JP2000087158A - Copper alloy for semiconductor lead frame - Google Patents
Copper alloy for semiconductor lead frameInfo
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- JP2000087158A JP2000087158A JP25862098A JP25862098A JP2000087158A JP 2000087158 A JP2000087158 A JP 2000087158A JP 25862098 A JP25862098 A JP 25862098A JP 25862098 A JP25862098 A JP 25862098A JP 2000087158 A JP2000087158 A JP 2000087158A
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- copper alloy
- lead frame
- workability
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子電気機器用の
リード材、端子材などに使用される銅合金に係り、特
に、ＩＣなどの半導体素子用のリード材（リードフレー
ム材）に好適な銅合金に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a copper alloy used for a lead material and a terminal material for electronic and electrical equipment, and more particularly to a lead material (lead frame material) for a semiconductor element such as an IC. Regarding copper alloy.
【０００２】[0002]
【従来の技術】従来より、半導体機器のリードフレーム
材、端子材としては、鉄系材料の他、電気伝導性および
熱伝導性に優れているＣｕ−Ｓｎ系、Ｃｕ−Ｆｅ系等の
銅系材料も広く用いられている。2. Description of the Related Art Conventionally, as lead frame materials and terminal materials for semiconductor devices, in addition to iron-based materials, copper-based materials such as Cu-Sn-based materials and Cu-Fe-based materials having excellent electrical and thermal conductivity have been used. Materials are also widely used.
【０００３】ところで、前記リードフレーム材などに
は、強度、耐熱性、電気伝導性、および熱伝導性の他、
貴金属（Ａｇなど）めっきや半田めっきが施されるた
め、めっき性、半田接合性、表面平滑性等の特性が重視
される。また、条および板からリードフレームを成型す
る際の寸法精度を確保するために、良好なエッチング性
又は打抜加工性などの成型加工性が要求され、さらに、
価格面で実用的なことも重要である。[0003] By the way, in addition to the strength, heat resistance, electric conductivity, and heat conductivity, the lead frame material and the like include
Since noble metal (Ag or the like) plating or solder plating is applied, characteristics such as plating properties, solder bonding properties, and surface smoothness are emphasized. In addition, in order to ensure dimensional accuracy when molding a lead frame from a strip and a plate, molding workability such as good etching or punching workability is required.
It is also important to be practical in terms of price.
【０００４】そして、これらの要求される特性は、近年
の半導体機器の高集積化、小型化、高機能化、低コスト
化に対応して、より厳しくなってきている。特に、近
年、リードフレームの多ピン化、小型化、薄肉化などが
進み、高度な寸法精度を確保するために良好な成型加工
性を有する材料が強く求められている。[0004] These required characteristics have become more severe in response to the recent high integration, miniaturization, high functionality, and low cost of semiconductor devices. In particular, in recent years, the number of pins in a lead frame has been increased, the size has been reduced, the thickness has been reduced, and a material having good moldability has been strongly demanded in order to ensure high dimensional accuracy.
【０００５】リードフレームの成型加工法としては、打
抜加工法が主流であり、近年の技術革新により、多ピン
またはファインピッチのリードフレーム、ピン数は少な
いが多列に加工するマトリックス状のリードフレームな
どが、打抜加工により製造されるようになり、材料の打
抜加工性の重要性が、特に増している。また、打抜加工
は、コスト的にも有利な加工法である。[0005] As a molding method of a lead frame, a punching method is predominant, and due to recent technological innovations, a multi-pin or fine-pitch lead frame, a matrix-shaped lead that has a small number of pins but is processed in multiple rows. Frames and the like have been manufactured by stamping, and the importance of stamping workability of materials has been particularly increasing. Punching is also a cost-effective processing method.
【０００６】[0006]
【発明が解決しようとする課題】前述のＣｕ−Ｓｎ系合
金およびＣｕ−Ｆｅ系合金は、リードフレーム材として
広く用いられているが、打抜加工性がやや劣るという問
題がある。その改善策として、打抜加工性に優れたＣｕ
−Ｚｎ合金をベースとする合金が、特開平１−１６２７
３７号公報や特開平５−３６８７８号公報に開示され
た。The above-mentioned Cu-Sn-based alloy and Cu-Fe-based alloy are widely used as lead frame materials, but have a problem that punching workability is slightly inferior. As an improvement measure, Cu with excellent punching workability
-An alloy based on a Zn alloy is disclosed in
No. 37 and JP-A-5-36878.
【０００７】しかし、前者の特開平１−１６２７３７号
公報に開示されたＣｕ−Ｚｎ合金は、応力腐食割れが発
生し易く、また、１００ピン以上の多ピンリードフレー
ムでは十分な打抜加工性がえられないという問題があ
り、後者の特開平５−３６８７８号公報に開示されたＣ
ｕ−Ｚｎ系合金は、表面にＮｉ／Ｐｄめっきを施して応
力腐食割れを改善したものであるが、リードを曲げ加工
するとＮｉめっき層に亀裂が入って応力腐食割れが生じ
るという問題点がある。However, the Cu-Zn alloy disclosed in the former JP-A-1-162737 is liable to cause stress corrosion cracking, and has sufficient punching workability with a multi-pin lead frame having 100 pins or more. There is a problem in that the C
The u-Zn-based alloy has a surface in which Ni / Pd plating is applied to improve stress corrosion cracking. However, when a lead is bent, the Ni plating layer is cracked and stress corrosion cracking occurs. .
【０００８】本発明は、このような事情の下になされ、
強度、導電性、曲げ加工性、打抜加工性、耐応力腐食割
れ性、製造加工性などに優れた半導体リードフレーム用
銅合金を提供することを目的とする。[0008] The present invention has been made under such circumstances,
An object of the present invention is to provide a copper alloy for a semiconductor lead frame excellent in strength, conductivity, bending workability, punching workability, stress corrosion cracking resistance, manufacturing workability, and the like.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決するた
め、第１の発明は、Ｚｎを５〜３５ｗｔ％、Ｓｎを０．
１〜３ｗｔ％、Ｐを０．００５〜０．５％、Ｓｉ、Ｃ
ｒ、Ｔｉ、Ｚｒ、Ｃｏ、Ｍｎ、ＡｌおよびＭｇよりなる
群より選ばれた１種又は２種以上を総計で０．０１〜１
ｗｔ％含み、残部Ｃｕと不可避的な不純物からなる銅合
金であって、結晶粒度が５〜３５μｍであることを特徴
とする半導体リードフレーム用銅合金を提供する。In order to solve the above-mentioned problems, the first aspect of the present invention relates to a method for producing Zn in an amount of 5 to 35 wt% and Sn in an amount of 0.
1-3 wt%, P is 0.005-0.5%, Si, C
one or more selected from the group consisting of r, Ti, Zr, Co, Mn, Al and Mg in a total of 0.01 to 1
Provided is a copper alloy for a semiconductor lead frame, which is a copper alloy containing wt%, the balance being Cu and unavoidable impurities, and having a crystal grain size of 5 to 35 μm.
【００１０】また、第２の発明は、Ｚｎを５〜３５ｗｔ
％、Ｓｎを０．１〜３ｗｔ％、Ｐを０．００５〜０．５
％、Ｓｉ、Ｃｒ、Ｔｉ、Ｚｒ、Ｃｏ、Ｍｎ、Ａｌおよび
Ｍｇよりなる群より選ばれた１種又は２種以上を総計で
０．０１〜１ｗｔ％含み、更にＰｂ、Ｂｉ、Ｓｅ、Ｔ
ｅ、Ｃａ、Ｓｒおよびミッシュメタルよりなる群より選
ばれた１種又は２種以上を総計で０．００１〜０．５ｗ
ｔ％含み、残部Ｃｕと不可避的不純物からなる銅合金で
あって、結晶粒度が５〜３５μｍであることを特徴とす
る半導体リードフレーム用銅合金を提供する。In the second invention, the Zn content is 5 to 35 wt.
%, Sn 0.1 to 3 wt%, P 0.005 to 0.5
%, One or more selected from the group consisting of Si, Cr, Ti, Zr, Co, Mn, Al and Mg in a total amount of 0.01 to 1 wt%, and further contains Pb, Bi, Se, T
e, Ca, Sr and one or more selected from the group consisting of misch metal in a total of 0.001 to 0.5 w
The present invention provides a copper alloy for a semiconductor lead frame, which is a copper alloy containing t%, the balance being Cu and unavoidable impurities, and having a crystal grain size of 5 to 35 μm.
【００１１】ミッシュメタルは、Ｃｅ、Ｌａを主成分と
する合金で、通常Ｃｅ４５〜５０重量％、Ｌａ２０〜４
０重量％、残部その他の希土類元素（Ｎｄ、Ｓｍ、Ｐｒ
等）からなる。The misch metal is an alloy containing Ce and La as main components, usually 45 to 50% by weight of Ce and 20 to 4% of La.
0% by weight, balance other rare earth elements (Nd, Sm, Pr
Etc.).
【００１２】[0012]
【発明の実施の形態】本発明に係る銅合金は、Ｃｕ−Ｚ
ｎ系合金をベースとし、その欠点である応力腐食割れ
を、Ｓｎを適量添加することと、結晶粒度を適正に制御
することにより改善したものである。その他、Ｓｎは強
度向上に、また結晶粒度の適正化は曲げ加工性の改善に
寄与する。DETAILED DESCRIPTION OF THE INVENTION The copper alloy according to the present invention is Cu-Z
It is based on an n-based alloy, and its stress corrosion cracking, which is a drawback, is improved by adding an appropriate amount of Sn and appropriately controlling the crystal grain size. In addition, Sn contributes to improvement in strength, and optimization of the crystal grain size contributes to improvement in bending workability.
【００１３】本発明に係る銅合金において、Ｚｎは打抜
加工時のバリの発生やリードの捩じれを極めて少なくし
て、打抜加工性を向上させるという作用を示す。Ｚｎの
含有量を５〜３５ｗｔ％に規定する理由は、５ｗｔ％未
満ではその添加効果が十分に得られず、３５ｗｔ％を超
えるとβ相が出現して冷間加工性が悪化するためであ
る。好ましいＺｎの含有量は、６〜３０ｗｔ％である。In the copper alloy according to the present invention, Zn has an effect of improving the punching workability by extremely reducing the generation of burrs and the twisting of the leads during the punching. The reason for defining the Zn content to be 5 to 35 wt% is that if it is less than 5 wt%, the effect of its addition cannot be sufficiently obtained, and if it exceeds 35 wt%, a β phase appears and the cold workability deteriorates. . The preferred Zn content is 6 to 30 wt%.
【００１４】Ｓｎは、強度向上および耐応力腐食割れ性
の改善に寄与する。その含有量を０．１〜３ｗｔ％に規
定する理由は、０．１ｗｔ％未満ではその添加効果が十
分に得られず、３ｗｔ％を超えると導電性および熱間加
工性が低下するためである。Sn contributes to improvement in strength and resistance to stress corrosion cracking. The reason for defining the content to be 0.1 to 3 wt% is that if the content is less than 0.1 wt%, the effect of the addition is not sufficiently obtained, and if the content exceeds 3 wt%, the conductivity and hot workability are reduced. .
【００１５】本発明に係る銅合金において、結晶粒度を
５〜３５μｍに規定する理由は、結晶粒度が５μｍ未満
でも３５μｍを超えても、その曲げ加工性および対応力
腐食割れ性の改善効果が十分に得られないためである。
好ましい結晶粒度は、５〜２０μｍである。なお、本発
明に係る銅合金において、結晶粒度はＪＩＳ−Ｈ０５０
１に準じて決定される。The reason why the grain size of the copper alloy according to the present invention is specified to be 5 to 35 μm is that even if the grain size is less than 5 μm or more than 35 μm, the effect of improving the bending workability and the corresponding corrosion cracking property is sufficient. Because they cannot be obtained.
The preferred grain size is 5 to 20 μm. In the copper alloy according to the present invention, the crystal grain size is JIS-H050.
Determined according to 1.
【００１６】本発明に係る銅合金において、Ｓｉ、Ｃ
ｒ、Ｔｉ、Ｃｏ、Ｍｎ、ＡｌおよびＭｇは、Ｐと化合物
を形成し、合金強度を高めることにより、打抜加工性を
改善する。これら元素の１種または２種以上の含有量を
総計で０．０１〜１ｗｔ％に規定するのは、０．０１ｗ
ｔ％未満ではその効果が十分に得られず、１ｗｔ％を超
えると導電率および熱間加工性が著しく低下するためで
ある。また、Ｐの含有量は、これらに合わせて０．００
５〜０．５ｗｔ％とするのが望ましい。In the copper alloy according to the present invention, Si, C
r, Ti, Co, Mn, Al and Mg form a compound with P and improve the punching workability by increasing the alloy strength. The content of one or more of these elements is defined as 0.01 to 1 wt% in total, because 0.01 w
If the amount is less than t%, the effect cannot be sufficiently obtained. If the amount exceeds 1% by weight, the conductivity and the hot workability are significantly reduced. Further, the content of P is 0.00
It is desirable that the content be 5 to 0.5 wt%.
【００１７】第２の発明に係る銅合金において、Ｐｂ，
Ｂｉ，Ｓｅ，Ｔｅ，Ｃａ，Ｓｒ，ミッシュメタルは、打
抜加工性の向上に寄与する。これら元素の１種または２
種以上の含有量を総計で０．００１〜０．５ｗｔ％に規
定する理由は、０．００１ｗｔ％未満ではその添加効果
が十分に得られず、０．５ｗｔ％を超えると熱間加工性
が低下するためである。In the copper alloy according to the second invention, Pb,
Bi, Se, Te, Ca, Sr, and misch metal contribute to the improvement of punching workability. One or two of these elements
The reason for specifying the total content of at least one species to be 0.001 to 0.5 wt% is that if the content is less than 0.001 wt%, the effect of the addition cannot be sufficiently obtained, and if the content exceeds 0.5 wt%, the hot workability becomes poor. It is because it falls.
【００１８】本発明に係る銅合金において、リードフレ
ーム材や端子材の強度および耐熱性の向上に有効な添加
元素として、Ｉｎ、Ｂａ、Ｓｂ、Ｈｆ、Ｂｅ、Ｎｂ、Ｐ
ｄ、Ｂ、Ｃなどが挙げられる。その添加量は、導電率を
大幅に低下させない範囲、例えば０．００１〜１ｗｔ％
であるのが望ましい。In the copper alloy according to the present invention, In, Ba, Sb, Hf, Be, Nb, and P are effective as additional elements effective for improving the strength and heat resistance of the lead frame material and the terminal material.
d, B, C and the like. The addition amount is in a range that does not significantly lower the conductivity, for example, 0.001 to 1 wt%.
It is desirable that
【００１９】また、溶解鋳造時に混入するＯおよびＳの
含有量を５０ｐｐｍ以下にすると、めっき性、半田接合
性、半田漏れ性などの表面特性を良好に保持することが
出来る。Further, when the content of O and S mixed at the time of melting and casting is set to 50 ppm or less, it is possible to maintain good surface properties such as plating property, solder bonding property, and solder leakage property.
【００２０】[0020]
【実施例】次に、本発明の実施例を示し、本発明につい
てより具体的に説明する。 （実施例１）下記表１に示す組成の１６種の合金（Ｎ
ｏ．１〜１６）を高周波溶解炉により溶解し、これを６
℃／秒の冷却速度で鋳造して、厚さ３０ｍｍ、幅１００
ｍｍ、長さ１５０ｍｍの鋳塊を得た。この鋳塊を８５０
℃で熱間圧延し、厚さ１２ｍｍの熱間圧延材にした。次
に、この熱間圧延材を厚さ９ｍｍに両面面削して酸化皮
膜を除去し、次いで、厚さ１．２ｍｍに冷間圧延したの
ち、不活性ガス雰囲気中で５３０℃で１時間焼鈍した。
その後、厚さ０．２１ｍｍに冷間圧延したのち、不活性
ガス中で５３０℃で１時間焼鈍し、更に、厚さ０．１５
ｍｍの板材に仕上げ圧延し、１６種の板材試料を得た。Next, examples of the present invention will be shown, and the present invention will be described more specifically. (Example 1) Sixteen alloys (N
o. 1 to 16) were melted by a high frequency melting furnace,
Cast at a cooling rate of ° C./sec, thickness 30 mm, width 100
mm and a 150 mm long ingot were obtained. This ingot is 850
It hot-rolled at ° C, and set it as the hot-rolled material of thickness 12mm. Next, this hot-rolled material was cut on both sides to a thickness of 9 mm to remove an oxide film, then cold-rolled to a thickness of 1.2 mm, and then annealed at 530 ° C. for 1 hour in an inert gas atmosphere. did.
Then, after cold-rolling to a thickness of 0.21 mm, annealing at 530 ° C. for 1 hour in an inert gas,
Finish rolling was performed to obtain a plate material having a thickness of 16 mm.
【００２１】[0021]
【表１】 [Table 1]
【００２２】（比較例１）下記表２に示す組成の９種の
合金（Ｎｏ．１７〜２５）を、実施例１と同じ方法によ
り板材に加工した。Comparative Example 1 Nine alloys (Nos. 17 to 25) having the compositions shown in Table 2 below were processed into sheet materials in the same manner as in Example 1.
【００２３】（比較例２）下記表２に示す組成の２種の
合金（Ｎｏ．２６，２７）を、焼鈍条件以外は実施例１
と同じ方法により板材に加工した。Comparative Example 2 Two alloys (Nos. 26 and 27) having the compositions shown in Table 2 below were used in Example 1 except for the annealing conditions.
It processed into the board | plate material by the same method as above.
【００２４】（従来例）下記表２に示す組成の合金（Ｎ
ｏ．２８）を、実施例１と同じ方法により板材に加工し
た。(Conventional example) An alloy (N
o. 28) was processed into a plate in the same manner as in Example 1.
【００２５】[0025]
【表２】 [Table 2]
【００２６】以上のようにして得られた各々の板材試料
について、（１）結晶粒度、（２）引張強さ（ＴＳ）、
（３）導電率（ＥＣ）、（４）曲げ加工性、（５）打抜
加工性、（６）耐応力腐食割れ性を下記方法により調べ
た。その結果を下記表３，表４に示す。なお、下記表で
は、Ｓｉ、Ｃｒ、Ｔｉ、Ｚｒ、Ｃｏ、Ｍｎ、Ａｌおよび
Ｍｇからなる群の元素は第一群添加元素、Ｐｂ、Ｂｉ、
Ｓｅ、Ｔｅ、Ｃａ、Ｓｒおよびミッシュメタルからなる
群の元素は第二群添加元素と記した。With respect to each plate material sample obtained as described above, (1) grain size, (2) tensile strength (TS),
(3) Conductivity (EC), (4) Bending workability, (5) Punching workability, and (6) Stress corrosion cracking resistance were examined by the following methods. The results are shown in Tables 3 and 4 below. In the table below, the elements of the group consisting of Si, Cr, Ti, Zr, Co, Mn, Al and Mg are the first group additive elements, Pb, Bi,
Elements of the group consisting of Se, Te, Ca, Sr and misch metal are described as second group added elements.
【００２７】（１）結晶粒度：結晶組織を光学顕微鏡
（２００倍）により観察し、ＪＩＳ−Ｈ０５０１の切断
法に準じて測定した。 （２）引張強さ（ＴＳ）：ＪＩＳ−Ｚ２２４１に準じて
測定した。(1) Crystal grain size: The crystal structure was observed with an optical microscope (200 times) and measured according to the cutting method of JIS-H0501. (2) Tensile strength (TS): Measured according to JIS-Z2241.
【００２８】（３）導電率（ＥＣ）：ＪＩＳ−Ｈ０５０
５に準じて測定した。 （４）曲げ加工性：板材を幅１０ｍｍ、長さ５０ｍｍ
（長さ方向と圧延方向が平行）に切出し、これに曲げ半
径０．１ｍｍでＷ曲げし、曲げ部における割れの有無を
５０倍の光学顕微鏡で目視観察した。割れおよび肌荒れ
の無いものを○、肌荒れが生じたものを△、割れが生じ
たものを×と評価した。(3) Conductivity (EC): JIS-H050
5 was measured. (4) Bendability: plate material is 10 mm wide and 50 mm long
(The length direction and the rolling direction were parallel to each other), and the sheet was bent in a W shape with a bending radius of 0.1 mm, and the presence or absence of cracks in the bent portion was visually observed with a 50-fold optical microscope. Those without cracks and rough skin were evaluated as ○, those with rough skin were evaluated as Δ, and those with cracks were evaluated as x.
【００２９】（５）打抜加工性：板材にＳＫＤ１１製金
型で１ｍｍ×５ｍｍの角穴を開け、５００１回目から１
００００回目までの打抜分からサンプルを２０個無作為
に抽出し、サンプルの厚さｂに対する破断部割合（ａ／
ｂ）×１００％を求めた。この破断部割合（破断面比
率）は、打抜加工性の目安の一つとされ、この割合が大
きい程、打抜加工性は良好で、打抜での歩留まりが高
く、かつ加工を精密に行うことが出来ると評価される。(5) Punching workability: A 1 mm × 5 mm square hole was formed in a plate material using a SKD11 mold, and
Twenty samples were randomly extracted from the punching up to the 0000th time, and the ratio of the broken portion to the thickness b of the sample (a /
b) × 100% was determined. This fractured portion ratio (fracture surface ratio) is regarded as one of the standards for punching workability. The larger this ratio is, the better the punching workability is, the higher the yield in punching is, and the processing is performed precisely. It is evaluated that it can do.
【００３０】（６）耐応力腐食割れ性（耐ＳＣＣ性）：
板材から幅８ｍｍ、長さ５０ｍｍ（長さ方向と圧延方向
が平行）の引張試験片を切出し、これをＪＩＳ−Ｃ８３
０６に準拠するアンモニア雰囲気に曝露した。このサン
プルの両端に２０Ｋｇｆ／ｍｍ2 の定荷重をかけ、破断
までの時間を測定した。(6) Stress corrosion cracking resistance (SCC resistance):
A tensile test piece having a width of 8 mm and a length of 50 mm (the length direction and the rolling direction are parallel) was cut out from the plate material, and this was cut out according to JIS-C83.
Exposure to an ammonia atmosphere according to C.06. A constant load of 20 kgf / mm 2 was applied to both ends of the sample, and the time until breakage was measured.
【００３１】[0031]
【表３】 [Table 3]
【００３２】[0032]
【表４】 [Table 4]
【００３３】上記表３、４から明らかなように、本発明
例の試料Ｎｏ．１〜１６はいずれも、総ての特性に優れ
ている。これに対し、比較例の試料Ｎｏ．１７はＺｎが
少ないため、試料Ｎｏ．１９はＳｎが添加されていない
ため、試料Ｎｏ．２１はＰが添加されていないため、試
料Ｎｏ．２３は第一群添加元素が添加されていないた
め、いずれも引張強さが低く、打抜加工性が悪化した。As is apparent from Tables 3 and 4, the sample No. of the present invention example. All of Nos. 1 to 16 are excellent in all characteristics. On the other hand, the sample No. Sample No. 17 has a small amount of Zn. Sample No. 19 had no added Sn, and thus Sample No. Since no P was added to Sample No. 21, Sample No. 21 was not used. In No. 23, since the first group addition element was not added, the tensile strength was low in all cases, and the punching workability was deteriorated.
【００３４】また、比較例の試料Ｎｏ．１８、２０、２
４はＺｎ、Ｓｎ、第一群添加元素のいずれかが多いた
め、製造加工性に劣り、特に試料Ｎｏ．２４は熱延割れ
がひどく、製造ができなかった。試料Ｎｏ．２６，２７
は焼鈍条件が適正でなく、結晶粒度が本発明の規格値外
となり、曲げ加工性が低下した。また、比較例の試料Ｎ
ｏ．１９や従来例の試料Ｎｏ．２８では、Ｓｎが添加さ
れていないために、耐ＳＣＣ性が低下している。Further, the sample No. 18, 20, 2
Sample No. 4 is inferior in manufacturing workability because of a large content of any of Zn, Sn, and the first group addition elements. Sample No. 24 was severely hot-rolled and could not be manufactured. Sample No. 26,27
The annealing condition was not appropriate, the crystal grain size was out of the standard value of the present invention, and the bending workability was lowered. Further, the sample N of the comparative example
o. 19 and the sample No. In No. 28, SCC resistance was lowered because Sn was not added.
【００３５】[0035]
【発明の効果】以上、詳細に述べたように、本発明の半
導体リードフレーム用銅合金は、打抜加工性に優れたＣ
ｕ−Ｚｎ合金をベースとし、これにＳｎ、Ｐなどを適量
添加するとともに、結晶粒度を制御して耐応力腐食割れ
性などを改善したものであり、強度、導電性、曲げ加工
性、打抜加工性、耐応力腐食割れ性、製造加工性などに
優れ、工業上顕著な効果を奏する。As described above in detail, the copper alloy for a semiconductor lead frame according to the present invention has excellent punching workability.
Based on a u-Zn alloy, Sn and P are added in appropriate amounts, and the grain size is controlled to improve stress corrosion cracking resistance and the like. Strength, conductivity, bending workability, punching It is excellent in workability, stress corrosion cracking resistance, manufacturing workability, etc., and has remarkable industrial effects.
Claims (2)
ｗｔ％、Ｐを０．００５〜０．５％、Ｓｉ、Ｃｒ、Ｔ
ｉ、Ｚｒ、Ｃｏ、Ｍｎ、ＡｌおよびＭｇよりなる群より
選ばれた１種又は２種以上を総計で０．０１〜１ｗｔ％
含み、残部Ｃｕと不可避的な不純物からなる銅合金であ
って、結晶粒度が５〜３５μｍであることを特徴とする
半導体リードフレーム用銅合金。1. A Zn content of 5 to 35 wt% and a Sn content of 0.1 to 3 wt.
wt%, P is 0.005 to 0.5%, Si, Cr, T
i, Zr, Co, Mn, Al, and one or more selected from the group consisting of Mg in a total of 0.01 to 1 wt%
A copper alloy for a semiconductor lead frame, comprising: a copper alloy containing Cu and unavoidable impurities, and having a crystal grain size of 5 to 35 μm.
ｗｔ％、Ｐを０．００５〜０．５％、Ｓｉ、Ｃｒ、Ｔ
ｉ、Ｚｒ、Ｃｏ、Ｍｎ、ＡｌおよびＭｇよりなる群より
選ばれた１種又は２種以上を総計で０．０１〜１ｗｔ％
含み、更にＰｂ、Ｂｉ、Ｓｅ、Ｔｅ、Ｃａ、Ｓｒおよび
ミッシュメタルよりなる群より選ばれた１種又は２種以
上を総計で０．００１〜０．５ｗｔ％含み、残部Ｃｕと
不可避的不純物からなる銅合金であって、結晶粒度が５
〜３５μｍであることを特徴とする半導体リードフレー
ム用銅合金。2. The Zn content is 5 to 35 wt%, and the Sn content is 0.1 to 3%.
wt%, P is 0.005 to 0.5%, Si, Cr, T
i, Zr, Co, Mn, Al, and one or more selected from the group consisting of Mg in a total of 0.01 to 1 wt%
And further contains one or more selected from the group consisting of Pb, Bi, Se, Te, Ca, Sr and misch metal in a total amount of 0.001 to 0.5 wt%, with the balance being Cu and unavoidable impurities. Copper alloy having a grain size of 5
A copper alloy for a semiconductor lead frame, which has a thickness of from 35 to 35 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25862098A JP2000087158A (en) | 1998-09-11 | 1998-09-11 | Copper alloy for semiconductor lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25862098A JP2000087158A (en) | 1998-09-11 | 1998-09-11 | Copper alloy for semiconductor lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000087158A true JP2000087158A (en) | 2000-03-28 |
Family
ID=17322817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25862098A Pending JP2000087158A (en) | 1998-09-11 | 1998-09-11 | Copper alloy for semiconductor lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000087158A (en) |
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