JP2011162870A - Method of manufacturing porous structure material - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method capable of using a rugged pattern formed according to an imprinting process as a mask for controlling a micropore production initiating position when performing micropore formation onto substrate material such as aluminum and silicon according to an electrochemical process and, thereby, efficiently and reliably forming a regular hole array structure. <P>SOLUTION: The method of manufacturing a porous structure material in which a micropore array is controlled is characterized in that a rugged pattern is formed on the mask disposed on a substrate according to an imprinting process and the micropore formation is performed according to an electrochemical method on the substrate position corresponding to recessed parts of the formed rugged pattern. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a porous structural material, and more particularly to a method for manufacturing a porous structural material using a mask for controlling the pore formation start position.

  A hole array structure material in which nanoscale pores are regularly arranged is a functional material that can be expected to be applied in various fields. In order to fabricate the regular hole array structure, various methods have been studied including a lithography technique and a microfabrication technique using dry etching. Arbitrary pore arrangement patterns can be formed based on lithography technology, but dry etching used when processing a substrate using this as a mask forms pores with a high aspect ratio due to process characteristics. However, it is difficult to form a high aspect ratio hole array structure.

  On the other hand, if it is based on an electrochemical method such as anodic oxidation or electrolytic etching, it has a feature that high aspect ratio pores can be formed on the surface of electrodes such as silicon and aluminum. Normally, the pores formed by these methods have a random arrangement, but by forming a depression pattern that functions as a starting point for pore generation on the substrate surface in advance, It has become clear that a hole array structure with an aspect ratio can also be formed (for example, Patent Document 1). However, the control method of the pore generation position reported so far is a method of directly texturing the surface of the base material using a hard mold such as silicon carbide or nickel, and the mold is pressed against the base material. In some cases, a high pressure is required. Therefore, there is a problem that there is a limit to increasing the area in pattern formation by the direct texturing method. It is possible to enlarge the pattern area by texturing the substrate multiple times while shifting the position using a small mold, but in this method, joints are formed between patterns. Therefore, a hole array structure having a seamless regular pore arrangement cannot be obtained.

  The nanoimprint method capable of forming a fine pattern on the surface of the base material has a feature that, in addition to being able to collectively transfer the concavo-convex structure of the mold to be used, it is possible to increase the area. In particular, it is promising as a technique for forming a nanoscale mask with high throughput. Hitherto, substrate processing using a nanoimprint method has been studied as a substitute for various lithography techniques. However, in many cases, the mask is formed by nanoimprinting and then the substrate is processed by dry etching in the same way as the conventional microfabrication process. Examples of applying electrochemical processes to pore formation have been reported. Absent.

JP 2008-045170 A

  Therefore, an object of the present invention is to use a concavo-convex pattern formed by a nanoimprint process, and to use the concavo-convex pattern as a pore generation start position when pore formation is performed on a base material such as aluminum or silicon by an electrochemical process. It is an object of the present invention to provide a technique that allows a regular hole array structure to be efficiently and reliably formed on a substrate by using it as a mask for performing control.

  In order to solve the above-mentioned problems, the present invention has been made as a result of intensive studies on a method for pattern formation by an imprint process and pore formation by an electrochemical process using the pattern as a mask. That is, the present invention forms a concavo-convex pattern on a mask provided on a base material by an imprint process, and forms pores by an electrochemical method at a base material position corresponding to the concave portion of the formed concavo-convex pattern. The present invention provides a method for producing a porous structural material with controlled pore arrangement.

  As the mask material, any material can be used as long as it can form a fine uneven pattern by an imprint process, such as a polymer material or an inorganic material. By processing the base material by an electrochemical method at a position corresponding to the concave portion of the fine concavo-convex pattern formed on the mask, it becomes possible to start the formation of pores at a desired position with high accuracy. A regular hole array structure can be formed efficiently and reliably.

  As the concavo-convex pattern to be used, various concavo-convex patterns such as a line and space structure can be applied. However, in order to precisely control the position where the pores are generated, it is desirable to form a concavo-convex pattern having a hole array structure. The pattern formed on the mask on the substrate can be removed by, for example, ion milling, an excimer lamp, or an organic solvent as post-processing after pore formation is performed on the substrate by an electrochemical process. In addition, if the concave / convex pattern is formed on the base material in advance by dry etching or chemical etching using the fine uneven pattern formed by the imprint process as a mask, the mask material is formed before performing pore formation by the electrochemical process. Can also be removed.

  As the electrochemical substrate processing method, an anodic oxidation method or electrolytic etching method can be used. In the anodic oxidation method, a porous film made of an oxide can be obtained on the electrode surface by electrolysis in an acid or alkaline electrolyte using a metal such as aluminum, titanium, tantalum, niobium or magnesium as an anode. Further, the electrolytic etching method is a method in which a material such as aluminum or silicon is dissolved while being electrolyzed. In the electrolytic etching method, a porous structure can be formed on the electrode surface.

  In addition, when forming a concavo-convex pattern on a mask provided on the surface of a substrate by an imprint process, a thermal imprint process using a thermoplastic material for the mask can be used, but a photocurable resin is used for the mask. By applying the optical imprint process, the pattern can be formed with high efficiency. In the present invention, a concavo-convex mask pattern is formed on the surface of a base material that forms a porous structure. However, since many of these base materials are opaque, light irradiation is performed from the mold side when performing photoimprinting. There is a need. For this reason, the mold to be used needs to be a light transmissive mold. Various molds including a quartz mold widely used as a light imprint mold can be applied to the light transmissive mold, but a resin mold can also be used. When optical imprinting is performed using a mold formed of a resin material in this manner, mold release becomes a problem because the affinity between the mold and the photocurable resin layer is high. In this case, the method of modifying the mold surface with a mold release agent is effective. However, mold release agents such as “OPTOOL” (manufactured by Daikin Industries) currently used as mold release agents for nanoimprinting are available. Usually, since it is immobilized by a silane coupling reaction with a hydroxyl group on the surface of the substrate, it is difficult to chemically immobilize the resin surface that does not have many hydroxyl groups. In such a case, the release agent adheres to the mold surface by physical adsorption, and a sufficient release effect cannot be obtained during the imprint process. Therefore, if a metal thin film or a metal oxide thin film is formed on the surface of the resin mold to be used, the outermost surface of the mold can be replaced with those materials, and the mold release agent can be chemically fixed. It becomes possible. A sputtering method, a vapor deposition method, a sol-gel method, or the like can be used for forming a metal or metal oxide thin film. If the thickness of the thin film layer to be formed is 5 nm or more, a superior effect can be obtained when surface modification with a release agent is performed.

  The imprint mold can be produced by various lithography techniques such as electron beam lithography and photolithography, but a technique of producing anodized porous alumina as a starting material can also be used. Anodized porous alumina is known to have pores that are self-organized and regularly arranged when anodized under appropriate conditions. As a result, it is possible to obtain a seamless large-area mold. For the production of a mold using anodized porous alumina, an imprint method can be used in addition to the mold method. In the mold method, it is necessary to dissolve and remove the mold in order to obtain the produced transcript. However, according to the imprint method, multiple transfer structures can be obtained from one anodized alumina mold. Excellent in terms of sex.

The present invention is characterized in that a concavo-convex pattern is formed on a mask provided on a base material by a nanoimprint process, and pores are electrochemically formed in the base material portion corresponding to the concave portion. Normally, the uneven pattern formed by the imprint process leaves a thin mask layer called a residual film layer on the mask base material even in the concave part, so that dry etching or the like is used to expose the base material on which pores are to be formed. The method is used. Also in the present invention, after forming the uneven pattern by the nanoimprint process, the mask residual film layer is removed by a technique such as dry etching, excimer lamp treatment, UV ozone treatment, or the like. After exposing the portion of the base material corresponding to the recess, pores can be formed in the base material by an electrochemical method. In addition to this, when the remaining film layer is sufficiently thin as 20 nm or less, it is possible to form pores corresponding to the pattern recesses without performing the remaining film removal operation. In order to form the concave portion of the concave / convex pattern formed on the mask to an appropriate depth, it is preferable that the mold pressing pressure at the time of forming the concave / convex pattern is 10 kg / cm ² or more. In particular, when it is desired to make the residual film layer as described above sufficiently thin, it is desirable to set the mold pressing pressure above a certain value. Furthermore, when a plastically deformable material such as aluminum is used for the substrate to be imprinted, the mold protrudes from the mold through the mask and the tip of the mold protrudes into the substrate. It is possible to perform pore formation by an electrochemical process using the depression as a starting point for pore generation. For example, by performing optical imprinting while pressing the mold, the mold protrusion can be applied to the base material and a hole array mask pattern penetrating can be obtained. In such a case, not only the mask penetrates but also a depression pattern can be formed on the surface of the base material, so that the position where the pores are generated can be controlled to a higher degree.

  Further, if the hole opening diameter of the hole array pattern formed by imprinting is large, a plurality of pores may be formed for one recess. Therefore, it is desirable to reduce the hole diameter in order to precisely control the position of the pores formed by the electrochemical process. In this case, the hole size is desirably 50% or less of the period. In order to form a hole with a small opening diameter by nanoimprinting, it is necessary to use a mold with thin pillars arranged on the surface. However, when the pillar diameter is narrow, it becomes difficult to maintain the upright structure of each pillar, and the hole has a high aspect ratio. There is a problem that it becomes difficult to form an array. In addition, the pillar is bent by the pressure at the time of imprinting, resulting in problems such as disordered arrangement. In order to solve such problems, it is desirable to use a tapered pillar array. The tapered pillar structure is effective as a mold for forming a hole having a small opening diameter while maintaining the strength because the pillar has a thick bottom and a thin tip.

  According to the present invention, first, a predetermined concavo-convex pattern is formed on the mask provided on the base material by an imprint process, and the substrate position corresponding to the concave portion of the formed concavo-convex pattern is refined by an electrochemical method. Since the pores are formed, it is possible to efficiently produce a porous structure material in which the pore arrangement is reliably controlled in a form conforming to the form of the imprint mold.

It is a schematic diagram which shows an example of the basic form of the manufacturing method of the porous structure material which concerns on this invention. It is the schematic diagram which illustrated one Embodiment of the manufacturing method of the porous structure material which concerns on this invention. It is the schematic diagram which illustrated another embodiment of the manufacturing method of the porous structure material which concerns on this invention. It is the schematic diagram which illustrated another embodiment of the manufacturing method of the porous structure material which concerns on this invention. It is the schematic diagram which illustrated another embodiment of the manufacturing method of the porous structure material which concerns on this invention. It is the schematic diagram which illustrated another embodiment of the manufacturing method of the porous structure material which concerns on this invention. It is the schematic diagram which illustrated another embodiment of the manufacturing method of the porous structure material which concerns on this invention. It is the schematic diagram which illustrated another embodiment of the manufacturing method of the porous structure material which concerns on this invention. It is the schematic diagram which illustrated another embodiment of the manufacturing method of the porous structure material which concerns on this invention. It is a figure which shows the result of having observed the cross section of the porous structural material which consists of anodized porous alumina obtained in Example 2 with the electron microscope. It is a figure which shows the result of having observed the surface of the porous structure material which consists of anodized porous alumina obtained in Example 3 with the electron microscope. It is a figure which shows the result of having observed the surface of the porous structure material which consists of porous silicon obtained in Example 5 with the electron microscope.

Embodiments of a method for producing a porous structural material according to the present invention will be described below in detail with reference to the drawings.
FIG. 1 schematically shows an example of a method for producing a porous structural material according to the present invention, in which an uneven pattern is formed by an imprint process and pores are formed by an electrochemical process. In FIG. 1, an uneven pattern 4 having a hole array structure is formed on a mask 2 provided on a substrate 1 by an imprint process using a mold 3 having a pillar array structure. Pore formation by an electrochemical process is performed at the position of the base material 1 corresponding to the concave portion 5 of the formed concavo-convex pattern 4, and the pores 6 extending from the base material surface in the base material thickness direction have a predetermined arrangement form. Thus, the porous structural material 7 controlled in the above manner is produced.

  In the process shown in FIG. 2, a concavo-convex pattern 4 is formed on the mask 2 provided on the base material 1 by an imprint process using the mold 3, and the base material 1 corresponding to the concave portion 5 of the concavo-convex pattern 4 is formed. By performing anodic oxidation, a porous oxide film 9 in which the pores 8 formed on the surface side of the substrate 1 are controlled in a predetermined arrangement form is formed, and then the porous film formed on the substrate 1 is formed. The mask 2 is removed from the oxide film 9, and the porous structure material 10 in which the pore arrangement is controlled is produced.

  In the process shown in FIG. 3, the concavo-convex pattern 4 is formed by the imprint process using the mold 3 on the mask 2 provided on the base material 1, and the base material 1 corresponding to the concave portion 5 of the concavo-convex pattern 4 is formed. Electrolytic etching is performed to form the pores 11 controlled in a predetermined arrangement form, and then the mask 2 is removed from the substrate 1 to produce a porous structural material 12 with controlled pore arrangement. Is done.

  In the process shown in FIG. 4, a layer 21 made of a photocurable material is provided on the substrate 1, a transparent mold 22 is pressed against the photocurable material layer 21, and light 23 having a predetermined wavelength is irradiated. After the photoimprint process is performed and the photocurable material layer 21 is cured, the transparent mold 22 is removed, thereby forming a mask 25 in which a concavo-convex pattern 24 having a predetermined shape is formed on the substrate 1. By the electrolytic chemical process, pores 27 controlled to a predetermined arrangement form are formed on the portion of the base material 1 corresponding to the concave portion 26 of the concavo-convex pattern 24, and then the mask 25 is removed from the base material 1 so that the pores A porous structural material 28 having a controlled arrangement is produced.

  In the process shown in FIG. 5, a mold 34 is produced by transferring the structure of the concavo-convex pattern 32 of the anodized porous alumina 31 to the mold forming material 33, and is applied onto the substrate 1 by an imprint process using the produced mold 34. A mask 36 on which a concavo-convex pattern 35 having a predetermined shape is formed is formed, and pores 38 controlled to have a predetermined arrangement form are formed on the portion of the base material 1 corresponding to the concave portion 37 of the concavo-convex pattern 35 by an electrolytic chemical process. Thereafter, the mask 36 is removed from the base material 1 to produce a porous structural material 39 in which the pore arrangement is controlled.

  In the process shown in FIG. 6, the pillar array 42 of the transparent resin mold 41 is coated with a metal or metal oxide thin film 43, and the transparent resin mold 41 is used to form the substrate 1 on the substrate 1 in the same manner as shown in FIG. After the transparent resin mold 41 is pressed against the photocurable material layer 44 provided on the substrate, and the photoimprint process is executed by irradiating the light 45 having a predetermined wavelength, and the photocurable material layer 44 is cured. By removing the transparent resin mold 41, a mask 47 in which a concavo-convex pattern 46 having a predetermined shape is formed on the base material 1, and an electrolytic chemical process is performed on the base material 1 corresponding to the concave portion 48 of the concavo-convex pattern 46. As a result, the pores 27 controlled in a predetermined arrangement form are formed. Thereafter, if the mask 47 is removed from the substrate 1, a porous structure material with controlled pore arrangement can be obtained.

  In the process shown in FIG. 7, a mask 54 in which a concavo-convex pattern 53 having a predetermined shape is formed on a substrate 1 using a tapered pillar array mold 52 having a tapered pillar 51, and a concave portion of the concavo-convex pattern 53 is formed. By the electrolytic chemical process, pores 56 having a small opening diameter that are controlled in a predetermined arrangement form are formed on the portion of the base material 1 corresponding to 55. Thereafter, if the mask 54 is removed from the substrate 1, a porous structure material in which the arrangement form of the pores 56 having small opening diameters is controlled can be obtained.

  In the process shown in FIG. 8, a mask 63 in which a concavo-convex pattern 62 having a predetermined shape is formed on the base material 1 using the mold 61, and the base material 1 corresponding to the concave portion 64 of the concavo-convex pattern 62 is formed at this stage. By performing dry etching or chemical etching on the portion, a recess 65 is formed in a predetermined pattern on the substrate 1, and a pore 66 is formed by an electrochemical process starting from the recess 65 of the predetermined pattern. Thus, a porous structural material 67 in which the arrangement form is controlled is obtained.

  In the process shown in FIG. 9, compared to the process shown in FIG. 8, when the uneven pattern 62 having a predetermined shape is formed on the substrate 1 using the mold 61, the mold is applied to the mask forming layer 71 on the substrate 1. 61 is pressed until the protrusion 72 of the mold 61 penetrates the mask forming layer 71 and the tip of the protrusion 72 plastically deforms the base material 1 to form a recess 73 on the surface of the base material 1. When the mold 61 is removed, a recess 74 is formed in the mask 74 having a through hole and the base material 1 corresponding to the through hole. After the mask 74 is removed, the recess 73 having the predetermined pattern is used as a starting point by an electrochemical process. The porous structure material 76 in which the pores 75 are formed and the arrangement form of the pores 75 is controlled is obtained.

Example 1 [Production of ideally aligned anodized porous alumina having a pore period of 500 nm]
Using a porous alumina having tapered pores with a pore period of 500 nm and a pore depth of 1.3 μm as an imprint mold, structure transfer was performed on a photocurable resin to form a tapered polymer pillar array. Ni was sputtered on the surface of this polymer pillar array to a thickness of 10 nm, and immersed in a 0.1 wt% optool solution (manufactured by Daikin Industries) to obtain a resin transparent mold. A polymer hole array was formed by an optical imprint process using a resin transparent mold using an Al plate as a base material. For photoimprinting, a photo-curing resin (PAK-02, manufactured by Toyo Gosei Kogyo Co., Ltd.) was used, and a method of irradiating light while pressing a resin transparent mold under a pressure of 100 kg / cm ² was used. As a result, a polymer hole array mask was formed on the surface of the Al plate. Thereafter, etching was performed for 30 minutes from the vertical direction of the sample by Ar ion milling to remove the remaining film layer and to form a recess pattern on the surface of the Al plate. The polymer mask on the surface of the sample subjected to ion milling was removed by irradiation with an excimer lamp for 1 hour. After removing the mask, the Al plate is anodized for 5 minutes at a 0.1M phosphoric acid aqueous solution, a bath temperature of 0 ° C., and a formation voltage of 200 V to obtain a porous structure material made of anodized porous alumina with regularly arranged pores. It was.

Example 2 [Production of ideally aligned anodized porous alumina having a pore period of 500 nm]
Using a porous alumina having tapered pores with a pore period of 500 nm and a pore depth of 1.3 μm as an imprint mold, structure transfer was performed on a photocurable resin to form a tapered polymer pillar array. Ni was sputtered on the surface of this polymer pillar array to a thickness of 10 nm, and immersed in a 0.1 wt% optool solution (manufactured by Daikin Industries) to obtain a resin transparent mold. A polymer hole array was formed by an optical imprint process using a resin transparent mold using an Al plate as a base material. For photoimprinting, a photo-curing resin (PAK-02, manufactured by Toyo Gosei Kogyo Co., Ltd.) was used, and a method of irradiating light while pressing a resin transparent mold under a pressure of 100 kg / cm ² was used. As a result, a polymer hole array mask was formed on the surface of the Al plate. A porous structural material made of anodized porous alumina with regularly arranged pores is obtained by anodizing the aluminum plate on which the mask is formed for 5 minutes at a 0.1 M phosphoric acid aqueous solution, a bath temperature of 0 ° C., and a formation voltage of 200 V. It was. The result of observing the cross section of the obtained anodized porous alumina with an electron microscope is shown in FIG.

Example 3 [Production of ideally aligned anodized porous alumina having a pore period of 200 nm]
Using a porous alumina having tapered pores with a pore period of 200 nm and a pore depth of 700 nm as an imprint mold, the structure was transferred to a photocurable resin to form a tapered polymer pillar array. Ni was sputtered on the surface of this polymer pillar array to a thickness of 10 nm, and immersed in a 0.1 wt% optool solution (manufactured by Daikin Industries) to obtain a resin transparent mold. A polymer hole array was formed by an optical imprint process using a resin transparent mold using an Al plate as a base material. For light imprinting, a photo-curing resin (PAK-02, manufactured by Toyo Gosei Kogyo Co., Ltd.) was used, and a method of performing light irradiation while pressing a resin transparent mold under a pressure condition of 30 kg / cm ² was used. As a result, a polymer hole array mask was formed on the surface of the Al plate. Thereafter, etching was performed for 10 minutes from the vertical direction of the sample by Ar ion milling to remove the remaining film layer and to form a recess pattern on the surface of the Al plate. Thereafter, the Al plate was anodized for 5 minutes at a 0.05 M oxalic acid aqueous solution, a bath temperature of 17 ° C., and a formation voltage of 80 V to obtain anodized porous alumina in which pores were regularly arranged at a cycle of 200 nm. Finally, the polymer mask was removed by irradiating the sample surface with an excimer lamp for 1 hour. FIG. 11 shows the result of observing the surface of the obtained porous structural material made of anodized porous alumina with an electron microscope.

Example 4 [Production of ideally aligned anodized porous alumina having a pore period of 200 nm]
Using a porous alumina having tapered pores with a pore period of 200 nm and a pore depth of 700 nm as an imprint mold, the structure was transferred to a photocurable resin to form a tapered polymer pillar array. Ni was sputtered on the surface of this polymer pillar array to a thickness of 10 nm, and immersed in a 0.1 wt% optool solution (manufactured by Daikin Industries) to obtain a resin transparent mold. A polymer hole array was formed by an optical imprint process using a resin transparent mold using an Al plate as a base material. For light imprinting, a photo-curing resin (PAK-02, manufactured by Toyo Gosei Kogyo Co., Ltd.) was used, and a method of performing light irradiation while pressing a resin transparent mold under a pressure condition of 30 kg / cm ² was used. As a result, a polymer hole array mask was formed on the surface of the Al plate. A porous structure composed of anodized porous alumina with pores regularly arranged at a period of 200 nm by anodizing an Al plate with a mask for 5 minutes at 0.05M oxalic acid aqueous solution, bath temperature 17 ° C, formation voltage 80V. Obtained material.

Example 5 [Preparation of porous silicon having a pore period of 200 nm]
Using a porous alumina having tapered pores with a pore period of 200 nm and a pore depth of 700 nm as an imprint mold, the structure was transferred to a photocurable resin to form a tapered polymer pillar array. Ni was sputtered on the surface of this polymer pillar array to a thickness of 10 nm, and immersed in a 0.1 wt% optool solution (manufactured by Daikin Industries) to obtain a resin transparent mold. A polymer hole array was formed by an optical imprint process using a resin transparent mold using a Si plate as a base material. For light imprinting, a photo-curing resin (PAK-02, manufactured by Toyo Gosei Kogyo Co., Ltd.) was used, and a method of performing light irradiation while pressing a resin transparent mold under a pressure condition of 30 kg / cm ² was used. As a result, a polymer hole array mask was formed on the surface of the Si plate. Thereafter, etching was performed for 10 minutes from the vertical direction of the sample by Ar ion milling to remove the remaining film layer and to form a recess pattern on the surface of the Al plate. Thereafter, the Si plate was subjected to electrolytic etching for 20 minutes under a constant current condition of 5 mA / cm ² using a 3 wt% hydrofluoric acid aqueous solution, a bath temperature of 0 ° C., and a platinum plate as a counter electrode. Finally, the polymer mask was removed by irradiating the sample surface with an excimer lamp for 1 hour. FIG. 12 shows an observation result of the surface of the obtained porous structure material made of porous silicon by an electron microscope.

Example 6 [Production of porous silicon having a pore period of 200 nm]
Using a porous alumina having tapered pores with a pore period of 200 nm and a pore depth of 700 nm as an imprint mold, the structure was transferred to a photocurable resin to form a tapered polymer pillar array. Ni was sputtered on the surface of this polymer pillar array to a thickness of 10 nm, and immersed in a 0.1 wt% optool solution (manufactured by Daikin Industries) to obtain a resin transparent mold. A polymer hole array was formed by an optical imprint process using a resin transparent mold using a Si plate as a base material. For light imprinting, a photo-curing resin (PAK-02, manufactured by Toyo Gosei Kogyo Co., Ltd.) was used, and a method of performing light irradiation while pressing a resin transparent mold under a pressure condition of 30 kg / cm ² was used. As a result, a polymer hole array mask was formed on the surface of the Si plate. Thereafter, the Si plate was subjected to electrolytic etching for 20 minutes under a constant current condition of 5 mA / cm ² using a 3 wt% hydrofluoric acid aqueous solution, a bath temperature of 0 ° C., and a platinum plate as a counter electrode. Finally, the polymer mask was removed by irradiating the sample surface with an excimer lamp for 1 hour to obtain a porous structure material made of porous silicon.

  The method for producing a porous structural material according to the present invention is applicable to all fields in which it is required to efficiently produce a hole array structural material in which fine pores are regularly arranged.

1 Base material 2, 25, 36, 47, 54, 63, 74 Mask 3, 34, 61 Mold 4, 24, 35, 46, 53, 62 Concavity and convexity patterns 5, 26, 37, 48, 55, 64 Concavity 6, 8, 11, 27, 38, 49, 56, 66, 75 Pore 7, 10, 12, 28, 39, 67, 76 Porous structural material 9 Porous oxide film 21 Photocurable material layer 22 Transparent mold 23, 45 Light 31 Anodized porous alumina 32 Uneven pattern 33 of anodized porous alumina Mold forming material 41 Transparent resin mold 42 Pillar array 43 Metal or metal oxide thin film 44 Photocurable material layer 51 Tapered pillar 52 Tapered pillar array mold 65, 73 Depression 71 Mask Formation Layer 72 Mold Protrusion

Claims (15)

  A concavo-convex pattern is formed by an imprint process on a mask provided on a base material, and pore formation is performed by an electrochemical method at a base material position corresponding to a concave portion of the formed concavo-convex pattern. A method for producing a porous structural material with controlled pore arrangement.   2. The method for producing a porous structure material according to claim 1, wherein the mask pattern formed by the imprint method has a hole array structure.   The method for producing a porous structure material according to claim 1, wherein an anodizing method is used as an electrochemical pore forming method.   3. The method for producing a porous structure material according to claim 1, wherein an electrolytic etching method is used as an electrochemical pore forming method.   A mask made of a photo-curable resin is provided on the surface of the base material, and a concavo-convex pattern is formed on the mask by a light imprint process using a light transmissive mold. The manufacturing method of the porous structural material as described in 2.   6. The method for producing a porous structure material according to claim 5, wherein the light transmissive mold is made of resin.   The production of a porous structural material according to claim 6, characterized in that a light-transmissive resin mold is used in which a metal oxide or metal is coated on the surface of the mold and surface chemical modification with a release agent is possible. Method.   The method for producing a porous structure material according to any one of claims 1 to 7, wherein anodized porous alumina is used for producing an imprint mold.   The porous structure material according to any one of claims 1 to 8, wherein pore formation is directly performed without an operation of removing the remaining film layer at the bottom of the concave portion of the concave and convex pattern formed by the imprint process. Manufacturing method.   The method for producing a porous structure according to claim 9, wherein the remaining film layer formed by the imprint process has a thickness of 20 nm or less. The method for producing a porous structure according to any one of claims 1 to 10, wherein a mold pressing pressure when forming the uneven pattern by an imprint process is 10 kg / cm ² or more.   Form a concavo-convex pattern on the mask by the imprint process, remove the residual film layer at the bottom of the concave portion of the concavo-convex pattern by at least one of dry etching, excimer lamp treatment, and UV ozone treatment, and the base material of the portion corresponding to the concave portion The method for producing a porous structure material according to claim 1, wherein pores are formed after exposing the material.   An uneven pattern is formed on the mask by the imprint process, a recess is formed at the base material position corresponding to the recess of the uneven pattern by dry etching, and pore formation is performed by an electrochemical process using the recess as a starting point of pore generation. The method for producing a porous structure material according to any one of claims 1 to 8, wherein   When forming a concavo-convex pattern on the mask by the imprint process, the mold is pressed until the mold protrusion penetrates the mask and the tip of the mold protrusion forms a depression on the base material, and the depression is the starting point of pore generation. The method for producing a porous structure material according to claim 1, wherein pore formation is performed by an electrochemical process.   The method for producing a porous structure material according to claim 1, wherein a mold having a tapered pillar array structure is used for the imprint process.

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