JP2000036580A - 不揮発性半導体メモリセル及び不揮発性半導体メモリセルにおけるデータ書き込み制御方法 - Google Patents

不揮発性半導体メモリセル及び不揮発性半導体メモリセルにおけるデータ書き込み制御方法

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Publication number
JP2000036580A
JP2000036580A JP20501898A JP20501898A JP2000036580A JP 2000036580 A JP2000036580 A JP 2000036580A JP 20501898 A JP20501898 A JP 20501898A JP 20501898 A JP20501898 A JP 20501898A JP 2000036580 A JP2000036580 A JP 2000036580A
Authority
JP
Japan
Prior art keywords
electrode
memory element
memory cell
semiconductor memory
nonvolatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20501898A
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English (en)
Japanese (ja)
Other versions
JP2000036580A5 (enExample
Inventor
Takeshi Ogishi
毅 大岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP20501898A priority Critical patent/JP2000036580A/ja
Publication of JP2000036580A publication Critical patent/JP2000036580A/ja
Publication of JP2000036580A5 publication Critical patent/JP2000036580A5/ja
Pending legal-status Critical Current

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  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP20501898A 1998-07-21 1998-07-21 不揮発性半導体メモリセル及び不揮発性半導体メモリセルにおけるデータ書き込み制御方法 Pending JP2000036580A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20501898A JP2000036580A (ja) 1998-07-21 1998-07-21 不揮発性半導体メモリセル及び不揮発性半導体メモリセルにおけるデータ書き込み制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20501898A JP2000036580A (ja) 1998-07-21 1998-07-21 不揮発性半導体メモリセル及び不揮発性半導体メモリセルにおけるデータ書き込み制御方法

Publications (2)

Publication Number Publication Date
JP2000036580A true JP2000036580A (ja) 2000-02-02
JP2000036580A5 JP2000036580A5 (enExample) 2005-09-08

Family

ID=16500089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20501898A Pending JP2000036580A (ja) 1998-07-21 1998-07-21 不揮発性半導体メモリセル及び不揮発性半導体メモリセルにおけるデータ書き込み制御方法

Country Status (1)

Country Link
JP (1) JP2000036580A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100396470B1 (ko) * 2001-02-19 2003-09-03 삼성전자주식회사 비트라인 콘택패드를 갖는 불휘발성 메모리 장치 및 그제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100396470B1 (ko) * 2001-02-19 2003-09-03 삼성전자주식회사 비트라인 콘택패드를 갖는 불휘발성 메모리 장치 및 그제조방법

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