JP2000195798A - 半導体製造方法 - Google Patents

半導体製造方法

Info

Publication number
JP2000195798A
JP2000195798A JP36100299A JP36100299A JP2000195798A JP 2000195798 A JP2000195798 A JP 2000195798A JP 36100299 A JP36100299 A JP 36100299A JP 36100299 A JP36100299 A JP 36100299A JP 2000195798 A JP2000195798 A JP 2000195798A
Authority
JP
Japan
Prior art keywords
layer
substrate
crystal
growth
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP36100299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000195798A5 (https=
Inventor
Yong Chen
ヨン・チェン
Daburiyu Koojin Sukotsuto
スコット・ダブリュ・コージン
Theodore I Kamins
セオドア・アイ・カミンズ
Michael J Ludowise
マイケル・ジェイ・ルドワイズ
Pierre H Mertz
ピエール・エイチ・マーツ
Shih-Yuan Wang
シン−ユアン・ワン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2000195798A publication Critical patent/JP2000195798A/ja
Publication of JP2000195798A5 publication Critical patent/JP2000195798A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H10P30/209—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
JP36100299A 1998-12-23 1999-12-20 半導体製造方法 Withdrawn JP2000195798A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US221025 1988-07-18
US09/221,025 US6211095B1 (en) 1998-12-23 1998-12-23 Method for relieving lattice mismatch stress in semiconductor devices

Publications (2)

Publication Number Publication Date
JP2000195798A true JP2000195798A (ja) 2000-07-14
JP2000195798A5 JP2000195798A5 (https=) 2007-02-08

Family

ID=22826027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36100299A Withdrawn JP2000195798A (ja) 1998-12-23 1999-12-20 半導体製造方法

Country Status (3)

Country Link
US (2) US6211095B1 (https=)
EP (1) EP1014430A1 (https=)
JP (1) JP2000195798A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299254A (ja) * 2001-03-30 2002-10-11 Toyota Central Res & Dev Lab Inc 半導体基板の製造方法及び半導体素子
JP2005005723A (ja) * 2004-06-25 2005-01-06 Hitachi Cable Ltd 窒化物半導体エピタキシャルウェハの製造方法及び窒化物半導体エピタキシャルウェハ

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19802977A1 (de) * 1998-01-27 1999-07-29 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung einer einkristallinen Schicht auf einem nicht gitterangepaßten Substrat, sowie eine oder mehrere solcher Schichten enthaltendes Bauelement
JP4396793B2 (ja) * 2000-04-27 2010-01-13 ソニー株式会社 基板の製造方法
US6511858B2 (en) * 2000-09-27 2003-01-28 Fujitsu Quantum Devices Limited Method for fabricating semiconductor device
JP4127463B2 (ja) * 2001-02-14 2008-07-30 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の結晶成長方法及びｉｉｉ族窒化物系化合物半導体発光素子の製造方法
US6793731B2 (en) * 2002-03-13 2004-09-21 Sharp Laboratories Of America, Inc. Method for recrystallizing an amorphized silicon germanium film overlying silicon
DE10218381A1 (de) * 2002-04-24 2004-02-26 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer oder mehrerer einkristalliner Schichten mit jeweils unterschiedlicher Gitterstruktur in einer Ebene einer Schichtenfolge
EP1571241A1 (en) * 2004-03-01 2005-09-07 S.O.I.T.E.C. Silicon on Insulator Technologies Method of manufacturing a wafer
US7825432B2 (en) 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
EP2012367B1 (de) * 2007-07-02 2012-02-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mehrfachsolarzelle
TWI398017B (zh) * 2007-07-06 2013-06-01 Huga Optotech Inc 光電元件及其製作方法
CN101393951B (zh) * 2007-09-17 2010-06-02 广镓光电股份有限公司 光电元件及其制造方法
CN102792420B (zh) * 2010-03-05 2016-05-04 并木精密宝石株式会社 单晶衬底、单晶衬底的制造方法、带多层膜的单晶衬底的制造方法以及元件制造方法
SG185547A1 (en) 2010-05-18 2012-12-28 Agency Science Tech & Res Method of forming a light emitting diode structure and a light emitting diode structure
US8969181B2 (en) * 2011-04-11 2015-03-03 Varian Semiconductor Equipment Associates, Inc. Method for epitaxial layer overgrowth
WO2013090472A1 (en) * 2011-12-12 2013-06-20 Ritedia Corporation Process for annealing and devices made thereby
US20160265140A1 (en) * 2012-10-31 2016-09-15 Namiki Seimitsu Houseki Kabushiki Kaisha Single crystal substrate, manufacturing method for single crystal substrate, manufacturing method for single crystal substrate with multilayer film, and element manufacturing method
JP6220573B2 (ja) * 2013-06-18 2017-10-25 シャープ株式会社 窒化物半導体装置、エピタキシャルウェハの製造方法および電界効果トランジスタ
CN106847672A (zh) * 2017-03-03 2017-06-13 上海新傲科技股份有限公司 高击穿电压氮化镓功率材料的外延方法
FR3086097B1 (fr) 2018-09-18 2020-12-04 Commissariat Energie Atomique Procede de fabrication d'un dispositif electroluminescent

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509990A (en) 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
JPS59159563A (ja) * 1983-03-02 1984-09-10 Toshiba Corp 半導体装置の製造方法
JPH0766922B2 (ja) 1987-07-29 1995-07-19 株式会社村田製作所 半導体装置の製造方法
FR2661040A1 (fr) * 1990-04-13 1991-10-18 Thomson Csf Procede d'adaptation entre deux materiaux semiconducteurs cristallises, et dispositif semiconducteur.
JPH07106512A (ja) * 1993-10-04 1995-04-21 Sharp Corp 分子イオン注入を用いたｓｉｍｏｘ処理方法
US5589407A (en) * 1995-09-06 1996-12-31 Implanted Material Technology, Inc. Method of treating silicon to obtain thin, buried insulating layer
US5795813A (en) * 1996-05-31 1998-08-18 The United States Of America As Represented By The Secretary Of The Navy Radiation-hardening of SOI by ion implantation into the buried oxide layer
JP2856157B2 (ja) * 1996-07-16 1999-02-10 日本電気株式会社 半導体装置の製造方法
JP2976929B2 (ja) * 1997-05-30 1999-11-10 日本電気株式会社 半導体装置の製造方法
US5912481A (en) * 1997-09-29 1999-06-15 National Scientific Corp. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
US6120597A (en) * 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299254A (ja) * 2001-03-30 2002-10-11 Toyota Central Res & Dev Lab Inc 半導体基板の製造方法及び半導体素子
JP2005005723A (ja) * 2004-06-25 2005-01-06 Hitachi Cable Ltd 窒化物半導体エピタキシャルウェハの製造方法及び窒化物半導体エピタキシャルウェハ

Also Published As

Publication number Publication date
EP1014430A1 (en) 2000-06-28
US6211095B1 (en) 2001-04-03
US20010006852A1 (en) 2001-07-05
US6429466B2 (en) 2002-08-06

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