JP2000068514A5 - - Google Patents
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- Publication number
- JP2000068514A5 JP2000068514A5 JP1998231855A JP23185598A JP2000068514A5 JP 2000068514 A5 JP2000068514 A5 JP 2000068514A5 JP 1998231855 A JP1998231855 A JP 1998231855A JP 23185598 A JP23185598 A JP 23185598A JP 2000068514 A5 JP2000068514 A5 JP 2000068514A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- single crystal
- electro
- manufacturing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23185598A JP2000068514A (ja) | 1998-08-18 | 1998-08-18 | 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 |
| US09/376,840 US6372558B1 (en) | 1998-08-18 | 1999-08-18 | Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23185598A JP2000068514A (ja) | 1998-08-18 | 1998-08-18 | 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000068514A JP2000068514A (ja) | 2000-03-03 |
| JP2000068514A5 true JP2000068514A5 (enExample) | 2006-11-02 |
Family
ID=16930084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23185598A Pending JP2000068514A (ja) | 1998-08-18 | 1998-08-18 | 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000068514A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100367638B1 (ko) * | 2000-03-28 | 2003-01-10 | 준 신 이 | ＣｅＯ₂박막과 반사방지막을 이용한 다결정 실리콘ＴＦＴ의 제조방법 |
| KR101259727B1 (ko) | 2008-10-24 | 2013-04-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8106400B2 (en) * | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
1998
- 1998-08-18 JP JP23185598A patent/JP2000068514A/ja active Pending
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