JP2000068514A - 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 - Google Patents

電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Info

Publication number
JP2000068514A
JP2000068514A JP23185598A JP23185598A JP2000068514A JP 2000068514 A JP2000068514 A JP 2000068514A JP 23185598 A JP23185598 A JP 23185598A JP 23185598 A JP23185598 A JP 23185598A JP 2000068514 A JP2000068514 A JP 2000068514A
Authority
JP
Japan
Prior art keywords
substrate
electro
optical device
gate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23185598A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000068514A5 (enExample
Inventor
Hideo Yamanaka
英雄 山中
Hisayoshi Yamoto
久良 矢元
Yuichi Sato
勇一 佐藤
Hajime Yagi
肇 矢木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP23185598A priority Critical patent/JP2000068514A/ja
Priority to US09/376,840 priority patent/US6372558B1/en
Publication of JP2000068514A publication Critical patent/JP2000068514A/ja
Publication of JP2000068514A5 publication Critical patent/JP2000068514A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Thin Film Transistor (AREA)
JP23185598A 1998-08-18 1998-08-18 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 Pending JP2000068514A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP23185598A JP2000068514A (ja) 1998-08-18 1998-08-18 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
US09/376,840 US6372558B1 (en) 1998-08-18 1999-08-18 Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23185598A JP2000068514A (ja) 1998-08-18 1998-08-18 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Publications (2)

Publication Number Publication Date
JP2000068514A true JP2000068514A (ja) 2000-03-03
JP2000068514A5 JP2000068514A5 (enExample) 2006-11-02

Family

ID=16930084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23185598A Pending JP2000068514A (ja) 1998-08-18 1998-08-18 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Country Status (1)

Country Link
JP (1) JP2000068514A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367638B1 (ko) * 2000-03-28 2003-01-10 준 신 이 ＣｅＯ₂박막과 반사방지막을 이용한 다결정 실리콘ＴＦＴ의 제조방법
JP2010123939A (ja) * 2008-10-24 2010-06-03 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2010123938A (ja) * 2008-10-24 2010-06-03 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367638B1 (ko) * 2000-03-28 2003-01-10 준 신 이 ＣｅＯ₂박막과 반사방지막을 이용한 다결정 실리콘ＴＦＴ의 제조방법
JP2010123939A (ja) * 2008-10-24 2010-06-03 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2010123938A (ja) * 2008-10-24 2010-06-03 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US9000431B2 (en) 2008-10-24 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9029851B2 (en) 2008-10-24 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
US9219158B2 (en) 2008-10-24 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9318512B2 (en) 2008-10-24 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9601603B2 (en) 2008-10-24 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10153380B2 (en) 2008-10-24 2018-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10170632B2 (en) 2008-10-24 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
US10763372B2 (en) 2008-10-24 2020-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with dual and single gate structure transistors
US11563124B2 (en) 2008-10-24 2023-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including flip-flop circuit which includes transistors
US12009434B2 (en) 2008-10-24 2024-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistors and method for manufacturing the same
US12477781B2 (en) 2008-10-24 2025-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Similar Documents

Publication Publication Date Title
JP2000101088A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
US6521525B2 (en) Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same
JP2000111945A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP4366732B2 (ja) 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
US6372558B1 (en) Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate
US20020066901A1 (en) Electrooptical device, substrate for driving electrooptical device and methods for making the same
JP2000231124A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000187243A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000180893A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000235355A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000231118A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP4300435B2 (ja) 電気光学装置の製造方法、及び電気光学装置用の駆動基板の製造方法
JP2000068514A (ja) 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
JP4228248B2 (ja) 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
JP2000231122A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP4366731B2 (ja) 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
JP2000111948A (ja) 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
JP2000214484A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000122090A (ja) 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
JP2000114540A (ja) 電気光学装置の製造方法及び電気光学装置用の製造方法
JP2000124459A (ja) 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
JP2000089249A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000155334A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000111944A (ja) 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000111949A (ja) 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050309

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060907

RD13 Notification of appointment of power of sub attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7433

Effective date: 20070125

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070216

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070312

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070405

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070913