JP2000039985A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000039985A5 JP2000039985A5 JP1999119999A JP11999999A JP2000039985A5 JP 2000039985 A5 JP2000039985 A5 JP 2000039985A5 JP 1999119999 A JP1999119999 A JP 1999119999A JP 11999999 A JP11999999 A JP 11999999A JP 2000039985 A5 JP2000039985 A5 JP 2000039985A5
- Authority
- JP
- Japan
- Prior art keywords
- write
- line
- storage element
- read
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US067702 | 1997-12-30 | ||
| US09/067,702 US6188633B1 (en) | 1998-04-28 | 1998-04-28 | Multi-port computer register file having shared word lines for read and write ports and storage elements that power down or enter a high-impedance state during write operations |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000039985A JP2000039985A (ja) | 2000-02-08 |
| JP2000039985A5 true JP2000039985A5 (enExample) | 2005-07-21 |
| JP3954238B2 JP3954238B2 (ja) | 2007-08-08 |
Family
ID=22077796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11999999A Expired - Fee Related JP3954238B2 (ja) | 1998-04-28 | 1999-04-27 | レジスタファイル |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US6188633B1 (enExample) |
| JP (1) | JP3954238B2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6188633B1 (en) * | 1998-04-28 | 2001-02-13 | Hewlett-Packard Company | Multi-port computer register file having shared word lines for read and write ports and storage elements that power down or enter a high-impedance state during write operations |
| US6564331B1 (en) * | 1999-09-24 | 2003-05-13 | Intel Corporation | Low power register file |
| US20030154363A1 (en) * | 2002-02-11 | 2003-08-14 | Soltis Donald C. | Stacked register aliasing in data hazard detection to reduce circuit |
| JP2004102799A (ja) * | 2002-09-11 | 2004-04-02 | Nec Electronics Corp | レジスタファイル及びレジスタファイルの設計方法 |
| US8108609B2 (en) * | 2007-12-04 | 2012-01-31 | International Business Machines Corporation | Structure for implementing dynamic refresh protocols for DRAM based cache |
| US20090144504A1 (en) * | 2007-12-04 | 2009-06-04 | International Business Machines Corporation | STRUCTURE FOR IMPLEMENTING REFRESHLESS SINGLE TRANSISTOR CELL eDRAM FOR HIGH PERFORMANCE MEMORY APPLICATIONS |
| US20090144507A1 (en) * | 2007-12-04 | 2009-06-04 | International Business Machines Corporation | APPARATUS AND METHOD FOR IMPLEMENTING REFRESHLESS SINGLE TRANSISTOR CELL eDRAM FOR HIGH PERFORMANCE MEMORY APPLICATIONS |
| US7882302B2 (en) * | 2007-12-04 | 2011-02-01 | International Business Machines Corporation | Method and system for implementing prioritized refresh of DRAM based cache |
| US7962695B2 (en) * | 2007-12-04 | 2011-06-14 | International Business Machines Corporation | Method and system for integrating SRAM and DRAM architecture in set associative cache |
| US8024513B2 (en) * | 2007-12-04 | 2011-09-20 | International Business Machines Corporation | Method and system for implementing dynamic refresh protocols for DRAM based cache |
| CN101620524B (zh) * | 2009-07-03 | 2011-08-10 | 中国人民解放军国防科学技术大学 | 支持矩阵整体读写操作的矩阵寄存器文件 |
| US9207995B2 (en) | 2010-11-03 | 2015-12-08 | International Business Machines Corporation | Mechanism to speed-up multithreaded execution by register file write port reallocation |
| US8432756B1 (en) * | 2011-10-18 | 2013-04-30 | Apple Inc. | Collision prevention in a dual port memory |
| US9384825B2 (en) | 2014-09-26 | 2016-07-05 | Qualcomm Incorporated | Multi-port memory circuits |
| CN108512783A (zh) * | 2018-03-22 | 2018-09-07 | 新华三技术有限公司 | 一种状态信息获取方法及设备 |
| US12498854B2 (en) * | 2023-07-11 | 2025-12-16 | Birad—Research & Development Company Ltd. | Physically-driven generation of many-ported storage arrays |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2615088B2 (ja) * | 1987-11-06 | 1997-05-28 | 株式会社日立製作所 | 半導体記憶装置 |
| US5222240A (en) * | 1990-02-14 | 1993-06-22 | Intel Corporation | Method and apparatus for delaying writing back the results of instructions to a processor |
| US5315178A (en) * | 1993-08-27 | 1994-05-24 | Hewlett-Packard Company | IC which can be used as a programmable logic cell array or as a register file |
| US5481495A (en) * | 1994-04-11 | 1996-01-02 | International Business Machines Corporation | Cells and read-circuits for high-performance register files |
| US5724299A (en) * | 1996-04-30 | 1998-03-03 | Sun Microsystems, Inc. | Multiport register file memory using small voltage swing for write operation |
| JPH11184674A (ja) * | 1997-12-24 | 1999-07-09 | Fujitsu Ltd | レジスタファイル |
| US6188633B1 (en) * | 1998-04-28 | 2001-02-13 | Hewlett-Packard Company | Multi-port computer register file having shared word lines for read and write ports and storage elements that power down or enter a high-impedance state during write operations |
-
1998
- 1998-04-28 US US09/067,702 patent/US6188633B1/en not_active Expired - Lifetime
-
1999
- 1999-04-27 JP JP11999999A patent/JP3954238B2/ja not_active Expired - Fee Related
-
2000
- 2000-10-17 US US09/690,934 patent/US6556501B1/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000039985A5 (enExample) | ||
| JP4493116B2 (ja) | 読み取り/書き込みアドレスバスを有するランダムアクセスメモリ並びに同メモリへの書き込み及び同メモリからの読み取り方法 | |
| CN1326150C (zh) | 同步猝发半导体存储器件 | |
| US5473574A (en) | Multi-port static random access memory with fast write-thru scheme | |
| JP4603103B2 (ja) | 内容参照メモリ | |
| US7269075B2 (en) | Method and apparatus for simultaneous differential data sensing and capture in a high speed memory | |
| US5491667A (en) | Sense amplifier with isolation to bit lines during sensing | |
| KR0184369B1 (ko) | 반도체 기억장치 | |
| CN101971263A (zh) | 伪双端口存储器中的地址多路复用 | |
| WO2009155474A3 (en) | Memory cell employing reduced voltage | |
| JP2010510615A5 (enExample) | ||
| JPH1055664A (ja) | ブロック書き込み時電力節減 | |
| JPH01138694A (ja) | メモリ装置 | |
| JP2832693B2 (ja) | 出力制御回路を備えたdram | |
| US6185656B1 (en) | Synchronous SRAM having pipelined enable and burst address generation | |
| JPS62293596A (ja) | 連想記憶装置 | |
| JP2006196166A (ja) | バースト動作が可能なsramメモリ装置 | |
| US6633503B2 (en) | Voltage differential sensing circuit and methods of using same | |
| US5729498A (en) | Reduced power consumption sram | |
| JPH1186557A (ja) | 同期型記憶装置および同期型記憶装置におけるデータ読み出し方法 | |
| JPH04177693A (ja) | 半導体メモリ装置 | |
| JP2001243764A (ja) | 半導体記憶装置 | |
| US7403446B1 (en) | Single late-write for standard synchronous SRAMs | |
| KR100340067B1 (ko) | 데이터에 대한 읽기 및 쓰기 동작을 동시에 수행할 수있는 단일 포트 메모리 구조의 메모리 장치 | |
| CN102394103A (zh) | 一种单端位线写入电路 |