) * 1998-11-12 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Self-oriented bundles of carbon nanotubes and method of making same
US6250984B1 (en) * 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
EP1073090A3 (en) * 1999-07-27 2003-04-16 Iljin Nanotech Co., Ltd. Field emission display device using carbon nanotubes and manufacturing method thereof
US6299812B1 (en) * 1999-08-16 2001-10-09 The Board Of Regents Of The University Of Oklahoma Method for forming a fibers/composite material having an anisotropic structure

Similar Documents

Publication Publication Date Title
JP2000208029A5 (enExample)
US6692327B1 (en) Method for producing electron emitting element
De Jonge et al. Carbon nanotube electron sources and applications
Saito et al. Field emission from carbon nanotubes and its application to cathode ray tube lighting elements
US7459839B2 (en) Low voltage electron source with self aligned gate apertures, and luminous display using the electron source
EP0913508A3 (en) Carbon nanotube device, manufacturing method of carbon nanotube device, and electron emitting device
CA2351037A1 (en) Microwave vacuum tube device employing grid-modulated cold cathode source having nanotube emitters
WO2003009325A1 (en) Electron emitter and method for fabricating the same, cold cathode field electron emission element and method for fabricating the same, and cold cathode field electron emission display and method for manufacturing the same
EP1315191A3 (en) Composite for paste including carbon nanotubes, electron emitting device using the same, and manufacturing method thereof
JP3828270B2 (ja) 電子放出装置
KR20100123253A (ko) 나노구조 물질 기반 ｘ-선관을 위한 게이트-집속전극 일체형 전극 구조
JPH11111158A (ja) 電子銃
JPH09180622A (ja) 陰極構造体の構造及び電子放射体塗布方法
JP4043153B2 (ja) 電子放出源の製造方法、エミッタ基板の製造方法、電子放出源及び蛍光発光型表示器
EP1429363A3 (en) Field emission device
JP2001043792A5 (enExample)
WO2007035178A3 (en) Enhanced electron field emission from carbon nanotubes without activation
JP4036572B2 (ja) 電子放出源の製造方法
JP2000215786A (ja) 電子放出素子及びその製造方法
EP1308980A3 (en) Tunneling emitters and method of making
JP2001035361A5 (enExample)
FR2836279B1 (fr) Structure de cathode pour ecran emissif
JP2005276720A5 (enExample)
JP2000294119A5 (enExample)
JP2000311590A5 (enExample)