JP2000066133A5 - - Google Patents

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Publication number
JP2000066133A5
JP2000066133A5 JP1999135991A JP13599199A JP2000066133A5 JP 2000066133 A5 JP2000066133 A5 JP 2000066133A5 JP 1999135991 A JP1999135991 A JP 1999135991A JP 13599199 A JP13599199 A JP 13599199A JP 2000066133 A5 JP2000066133 A5 JP 2000066133A5
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JP
Japan
Prior art keywords
laser beam
axis direction
adjusting
lenses
pair
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Pending
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JP1999135991A
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English (en)
Japanese (ja)
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JP2000066133A (ja
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Priority to JP11135991A priority Critical patent/JP2000066133A/ja
Priority claimed from JP11135991A external-priority patent/JP2000066133A/ja
Priority to US09/326,173 priority patent/US6172820B1/en
Publication of JP2000066133A publication Critical patent/JP2000066133A/ja
Publication of JP2000066133A5 publication Critical patent/JP2000066133A5/ja
Pending legal-status Critical Current

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JP11135991A 1998-06-08 1999-05-17 レ―ザ―光照射装置 Pending JP2000066133A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11135991A JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置
US09/326,173 US6172820B1 (en) 1998-06-08 1999-06-04 Laser irradiation device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15913398 1998-06-08
JP10-159133 1998-06-08
JP11135991A JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置

Publications (2)

Publication Number Publication Date
JP2000066133A JP2000066133A (ja) 2000-03-03
JP2000066133A5 true JP2000066133A5 (https=) 2006-06-29

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JP11135991A Pending JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置

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US (1) US6172820B1 (https=)
JP (1) JP2000066133A (https=)

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CN1200320C (zh) * 2000-11-27 2005-05-04 纽约市哥伦比亚大学托管会 用激光结晶化法加工衬底上半导体薄膜区域的方法和掩模投影系统
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JP4515088B2 (ja) * 2002-12-25 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
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KR101191837B1 (ko) * 2003-02-19 2012-10-18 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 순차적 측면 고상화 기술을 이용하여 결정화되는 복수의 반도체 박막을 가공하는 방법 및 장치
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
CN100541722C (zh) 2004-03-26 2009-09-16 株式会社半导体能源研究所 激光辐照方法和激光辐照装置
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US8304313B2 (en) * 2004-08-23 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US8395084B2 (en) 2005-05-02 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
JP5153086B2 (ja) * 2005-05-02 2013-02-27 株式会社半導体エネルギー研究所 レーザ照射装置
KR101368570B1 (ko) * 2005-08-16 2014-02-27 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막의 고수율 결정화
WO2007067541A2 (en) * 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
WO2007072837A1 (en) * 2005-12-20 2007-06-28 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
US8614471B2 (en) * 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
JP5385289B2 (ja) 2007-09-25 2014-01-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
KR20100105606A (ko) 2007-11-21 2010-09-29 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에피택셜하게 텍스쳐화된 후막의 제조를 위한 시스템 및 방법
KR101242094B1 (ko) * 2008-01-07 2013-03-11 가부시키가이샤 아이에이치아이 레이저 어닐링 방법 및 장치
US8569155B2 (en) * 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
KR101413370B1 (ko) * 2008-02-29 2014-06-30 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 결정질 막 제조 방법, 태양전지 형성 방법 및 이 방법에 의해 제조된 결정질 막 및 태양 전지
WO2009108936A1 (en) * 2008-02-29 2009-09-03 The Trustees Of Columbia University In The City Of New York Lithographic method of making uniform crystalline si films
JP5240764B2 (ja) * 2008-05-28 2013-07-17 株式会社日本製鋼所 レーザ光照射装置
CN102057467B (zh) * 2008-06-12 2013-02-13 株式会社Ihi 激光退火方法以及激光退火装置
DE102008029622B4 (de) * 2008-06-23 2018-05-09 Ihi Corporation Laserglühverfahren und Laserglühvorrichtung
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
KR101184430B1 (ko) 2009-09-16 2012-09-20 주식회사 제이미크론 도금방지막을 이용한 부분 도금 장치 및 부분 도금 방법
KR101116783B1 (ko) 2009-09-16 2012-03-05 주식회사 제이미크론 레이저를 이용한 부분 도금 장치 및 부분 도금 방법
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
KR101288993B1 (ko) * 2011-12-20 2013-08-16 삼성디스플레이 주식회사 레이저 어닐링 장치
JP5717146B2 (ja) * 2012-10-23 2015-05-13 株式会社日本製鋼所 レーザラインビーム改善装置およびレーザ処理装置
EP2966671B1 (en) * 2013-03-07 2022-08-31 Mitsubishi Electric Corporation Laser annealing device, and method of producing semiconductor device
KR102463885B1 (ko) * 2015-10-21 2022-11-07 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
CN109922919A (zh) * 2016-11-03 2019-06-21 株式会社半导体能源研究所 激光加工装置、叠层体加工装置及激光加工方法
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