JP2000183044A - プラズマエッチング装置およびエッチングの方法 - Google Patents
プラズマエッチング装置およびエッチングの方法Info
- Publication number
- JP2000183044A JP2000183044A JP10377836A JP37783698A JP2000183044A JP 2000183044 A JP2000183044 A JP 2000183044A JP 10377836 A JP10377836 A JP 10377836A JP 37783698 A JP37783698 A JP 37783698A JP 2000183044 A JP2000183044 A JP 2000183044A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- sample
- etching
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000001020 plasma etching Methods 0.000 title claims description 27
- 239000007789 gas Substances 0.000 claims abstract description 86
- 238000005530 etching Methods 0.000 claims abstract description 57
- 230000008569 process Effects 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000012495 reaction gas Substances 0.000 claims description 21
- 238000010168 coupling process Methods 0.000 claims description 18
- 230000008878 coupling Effects 0.000 claims description 17
- 238000005859 coupling reaction Methods 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 5
- 150000002366 halogen compounds Chemical class 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 32
- 230000007246 mechanism Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 30
- 239000013078 crystal Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 101150000715 DA18 gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101000650817 Homo sapiens Semaphorin-4D Proteins 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 101001062854 Rattus norvegicus Fatty acid-binding protein 5 Proteins 0.000 description 1
- -1 S iCl4 Chemical compound 0.000 description 1
- 102100027744 Semaphorin-4D Human genes 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10377836A JP2000183044A (ja) | 1998-12-11 | 1998-12-11 | プラズマエッチング装置およびエッチングの方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10377836A JP2000183044A (ja) | 1998-12-11 | 1998-12-11 | プラズマエッチング装置およびエッチングの方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000183044A true JP2000183044A (ja) | 2000-06-30 |
| JP2000183044A5 JP2000183044A5 (cg-RX-API-DMAC7.html) | 2006-03-23 |
Family
ID=18509187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10377836A Pending JP2000183044A (ja) | 1998-12-11 | 1998-12-11 | プラズマエッチング装置およびエッチングの方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000183044A (cg-RX-API-DMAC7.html) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002173779A (ja) * | 2000-12-05 | 2002-06-21 | Sekisui Chem Co Ltd | 常圧プラズマガスノズル体 |
| JP2004518526A (ja) * | 2001-01-30 | 2004-06-24 | ラプト インダストリーズ インコーポレイテッド | 損傷の無い表面の造形のための大気圧反応性原子プラズマ加工装置及び方法 |
| KR100464856B1 (ko) * | 2002-11-07 | 2005-01-05 | 삼성전자주식회사 | 표면 식각 방법 및 실리콘 기판 이면 식각 방법. |
| JP2006331664A (ja) * | 2005-05-23 | 2006-12-07 | Sharp Corp | プラズマ処理装置 |
| JP2007115453A (ja) * | 2005-10-19 | 2007-05-10 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| JP2007305309A (ja) * | 2006-05-08 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 大気圧プラズマ発生方法及び装置 |
| US7371992B2 (en) | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
| JP2009170237A (ja) * | 2008-01-16 | 2009-07-30 | Hitachi Displays Ltd | 局所プラズマ処理装置及び処理方法 |
| US7591957B2 (en) | 2001-01-30 | 2009-09-22 | Rapt Industries, Inc. | Method for atmospheric pressure reactive atom plasma processing for surface modification |
| JP2010135351A (ja) * | 2008-12-02 | 2010-06-17 | Sanyu Seisakusho:Kk | 顕微鏡付吸引型局所マイクロプラズマエッチング装置 |
| JP2010153783A (ja) * | 2008-11-19 | 2010-07-08 | Sanyu Seisakusho:Kk | 吸引型プラズマエッチング装置およびプラズマエッチング方法 |
| US7955513B2 (en) | 2001-11-07 | 2011-06-07 | Rapt Industries, Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
| JP2012528454A (ja) * | 2008-05-30 | 2012-11-12 | コロラド ステート ユニバーシティー リサーチ ファウンデーション | 組織の広範囲表面処理のためのプラズマデバイス |
-
1998
- 1998-12-11 JP JP10377836A patent/JP2000183044A/ja active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002173779A (ja) * | 2000-12-05 | 2002-06-21 | Sekisui Chem Co Ltd | 常圧プラズマガスノズル体 |
| US7510664B2 (en) | 2001-01-30 | 2009-03-31 | Rapt Industries, Inc. | Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces |
| JP2004518526A (ja) * | 2001-01-30 | 2004-06-24 | ラプト インダストリーズ インコーポレイテッド | 損傷の無い表面の造形のための大気圧反応性原子プラズマ加工装置及び方法 |
| JP2010147028A (ja) * | 2001-01-30 | 2010-07-01 | Rapt Industries Inc | 損傷の無い表面の造形のための大気圧反応性原子プラズマ加工装置及び方法 |
| US7591957B2 (en) | 2001-01-30 | 2009-09-22 | Rapt Industries, Inc. | Method for atmospheric pressure reactive atom plasma processing for surface modification |
| US7955513B2 (en) | 2001-11-07 | 2011-06-07 | Rapt Industries, Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
| KR100464856B1 (ko) * | 2002-11-07 | 2005-01-05 | 삼성전자주식회사 | 표면 식각 방법 및 실리콘 기판 이면 식각 방법. |
| US7371992B2 (en) | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
| JP2006331664A (ja) * | 2005-05-23 | 2006-12-07 | Sharp Corp | プラズマ処理装置 |
| JP2007115453A (ja) * | 2005-10-19 | 2007-05-10 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| JP2007305309A (ja) * | 2006-05-08 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 大気圧プラズマ発生方法及び装置 |
| JP2009170237A (ja) * | 2008-01-16 | 2009-07-30 | Hitachi Displays Ltd | 局所プラズマ処理装置及び処理方法 |
| JP2012528454A (ja) * | 2008-05-30 | 2012-11-12 | コロラド ステート ユニバーシティー リサーチ ファウンデーション | 組織の広範囲表面処理のためのプラズマデバイス |
| JP2010153783A (ja) * | 2008-11-19 | 2010-07-08 | Sanyu Seisakusho:Kk | 吸引型プラズマエッチング装置およびプラズマエッチング方法 |
| JP2010135351A (ja) * | 2008-12-02 | 2010-06-17 | Sanyu Seisakusho:Kk | 顕微鏡付吸引型局所マイクロプラズマエッチング装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11664236B2 (en) | Method of etching film and plasma processing apparatus | |
| TWI460785B (zh) | 電漿處理室 | |
| CN111986975B (zh) | 增进工艺均匀性的方法及系统 | |
| JP5554704B2 (ja) | 基材処理のためのエッジリング配置 | |
| JP2000183044A (ja) | プラズマエッチング装置およびエッチングの方法 | |
| CN105489485B (zh) | 处理被处理体的方法 | |
| CN111373511B (zh) | 等离子体处理方法 | |
| KR20130124394A (ko) | 다수의 용량 및 유도 전원을 갖는 플라즈마 처리 반응기 | |
| KR20200140388A (ko) | 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착 | |
| TWI782975B (zh) | 蝕刻方法 | |
| JP2005039015A (ja) | プラズマ処理方法および装置 | |
| WO2016056399A1 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
| KR20210065199A (ko) | 하드마스크의 제거를 위한 수증기 기반 불소 함유 플라즈마 | |
| WO2018008640A1 (ja) | 被処理体を処理する方法 | |
| KR20160149151A (ko) | 플라즈마 처리 방법 | |
| KR20110005661A (ko) | 표면 처리 방법 | |
| JP2018026495A (ja) | 被処理体を処理する方法 | |
| CN101194340B (zh) | 使用电极片独立运动的蚀刻率均一性的改进 | |
| JPH10199869A (ja) | ドライエッチング方法 | |
| JP2000183044A5 (cg-RX-API-DMAC7.html) | ||
| CN101681830B (zh) | 干式蚀刻装置及干式蚀刻方法 | |
| JP6767302B2 (ja) | 成膜方法 | |
| TW201920752A (zh) | 電漿處理方法及電漿處理裝置 | |
| JP2015023168A (ja) | プラズマ処理装置、及びステージ製造方法 | |
| JP5893260B2 (ja) | プラズマ処理装置および処理方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051115 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20051115 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071026 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071107 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080415 |