JP2000106340A - 露光装置及び走査露光方法、並びにステージ装置 - Google Patents

露光装置及び走査露光方法、並びにステージ装置

Info

Publication number
JP2000106340A
JP2000106340A JP10290053A JP29005398A JP2000106340A JP 2000106340 A JP2000106340 A JP 2000106340A JP 10290053 A JP10290053 A JP 10290053A JP 29005398 A JP29005398 A JP 29005398A JP 2000106340 A JP2000106340 A JP 2000106340A
Authority
JP
Japan
Prior art keywords
substrate
scanning exposure
exposure
mask
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10290053A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000106340A5 (enExample
Inventor
Takechika Nishi
健爾 西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP10290053A priority Critical patent/JP2000106340A/ja
Publication of JP2000106340A publication Critical patent/JP2000106340A/ja
Publication of JP2000106340A5 publication Critical patent/JP2000106340A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10290053A 1997-09-26 1998-09-28 露光装置及び走査露光方法、並びにステージ装置 Withdrawn JP2000106340A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10290053A JP2000106340A (ja) 1997-09-26 1998-09-28 露光装置及び走査露光方法、並びにステージ装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP9-279500 1997-09-26
JP27950097 1997-09-26
JP22650098 1998-07-27
JP10-226500 1998-07-27
JP10290053A JP2000106340A (ja) 1997-09-26 1998-09-28 露光装置及び走査露光方法、並びにステージ装置

Publications (2)

Publication Number Publication Date
JP2000106340A true JP2000106340A (ja) 2000-04-11
JP2000106340A5 JP2000106340A5 (enExample) 2005-11-10

Family

ID=27331177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10290053A Withdrawn JP2000106340A (ja) 1997-09-26 1998-09-28 露光装置及び走査露光方法、並びにステージ装置

Country Status (1)

Country Link
JP (1) JP2000106340A (enExample)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6927505B2 (en) 2001-12-19 2005-08-09 Nikon Corporation Following stage planar motor
KR100516689B1 (ko) * 2002-04-22 2005-09-22 캐논 가부시끼가이샤 구동장치, 노광장치 및 디바이스제조방법
US7016019B2 (en) 2003-12-16 2006-03-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100585108B1 (ko) * 2003-11-14 2006-06-01 삼성전자주식회사 스캔 방식의 노광 장치를 이용한 웨이퍼 노광 방법
JP2009117877A (ja) * 2003-06-19 2009-05-28 Nikon Corp 露光装置及びデバイス製造方法
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
JP2014029956A (ja) * 2012-07-31 2014-02-13 Canon Inc 露光方法、露光装置及びデバイス製造方法
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
JP2016132017A (ja) * 2015-01-21 2016-07-25 株式会社ディスコ レーザー加工装置
JP2016136267A (ja) * 2006-09-01 2016-07-28 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9500960B2 (en) 2003-04-11 2016-11-22 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9632431B2 (en) 2004-02-02 2017-04-25 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
WO2019044489A1 (ja) * 2017-08-28 2019-03-07 キヤノン株式会社 駆動装置および撮像装置の制御方法
WO2023203611A1 (ja) * 2022-04-18 2023-10-26 ヤマハ発動機株式会社 レーザ加工装置、レーザ加工方法、レーザ加工プログラム、記録媒体、半導体チップ製造方法および半導体チップ
WO2023203613A1 (ja) * 2022-04-18 2023-10-26 ヤマハ発動機株式会社 レーザ加工装置、レーザ加工方法、レーザ加工プログラム、記録媒体、半導体チップ製造方法および半導体チップ
WO2023203614A1 (ja) * 2022-04-18 2023-10-26 ヤマハ発動機株式会社 レーザ加工装置、レーザ加工方法、レーザ加工プログラム、記録媒体、半導体チップ製造方法および半導体チップ
JPWO2023203612A1 (enExample) * 2022-04-18 2023-10-26
JP2024086767A (ja) * 2020-02-06 2024-06-28 株式会社東京精密 レーザ加工装置及び加工方法

Cited By (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6927505B2 (en) 2001-12-19 2005-08-09 Nikon Corporation Following stage planar motor
KR100516689B1 (ko) * 2002-04-22 2005-09-22 캐논 가부시끼가이샤 구동장치, 노광장치 및 디바이스제조방법
US9885959B2 (en) 2003-04-09 2018-02-06 Nikon Corporation Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9946163B2 (en) 2003-04-11 2018-04-17 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9500960B2 (en) 2003-04-11 2016-11-22 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8436979B2 (en) 2003-06-19 2013-05-07 Nikon Corporation Exposure apparatus, and device manufacturing method
JP2009117877A (ja) * 2003-06-19 2009-05-28 Nikon Corp 露光装置及びデバイス製造方法
JP2010118687A (ja) * 2003-06-19 2010-05-27 Nikon Corp 露光装置及びデバイス製造方法
JP2014078752A (ja) * 2003-06-19 2014-05-01 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
JP2016042187A (ja) * 2003-06-19 2016-03-31 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US10191388B2 (en) 2003-06-19 2019-01-29 Nikon Corporation Exposure apparatus, and device manufacturing method
JP2016106251A (ja) * 2003-06-19 2016-06-16 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US9810995B2 (en) 2003-06-19 2017-11-07 Nikon Corporation Exposure apparatus and device manufacturing method
US10007188B2 (en) 2003-06-19 2018-06-26 Nikon Corporation Exposure apparatus and device manufacturing method
US9551943B2 (en) 2003-06-19 2017-01-24 Nikon Corporation Exposure apparatus and device manufacturing method
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9760014B2 (en) 2003-10-28 2017-09-12 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
KR100585108B1 (ko) * 2003-11-14 2006-06-01 삼성전자주식회사 스캔 방식의 노광 장치를 이용한 웨이퍼 노광 방법
US10281632B2 (en) 2003-11-20 2019-05-07 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US7016019B2 (en) 2003-12-16 2006-03-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10007196B2 (en) 2004-02-02 2018-06-26 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US9632431B2 (en) 2004-02-02 2017-04-25 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US9665016B2 (en) 2004-02-02 2017-05-30 Nikon Corporation Lithographic apparatus and method having substrate table and sensor table to hold immersion liquid
US9684248B2 (en) 2004-02-02 2017-06-20 Nikon Corporation Lithographic apparatus having substrate table and sensor table to measure a patterned beam
US10139737B2 (en) 2004-02-02 2018-11-27 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US10241417B2 (en) 2004-02-06 2019-03-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10007194B2 (en) 2004-02-06 2018-06-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10234770B2 (en) 2004-02-06 2019-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
JP2018151646A (ja) * 2006-09-01 2018-09-27 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP2016136267A (ja) * 2006-09-01 2016-07-28 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP2017010042A (ja) * 2006-09-01 2017-01-12 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9857599B2 (en) 2007-10-24 2018-01-02 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP2014029956A (ja) * 2012-07-31 2014-02-13 Canon Inc 露光方法、露光装置及びデバイス製造方法
JP2016132017A (ja) * 2015-01-21 2016-07-25 株式会社ディスコ レーザー加工装置
KR102351840B1 (ko) 2015-01-21 2022-01-18 가부시기가이샤 디스코 레이저 가공 장치
KR20160090243A (ko) * 2015-01-21 2016-07-29 가부시기가이샤 디스코 레이저 가공 장치
WO2019044489A1 (ja) * 2017-08-28 2019-03-07 キヤノン株式会社 駆動装置および撮像装置の制御方法
US11719906B2 (en) 2017-08-28 2023-08-08 Canon Kabushiki Kaisha Driving apparatus
JP2024086767A (ja) * 2020-02-06 2024-06-28 株式会社東京精密 レーザ加工装置及び加工方法
JP7710154B2 (ja) 2020-02-06 2025-07-18 株式会社東京精密 レーザ加工装置及び加工方法
WO2023203611A1 (ja) * 2022-04-18 2023-10-26 ヤマハ発動機株式会社 レーザ加工装置、レーザ加工方法、レーザ加工プログラム、記録媒体、半導体チップ製造方法および半導体チップ
JPWO2023203612A1 (enExample) * 2022-04-18 2023-10-26
WO2023203612A1 (ja) * 2022-04-18 2023-10-26 ヤマハ発動機株式会社 レーザ加工装置、レーザ加工方法、レーザ加工プログラム、記録媒体、半導体チップ製造方法および半導体チップ
JPWO2023203613A1 (enExample) * 2022-04-18 2023-10-26
JPWO2023203614A1 (enExample) * 2022-04-18 2023-10-26
WO2023203614A1 (ja) * 2022-04-18 2023-10-26 ヤマハ発動機株式会社 レーザ加工装置、レーザ加工方法、レーザ加工プログラム、記録媒体、半導体チップ製造方法および半導体チップ
JP7571345B2 (ja) 2022-04-18 2024-10-22 ヤマハ発動機株式会社 レーザ加工装置、レーザ加工方法、レーザ加工プログラム、記録媒体、半導体チップ製造方法および半導体チップ
JP7571344B2 (ja) 2022-04-18 2024-10-22 ヤマハ発動機株式会社 レーザ加工装置、レーザ加工方法、レーザ加工プログラム、記録媒体、半導体チップ製造方法および半導体チップ
JP7614451B2 (ja) 2022-04-18 2025-01-15 ヤマハ発動機株式会社 レーザ加工装置、レーザ加工方法、レーザ加工プログラム、記録媒体、半導体チップ製造方法および半導体チップ
WO2023203613A1 (ja) * 2022-04-18 2023-10-26 ヤマハ発動機株式会社 レーザ加工装置、レーザ加工方法、レーザ加工プログラム、記録媒体、半導体チップ製造方法および半導体チップ

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