JP2000194142A - Pattern forming method and production of semiconductor device - Google Patents

Pattern forming method and production of semiconductor device

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Publication number
JP2000194142A
JP2000194142A JP37062998A JP37062998A JP2000194142A JP 2000194142 A JP2000194142 A JP 2000194142A JP 37062998 A JP37062998 A JP 37062998A JP 37062998 A JP37062998 A JP 37062998A JP 2000194142 A JP2000194142 A JP 2000194142A
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pattern
substrate
mold
step
material layer
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Tatsuya Usuki
達哉 臼杵
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Fujitsu Ltd
富士通株式会社
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Abstract

PROBLEM TO BE SOLVED: To provide a pattern forming method using an imprint method by which the compression pressure between the mold and a substrate can be reduced without accompanying changes in the substrate temperature, and to provide a producing method of a semiconductor device.
SOLUTION: This method includes a step to form a photocuring material layer 22 comprising a liquid photocuring material on a substrate 12, a step to press a mold 10 comprising a translucent material and having grooves of a predetermined pattern to one surface side to the substrate 12, and a step to irradiate the other face side of the mold 10 to cure the photocuring material layer 22 and to form a resist pattern having a pattern fitted to the pattern of the grooves 14, and a step to detach the mold 10 from the substrate 12.
COPYRIGHT: (C)2000,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、インプリント法を用いたパターン形成方法及び半導体装置の製造方法に関する。 The present invention relates to relates to a method of manufacturing a pattern forming method and a semiconductor device using the imprint technique.

【0002】 [0002]

【従来の技術】従来より、半導体装置の製造プロセスなど微細加工が要求されるパターンの形成には、光学的にパターンを転写する方法が用いられていた。 Conventionally, the formation of a pattern, such as microfabrication process of manufacturing a semiconductor device is required, a method of transferring an optically pattern has been used. 例えば、透明基板上の一部に不透明なパターンが描かれた光マスクを作成し、これをレジストを塗布した半導体基板上に直接的に或いは間接的に載せ、光マスクの背面から光を照射して光の透過部分のレジストを選択的に感光させることにより、光マスクのパターンを半導体基板上のレジストに転写することが行われていた。 For example, to create a light mask opaque pattern drawn on a portion of the transparent substrate, which resist directly or indirectly mounted on a semiconductor substrate coated with, irradiated with light from the back surface of the optical mask by selectively sensitizing a resist transmitting portion of the light Te, it has been performed to transfer the pattern of the photomask to the resist on the semiconductor substrate. また、現在の半導体装置の製造プロセスにおいては、光学的にマスクパターンを縮小して半導体基板上にパターンを転写する方法が主流となっている。 In the manufacturing process of the current semiconductor device, a method of transferring a pattern on a semiconductor substrate by reducing the optically mask pattern is the mainstream.

【0003】しかしながら、これらのパターン形成方法は、形成するパターンのサイズが露光する光の波長に大きく制限され、更に縮小投影露光の場合には、基板の水平方向のみならず垂直方向にも位置合わせ精度が要求されるため、装置のコストが高くなるという欠点があった。 However, these patterning methods are largely limited to the wavelength of light the size of a pattern to be formed is exposed, further reduction in the case of the projection exposure, the alignment to become not vertically horizontally only of the substrate since precision is required, there is a drawback that the cost of the apparatus is increased. このような背景から、SYChou等は、インプリント法と呼ばれる非常に簡易であるが大量生産に向き、従来の方法よりも格段に微細なパターンを転写しうる技術を提案している(例えば、Appl.Phys.Lett.,vol.67,p.331 Against this background, SYChou etc., although very simple, called imprinting suitable for mass production, has proposed a technique capable of transferring a much finer patterns than the conventional method (for example, Appl .Phys.Lett., vol.67, p.331
4 (1995)を参照)。 4 (1995)).

【0004】SYChou等が提案している従来のインプリント法について、図3を用いて説明する。 [0004] The conventional imprint methods SYChou etc. have proposed, it will be described with reference to FIG. まず、表面上にシリコン酸化膜104を形成したシリコン基板102 First, a silicon substrate 102 formed with the silicon oxide film 104 on the surface
を用意し、シリコン基板102上のシリコン酸化膜10 Was prepared, a silicon oxide film 10 on the silicon substrate 102
4を、転写すべきパターンの鏡像に対応する反転パターンに実寸で加工する。 4, processed in absolute size reversal pattern corresponding to a mirror image of the pattern to be transferred. シリコン酸化膜104のパターニングには、例えば、通常の電子ビームリソグラフィー技術を用いることができる。 The patterning of the silicon oxide film 104, for example, can be used ordinary electron beam lithography. こうして、その表面に転写すべきパターンの鏡像に対応する凹凸を有するモールド1 Thus, the mold 1 having a concavo-convex corresponding to the mirror image of the pattern to be transferred on the surface
00を形成する(図3(a))。 00 to form a (Figure 3 (a)).

【0005】次いで、パターンを形成しようとするシリコン基板110上に、PMMAなどのレジスト材料を塗布し、硬化させる。 [0005] Then, on the silicon substrate 110 to be patterned, applying a resist material such as PMMA, it is cured. こうして、シリコン基板110上にレジスト層112を形成する(図3(b))。 Thus, a resist layer 112 on the silicon substrate 110 (Figure 3 (b)). 次いで、 Then,
レジスト層112を形成したシリコン基板110を約2 The silicon substrate 110 to form a resist layer 112 of about 2
00℃程度に加熱し、レジスト層112を若干軟化させる。 Heated to about 00 ° C., thereby slightly soften the resist layer 112.

【0006】次いで、シリコン基板110のレジスト層112の塗布面側にモールド100の凹凸面側が対向するようにモールド100とシリコン基板110とを重ね合わせ、約140気圧程度の圧力で圧着する(図3 [0006] Then, the uneven surface side of the mold 100 on the coated surface side of the resist layer 112 of the silicon substrate 110 is superimposed the mold 100 and the silicon substrate 110 so as to face, crimped at a pressure of about 140 atm (3
(c))。 (C)). 次いで、モールド100をシリコン基板11 Then, the mold 100 silicon substrate 11
0に圧着した状態で温度を約105℃程度まで降温してレジスト層112を硬化させ、モールド100を脱着する。 0 to cure the resist layer 112 was lowered to a temperature of about 105 ° C. in crimped state, to desorb the mold 100. これにより、シリコン基板110上のレジスト層1 Thus, the resist layer 1 on the silicon substrate 110
12には、モールド100の凹凸パターンに対応する鏡像パターン、すなわちシリコン基板上に形成しようとするパターンを有するレジストパターン114が形成される(図3(d))。 The 12, mirror image pattern corresponding to the uneven pattern of the mold 100, i.e. the resist pattern 114 having a pattern to be formed on a silicon substrate is formed (FIG. 3 (d)).

【0007】こうして、インプリント法を用いたレジストパターンの形成が行われていた。 [0007] Thus, formation of a resist pattern using the imprint method has been carried out.

【0008】 [0008]

【発明が解決しようとする課題】しかしながら、上記従来のインプリント法を用いたパターン形成方法では、以下に示すような解決すべき課題があった。 [SUMMARY OF THE INVENTION However, in the pattern formation method using the conventional imprinting method described above, a problem to be solved as shown below. すなわち、上述のように、インプリント法を用いたパターン形成方法ではモールドと基板との圧着の際に約140気圧という極めて高い圧力を必要とするが、このような高い圧力を加えながらモールドと基板との間の水平方向の位置精度を維持することは極めて困難であった。 That is, as described above, requires a very high pressure of about 140 atmospheres during the crimping of the mold and the substrate in a pattern forming method using the imprint method, the mold and the substrate while applying such high pressures maintaining a horizontal position accuracy between the has been extremely difficult.

【0009】また、上述のパターン形成方法では、基板温度の昇温及び降温をおこなうことが不可欠であるため、基板温度の変化に伴う処理時間の増大が避けられなかった。 Further, in the above pattern formation method, since by performing the heating and cooling of the substrate temperature is indispensable, the increase in processing time accompanying changes in the substrate temperature can not be avoided. 本発明の目的は、インプリント法を用いたパターン形成方法において、モールドと基板との圧着圧力を低減でき、且つ、基板温度の変更を伴わないパターン形成方法、並びに、このようなパターン形成方法を用いた半導体装置の製造方法を提供することにある。 An object of the present invention is the pattern forming method using the imprint method, it is possible to reduce the compression pressure between the mold and the substrate, and a pattern forming method without changing the substrate temperature, as well, such a pattern forming method It is to provide a method of manufacturing a semiconductor device using.

【0010】 [0010]

【課題を解決するための手段】上記目的は、下地基板上に、液体状の光硬化性物質からなる光硬化性物質層を形成する工程と、光透過性の物質からなり、一方の面側に所定のパターンの溝が形成されたモールドを、前記一方の面側が前記下地基板の前記光硬化性物質層が形成された面側に対向するようにして、前記下地基板に圧着させる工程と、前記モールドの他方の面側から光を照射することにより前記光硬化性物質層を硬化し、前記光硬化性物質からなり、前記所定のパターンに嵌合するパターンを有するレジストパターンを形成する工程と、前記下地基板から前記モールドを脱着する工程とを有することを特徴とするパターン形成方法によって達成される。 Above object In order to achieve the above, on a base substrate, a step of forming a photocurable material layer formed of liquid photocurable substance, made of a light transmissive material, one side a step of a mold in which grooves are formed in a predetermined pattern, as the one surface side is opposed to the side where the photocurable material layer is formed of the base substrate, is crimped onto the underlying substrate, forming a resist pattern having a pattern by curing the photocurable material layer by irradiating the light from the other surface side of the mold, made from the photocurable material, is fitted to the predetermined pattern It is achieved by the pattern forming method characterized by a step of desorbing the mold from the underlying substrate.

【0011】また、上記のパターン形成方法において、 [0011] In the pattern formation method,
前記光硬化性物質層を硬化する工程の後、又は、前記モールドを脱着する工程の後に、前記下地基板の熱処理を行う工程を更に有するようにしてもよい。 After the step of curing the photocurable material layer, or, after the step of desorbing the mold, it may further have a step of performing heat treatment of the underlying substrate. また、上記目的は、下地基板上に、液体状の光硬化性物質からなる光硬化性物質層を形成する工程と、光透過性の物質からなり、一方の面側に所定のパターンの溝が形成されたモールドを、前記一方の面側が前記下地基板の前記光硬化性物質層が形成された面側に対向するようにして、前記下地基板に圧着させる工程と、前記モールドの他方の面側から光を照射することにより前記光硬化性物質層を硬化し、前記光硬化性物質からなり、前記所定のパターンに嵌合するパターンを有するレジストパターンを形成する工程と、前記下地基板から前記モールドを脱着する工程と、前記レジストパターンをマスクとして前記下地基板をエッチングする工程とを有することを特徴とする半導体装置の製造方法によっても達成される。 The above-described object is on a base substrate, a step of forming a photocurable material layer formed of liquid photocurable substance, made of a light transmissive material, the groove having a predetermined pattern on one surface side the formed mold, as the one surface side is opposed to the side where the photocurable material layer is formed of the base substrate, a step of bonding the base substrate, the other surface side of the mold curing the photocurable material layer by irradiation with light from, made from the photocurable material, and forming a resist pattern having a pattern that fits the predetermined pattern, the mold from the underlying substrate a step of desorbing the also achieved by a method of manufacturing a semiconductor device, wherein a resist pattern as a mask and a step of etching the underlying substrate.

【0012】 [0012]

【発明の実施の形態】本発明の一実施形態によるパターン形成方法及び半導体装置の製造方法について図1及び図2を用いて説明する。 Method for producing a pattern forming method and a semiconductor device according to an embodiment of the embodiment of the present invention will be described with reference to FIGS about. 図1及び図2は本実施形態によるパターン形成方法及び半導体装置の製造方法を示す工程断面図である。 1 and 2 are cross-sectional views showing a manufacturing method of the pattern forming method and a semiconductor device according to the present embodiment. まず、モールドの基材として、光透過性を有する材料からなる基板12を用意する(図1 First, as the base material of the mold, a substrate 12 made of a material having optical transparency (Fig. 1
(a))。 (A)). 例えば、石英基板やパイレックス基板などの基板は、紫外線領域までの光に対して光透過性を有するとともに、半導体装置の製造プロセスに対する適用性にも優れており、本実施形態によるパターン形成方法を半導体装置の製造方法に適用するうえで好適である。 For example, a substrate such as a quartz substrate or a Pyrex substrate, a semiconductor which has an optical transparency to light up the UV region, is excellent in applicability to a semiconductor device manufacturing process, a pattern forming method according to the present embodiment it is preferable for application to the manufacturing method of the device. 但し、基板材料は石英やパイレックスに限定されるものではなく、光透過性を有する他の基板であっても同様に適用することができる。 However, the substrate material is not limited to quartz or Pyrex can also be another substrate having optical transparency similarly applied to.

【0013】次いで、基板12の表面を、転写すべきパターンの鏡像に対応する反転パターンに実寸で加工する。 [0013] Then, the surface of the substrate 12 is processed to scale the inversion pattern corresponding to the mirror image of the pattern to be transferred. この加工は、基板12の表面に、上記パターンに対応する溝14を形成するものであり、例えば、通常の電子ビームリソグラフィーなどの技術を用いることができる。 This process comprises a substrate 12, which forms a groove 14 corresponding to the pattern, for example, can be used techniques such as conventional electron beam lithography. こうして、その表面に転写すべきパターンの鏡像に対応する凹凸を有するモールド10を形成する(図1 Thus, to form a mold 10 having a concave-convex corresponding to the mirror image of the pattern to be transferred on its surface (Fig. 1
(b))。 (B)). なお、モールド(mold)とは一般に鋳型や押型を意味する語であり、本明細書にいうモールドは、パターンを形成しようとする基板上に所定のレジストパターンを形成するための押型に相当する。 Incidentally, a term generally refers to a template or mold-pressing the mold (mold), mold in the present specification, corresponds to the embossing die to form a predetermined resist pattern on a substrate to be patterned.

【0014】次いで、パターンを形成しようとする基板20の表面に、室温において液体状である光硬化性物質を塗布する。 [0014] Then, the surface of the substrate 20 to be patterned, applying a photocurable substance is a liquid at room temperature. こうして、基板20上に、光硬化性物質よりなる光硬化性物質層22を形成する(図1(c))。 Thus, on the substrate 20, to form a photocurable material layer 22 made of photocurable material (FIG. 1 (c)).
なお、室温において液体状である光硬化性物質は、モールド10を透過しうる波長の光の照射によって硬化する物質中から選択する。 The light curable material is a liquid at room temperature, chosen from substance which is cured by irradiation with light of a wavelength capable of passing through the mold 10. 例えば、フォトポリマーやネガ型レジストなどの光硬化性樹脂を適用することができる。 For example, it is possible to apply a photocurable resin such as a photo polymer or a negative resist.
光硬化性物質は、レジストとしての耐性(例えば、エッチング耐性)、基板20との密着性、モールド10に対する剥離容易性などの特性を考慮したうえで、使用目的、モールド10や基板20の材料などに応じて適宜選択することが望ましい。 Photocurable material, resistance as a resist (e.g., etching resistance), adhesion to the substrate 20, in consideration of the properties such as peel easily against the mold 10, the intended use, such as the material of the mold 10 and substrate 20 it is desirable to appropriately selected depending on the.

【0015】また、基板20は、素子が何ら形成されていないベアの半導体基板であってもよいし、所定の素子が既に形成されている半導体基板であってもよい。 [0015] The substrate 20 may be a semiconductor substrate of a bare which elements are not formed at all, or may be a semiconductor substrate in which a predetermined element is already formed. また、半導体基板以外の基板であってもよい。 Further, it may be a substrate other than a semiconductor substrate. 本明細書では、これら基板を総称して下地基板としても表すこととする。 In this specification, it is assumed that these are collectively substrate expressed as a starting substrate. 次いで、基板20の光硬化性物質層22を形成した面側にモールド10の凹凸面側が対向するようにモールド10と基板20とを重ね合わせ(図1(d))、モールド10と基板20とを圧着する。 Then, overlay the mold 10 and the substrate 20 as the uneven surface side of the mold 10 on the side forming the photocurable material layer 22 of the substrate 20 are opposed (Fig 1 (d)), the mold 10 and the substrate 20 the crimping. これにより、液体状の光硬化性物質層22はモールド10の表面に形成された凹凸パターンに従って流動し、この結果、光硬化性物質層22は、モールド10の表面に形成された凹凸パターンに嵌合する凹凸パターン、すなわち、基板20上に転写すべきパターンに保たれる(図2(a))。 Thus, liquid photocurable material layer 22 to flow in accordance with the concavo-convex pattern formed on the surface of the mold 10, as a result, the photocurable material layer 22 is fitted to the concavo-convex pattern formed on the surface of the mold 10 convex pattern to focus, i.e., kept to a pattern to be transferred onto the substrate 20 (FIG. 2 (a)).

【0016】なお、光硬化性物質層22は液体状であるため、モールド10と基板20との圧着に必要とされる圧力は数気圧程度で足りる。 [0016] Since the photocurable material layer 22 is liquid, the pressure required for compression between the mold 10 and the substrate 20 is sufficient for about several atm. また、モールド10を光硬化性物質層22に接触させた後であっても比較的容易にモールド10を水平方向に移動することができる。 Further, it is possible to move the mold 10 relatively easily mold 10 even after the contact with the photocurable material layer 22 in the horizontal direction. したがって、基板20に対するモールド10の位置合わせが容易となる。 Therefore, it becomes easy positioning of the mold 10 to the substrate 20.

【0017】次いで、モールド10と基板20とを圧着した状態で、モールド10の裏面側から光(例えば紫外線)を照射し、光硬化性物質層22を硬化させる(図2 [0017] Then, in a state of compression between the mold 10 and the substrate 20 is irradiated with light (e.g., ultraviolet) from the back side of the mold 10, thereby curing the photocurable material layer 22 (FIG. 2
(b))。 (B)). これにより、光硬化性物質層22は、モールド10の表面に形成された凹凸パターンに嵌合する凹凸パターン、すなわち、基板20上に転写すべきパターンを有する状態で硬化される(以下、硬化した光硬化性物質層22を、光硬化性物質層24として表す)。 Thus, the photocurable material layer 22 is uneven pattern that fits to the uneven pattern formed on the surface of the mold 10, i.e., is cured in a state having a pattern to be transferred onto the substrate 20 (hereinafter, cured the photocurable material layer 22, represented as a photocurable material layer 24). なお、 It should be noted that,
照射する光は、この光によって光硬化性物質層22を硬化すれば足りるので、通常の光リソグラフィーに用いられるような波長単一性を有している光や点光源を適用する必要はなく、通常のランプ光を用いることができる。 Light to be irradiated, this because it is sufficient to cure the photocurable material layer 22 by light, it is not necessary to apply a light or point light source wavelength has a unity, such as those used in conventional photolithography, it can be used an ordinary lamp light.

【0018】次いで、モールド10を基板20から脱着する。 [0018] Then, to desorb the mold 10 from the substrate 20. この際、光硬化性物質層24は硬化されているので、光硬化性物質層24は、モールド10が圧着されていたときの状態に維持される(図2(c))。 At this time, since the photocurable material layer 24 is cured, the photocurable material layer 24 is maintained in a state when the mold 10 has been crimped (Figure 2 (c)). なお、光硬化性物質によっては、光照射のみでは光硬化性物質層24の十分な硬化ができないことも考えられる。 Depending photocurable substance is also conceivable that only the light irradiation can not sufficient curing of the photocurable material layer 24. このような場合には、モールド10を圧着した状態で、或いは、モールド10を脱着した直後に所定の熱処理を行い、光硬化性物質層24を十分に硬化すればよい。 In such a case, while crimping the mold 10, or performs a predetermined heat treatment immediately after desorption the mold 10, the photocurable material layer 24 may be fully cured.

【0019】次いで、必要に応じて、基板20の表面全体の光硬化性物質層24を僅かにエッチングし、光硬化性物質層24が残存すべきでない領域に薄く残存する光硬化性物質層24を除去する。 [0019] Then, if necessary, slightly etched entire photocurable material layer 24 surface of the substrate 20, the photocurable material layer remains thin region photocurable material layer 24 should not be left 24 It is removed. これにより、基板20上には、光硬化性物質層24よりなるレジストパターン2 Thus, on the substrate 20, the resist pattern 2 made of the photocurable material layer 24
6が形成される(図2(d))。 6 is formed (Figure 2 (d)).

【0020】次いで、このように形成したレジストパターン26をマスクとして、基板20対して所定の処理を行う。 [0020] Then, the resist pattern 26 thus formed as a mask, a predetermined process for the substrate 20. 例えば、レジストパターン26をマスクとして基板20をエッチングし、或いは、レジストパターン26 For example, the substrate 20 is etched using the resist pattern 26 as a mask, or the resist pattern 26
をマスクとして基板20にイオン注入を行うなどの処理を施すことができる。 It can be subjected to processing such as ion implantation into the substrate 20 as a mask. このように、本実施形態によれば、インプリント法を用いたパターン形成方法において液体状の光硬化性物質を用いるので、従来のパターン形成方法と比較して、モールドと基板との圧着圧力を大幅に低減することができる。 Thus, according to this embodiment, since using a liquid photocurable substance in the pattern forming method using the imprint method, as compared with the conventional pattern forming method, a compression pressure between the mold and the substrate it can be greatly reduced. また、モールドを構成する材料として光透過性を有する基板を適用するので、パターンを形成するための材料として光硬化性物質を適用することができる。 Furthermore, since applying a substrate having a light transmitting property as the material constituting the mold, it is possible to apply the photocurable substance as the material for forming the pattern. これにより、パターン形成に伴う基板温度の変化が不要となるので、処理時間を短縮することができる。 Thus, the change of the substrate temperature due to the pattern formation is not required, it is possible to shorten the processing time.

【0021】 [0021]

【発明の効果】以上の通り、本発明によれば、下地基板上に、液体状の光硬化性物質からなる光硬化性物質層を形成する工程と、光透過性の物質からなり、一方の面側に所定のパターンの溝が形成されたモールドを、一方の面側が下地基板の光硬化性物質層が形成された面側に対向するようにして、下地基板に圧着させる工程と、モールドの他方の面側から光を照射することにより光硬化性物質層を硬化し、光硬化性物質からなり、所定のパターンに嵌合するパターンを有するレジストパターンを形成する工程と、下地基板からモールドを脱着する工程とによりレジストパターンを形成するので、従来のパターン形成方法と比較して、モールドと基板との圧着圧力を大幅に低減することができる。 As described above, according to the present invention, according to the present invention, on a base substrate, a step of forming a photocurable material layer formed of liquid photocurable substance, made of a light transmissive material, the one the mold in which grooves are formed in a predetermined pattern on the side, as one side is opposed to the side where the photocurable material layer is formed of a base substrate, a step of bonding the base substrate, the mold curing the photocurable material layer by irradiating the light from the other surface side and a photocurable substance, and forming a resist pattern having a pattern that fits in a predetermined pattern, a mold from the starting substrate since a resist pattern is formed by the steps of desorbing, as compared with the conventional pattern forming method, a compression pressure between the mold and the substrate can be greatly reduced. また、モールドを構成する材料として光透過性を有する基板を適用するので、パターンを形成するための材料として光硬化性物質を適用することができる。 Furthermore, since applying a substrate having a light transmitting property as the material constituting the mold, it is possible to apply the photocurable substance as the material for forming the pattern. これにより、パターン形成に伴う基板温度の変化が不要となるので、処理時間を短縮することができる。 Thus, the change of the substrate temperature due to the pattern formation is not required, it is possible to shorten the processing time.

【0022】したがって、本発明によるパターン形成方法を適用することにより、製造装置への投資を削減でき、また、製造工程を簡便にすることができる。 [0022] Thus, by applying the pattern forming method according to the present invention can reduce the investments in production equipment, also can be simplified manufacturing process.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の一実施形態によるパターン形成方法及び半導体装置の製造方法を示す工程断面図(その1)である。 Is a [1] cross-sectional views showing a manufacturing method of a pattern forming method and a semiconductor device according to an embodiment of the present invention (Part 1).

【図2】本発明の一実施形態によるパターン形成方法及び半導体装置の製造方法を示す工程断面図(その2)である。 Is a [2] process sectional views showing a manufacturing method of the pattern forming method and a semiconductor device according to an embodiment of the present invention (Part 2).

【図3】従来のパターン形成方法を示す工程断面図である。 3 is a process sectional view showing a conventional pattern formation method.

【符号の説明】 DESCRIPTION OF SYMBOLS

10…モールド 12…基板 14…溝 20…基板 22…光硬化性物質層(硬化前) 24…光硬化性物質層(硬化後) 26…レジストパターン 100…モールド 102…シリコン基板 104…シリコン酸化膜 110…シリコン基板 112…レジスト層 114…レジストパターン 10 ... mold 12 ... substrate 14 ... groove 20 ... substrate 22 ... photocurable material layer (before curing) 24 ... photocurable material layer (cured) 26 ... resist pattern 100 ... mold 102 ... silicon substrate 104 ... silicon oxide film 110 ... silicon substrate 112 ... resist layer 114 ... resist pattern

Claims (3)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 下地基板上に、液体状の光硬化性物質からなる光硬化性物質層を形成する工程と、 光透過性の物質からなり、一方の面側に所定のパターンの溝が形成されたモールドを、前記一方の面側が前記下地基板の前記光硬化性物質層が形成された面側に対向するようにして、前記下地基板に圧着させる工程と、 前記モールドの他方の面側から光を照射することにより前記光硬化性物質層を硬化し、前記光硬化性物質からなり、前記所定のパターンに嵌合するパターンを有するレジストパターンを形成する工程と、 前記下地基板から前記モールドを脱着する工程とを有することを特徴とするパターン形成方法。 To 1. A base substrate, a step of forming a photocurable material layer formed of liquid photocurable substance, made of a light transmissive material, the groove having a predetermined pattern on one surface side forming the has been molded, said as one side faces the side where the photocurable material layer is formed of the base substrate, a step of bonding the base substrate, from the other surface side of the mold curing the photocurable material layer by irradiation with light, made from the photocurable material, and forming a resist pattern having a pattern to be fitted to the predetermined pattern, the mold from the underlying substrate pattern forming method characterized by a step of desorption.
  2. 【請求項2】 請求項1記載のパターン形成方法において、 前記光硬化性物質層を硬化する工程の後、又は、前記モールドを脱着する工程の後に、前記下地基板の熱処理を行う工程を更に有することを特徴とするパターン形成方法。 2. A pattern forming method according to claim 1, wherein, after the step of curing the photocurable material layer, or, after the step of desorbing the mold, further comprising a step of performing heat treatment of the underlying substrate pattern forming method, wherein a.
  3. 【請求項3】 下地基板上に、液体状の光硬化性物質からなる光硬化性物質層を形成する工程と、 光透過性の物質からなり、一方の面側に所定のパターンの溝が形成されたモールドを、前記一方の面側が前記下地基板の前記光硬化性物質層が形成された面側に対向するようにして、前記下地基板に圧着させる工程と、 前記モールドの他方の面側から光を照射することにより前記光硬化性物質層を硬化し、前記光硬化性物質からなり、前記所定のパターンに嵌合するパターンを有するレジストパターンを形成する工程と、 前記下地基板から前記モールドを脱着する工程と、 前記レジストパターンをマスクとして前記下地基板をエッチングする工程とを有することを特徴とする半導体装置の製造方法。 To 3. A base substrate, a step of forming a photocurable material layer formed of liquid photocurable substance, made of a light transmissive material, the groove having a predetermined pattern on one surface side forming the has been molded, said as one side faces the side where the photocurable material layer is formed of the base substrate, a step of bonding the base substrate, from the other surface side of the mold curing the photocurable material layer by irradiation with light, made from the photocurable material, and forming a resist pattern having a pattern to be fitted to the predetermined pattern, the mold from the underlying substrate a step of desorption, a method of manufacturing a semiconductor device characterized by a step of etching the underlying substrate using the resist pattern as a mask.
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