JP2000035480A - 放射線医学用間接ｘ線画像検出器 - Google Patents
放射線医学用間接ｘ線画像検出器Info
- Publication number
- JP2000035480A JP2000035480A JP11180725A JP18072599A JP2000035480A JP 2000035480 A JP2000035480 A JP 2000035480A JP 11180725 A JP11180725 A JP 11180725A JP 18072599 A JP18072599 A JP 18072599A JP 2000035480 A JP2000035480 A JP 2000035480A
- Authority
- JP
- Japan
- Prior art keywords
- image detector
- ray image
- selenium
- layer
- detector according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 61
- 239000011669 selenium Substances 0.000 claims abstract description 61
- 230000003287 optical effect Effects 0.000 claims abstract description 38
- 239000011159 matrix material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 15
- 229910052785 arsenic Inorganic materials 0.000 claims description 14
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000460 chlorine Substances 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 4
- 230000007613 environmental effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 2
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 235000009518 sodium iodide Nutrition 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 claims description 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 2
- 230000006870 function Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000026954 response to X-ray Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA2241779 | 1998-06-26 | ||
| CA2241779A CA2241779C (en) | 1998-06-26 | 1998-06-26 | Indirect x-ray image detector for radiology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000035480A true JP2000035480A (ja) | 2000-02-02 |
| JP2000035480A5 JP2000035480A5 (enExample) | 2006-01-26 |
Family
ID=4162593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11180725A Pending JP2000035480A (ja) | 1998-06-26 | 1999-06-25 | 放射線医学用間接ｘ線画像検出器 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6982425B1 (enExample) |
| EP (1) | EP0967655B1 (enExample) |
| JP (1) | JP2000035480A (enExample) |
| CA (1) | CA2241779C (enExample) |
| DE (1) | DE69941758D1 (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002286847A (ja) * | 2001-03-22 | 2002-10-03 | Reitekku:Kk | 半導体放射線検出装置 |
| JP2007142283A (ja) * | 2005-11-21 | 2007-06-07 | Fujifilm Corp | 放射線画像検出器および放射線画像検出器の製造方法 |
| US7795592B2 (en) | 2005-11-21 | 2010-09-14 | Fujifilm Corporation | Image detector and manufacturing method of the same |
| WO2012147813A1 (ja) * | 2011-04-26 | 2012-11-01 | 富士フイルム株式会社 | 放射線画像検出装置及び放射線撮影装置 |
| US8829450B2 (en) | 2008-12-19 | 2014-09-09 | Samsung Electronics Co., Ltd. | Method and apparatus for acquiring images created by penetration of radioactive ray |
| US8847168B2 (en) | 2010-06-21 | 2014-09-30 | Samsung Electronics Co., Ltd. | Large-scale X-ray detectors and methods of manufacturing the same |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2241779C (en) * | 1998-06-26 | 2010-02-09 | Ftni Inc. | Indirect x-ray image detector for radiology |
| CA2242743C (en) * | 1998-07-08 | 2002-12-17 | Ftni Inc. | Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging |
| FR2803394B1 (fr) | 1999-12-30 | 2003-04-25 | Thomson Tubes Electroniques | Systeme de detection d'image radiologique pour generateur de rayons x a balayage |
| AU2001244586A1 (en) * | 2000-04-04 | 2001-10-15 | Hamamatsu Photonics K.K. | Semiconductor energy detector |
| US6730900B2 (en) * | 2002-02-05 | 2004-05-04 | E-Phocus, Inc. | Camera with MOS or CMOS sensor array |
| JP4391079B2 (ja) * | 2002-11-28 | 2009-12-24 | 浜松ホトニクス株式会社 | 固体撮像装置及び放射線撮像装置 |
| JP2005012049A (ja) * | 2003-06-20 | 2005-01-13 | Shimadzu Corp | 放射線検出器およびそれを備えた放射線撮像装置 |
| KR20070107137A (ko) * | 2005-02-28 | 2007-11-06 | 오씨 외를리콘 발처스 악티엔게젤샤프트 | 감소된 픽셀 크로스 토크를 구비한 이미지 센서 장치의제조방법 |
| US7291842B2 (en) * | 2005-06-14 | 2007-11-06 | Varian Medical Systems Technologies, Inc. | Photoconductor imagers with sandwich structure |
| DE102005037290A1 (de) * | 2005-08-08 | 2007-02-22 | Siemens Ag | Flachbilddetektor |
| JP2008227036A (ja) * | 2007-03-12 | 2008-09-25 | Fujifilm Corp | 放射線平面検出器 |
| US8530848B2 (en) | 2011-08-22 | 2013-09-10 | Eastman Kodak Company | Radiation-sensitive substrate |
| US8445853B2 (en) | 2011-08-22 | 2013-05-21 | Eastman Kodak Company | Method of making a radiation-sensitive substrate |
| US8356758B1 (en) | 2012-04-25 | 2013-01-22 | Eastman Kodak Company | Making storage system having modifiable conductor and memory |
| US8745861B2 (en) | 2012-04-25 | 2014-06-10 | Eastman Kodak Company | Method of making a storage system having an environmentally-modifiable conductor |
| US8739399B2 (en) | 2012-04-25 | 2014-06-03 | Eastman Kodak Company | Making electronic storage system having code circuit |
| JP6099035B2 (ja) * | 2012-10-12 | 2017-03-22 | Ｎｌｔテクノロジー株式会社 | 光電変換装置及びその製造方法並びにｘ線画像検出装置 |
| CA3037960A1 (en) | 2016-11-30 | 2018-06-07 | The Research Foundation For The State University Of New York | Hybrid active matrix flat panel detector system and method |
| WO2018202465A1 (en) | 2017-05-01 | 2018-11-08 | Koninklijke Philips N.V. | Multi-layer radiation detector |
| EP3495849A1 (en) * | 2017-12-11 | 2019-06-12 | Koninklijke Philips N.V. | Multilayer pixelated scintillator with enlarged fill factor |
| TWI652945B (zh) | 2017-12-20 | 2019-03-01 | 財團法人工業技術研究院 | 具有自動曝光偵測能力的輻射影像器以及其方法 |
| EP3620826A1 (en) * | 2018-09-10 | 2020-03-11 | Koninklijke Philips N.V. | Multi-piece mono-layer radiation detector |
| FR3119708B1 (fr) * | 2021-02-11 | 2023-08-25 | Trixell | Détecteur numérique à étages de conversion superposés |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989004063A1 (fr) * | 1987-10-21 | 1989-05-05 | Hitachi, Ltd. | Element photorecepteur et procede d'utilisation |
| JPH01192177A (ja) * | 1988-01-28 | 1989-08-02 | Hitachi Ltd | 受光素子の製造方法 |
| EP0588397A2 (de) * | 1992-08-17 | 1994-03-23 | Philips Patentverwaltung GmbH | Röntgenbilddetektor |
| JPH0763859A (ja) * | 1993-08-27 | 1995-03-10 | Shimadzu Corp | 放射線２次元検出器 |
| JPH09503351A (ja) * | 1994-07-20 | 1997-03-31 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | イメージ検出器 |
| JPH09331051A (ja) * | 1995-06-16 | 1997-12-22 | S I I R D Center:Kk | 光電変換半導体装置 |
| JPH1065136A (ja) * | 1996-08-13 | 1998-03-06 | Dainippon Printing Co Ltd | 光センサー、情報記録装置及び情報記録再生方法 |
| JPH10197647A (ja) * | 1997-01-14 | 1998-07-31 | Toshiba Corp | Ｘ線画像検出器 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4230510A (en) * | 1977-11-21 | 1980-10-28 | General Electric Company | Distributed phosphor scintillator structures |
| US4363969A (en) | 1980-07-16 | 1982-12-14 | Ong Poen S | Light switched segmented tomography detector |
| US4883956A (en) * | 1985-12-23 | 1989-11-28 | Schlumberger Technology Corporation | Methods and apparatus for gamma-ray spectroscopy and like measurements |
| US5196702A (en) * | 1987-10-21 | 1993-03-23 | Hitachi, Ltd. | Photo-sensor and method for operating the same |
| US5039858A (en) * | 1990-01-31 | 1991-08-13 | Anderson David F | Divalent fluoride doped cerium fluoride scintillator |
| US5171998A (en) | 1990-06-14 | 1992-12-15 | Engdahl John C | Gamma ray imaging detector |
| US5132539A (en) * | 1991-08-29 | 1992-07-21 | General Electric Company | Planar X-ray imager having a moisture-resistant sealing structure |
| US5198673A (en) * | 1992-01-23 | 1993-03-30 | General Electric Company | Radiation image detector with optical gain selenium photosensors |
| US5515411A (en) | 1993-03-31 | 1996-05-07 | Shimadzu Corporation | X-ray image pickup tube |
| AU6574694A (en) * | 1993-04-28 | 1994-11-21 | University Of Surrey | Radiation detectors |
| US5596198A (en) * | 1994-04-22 | 1997-01-21 | The Regents, University Of California | Gamma ray camera |
| JP4063870B2 (ja) * | 1995-04-28 | 2008-03-19 | サニーブルック・ホスピタル | アクティブマトリックスｘ線撮像アレイ |
| US5585638A (en) | 1995-12-14 | 1996-12-17 | General Electric Company | X-ray detector for automatic exposure control of an imaging apparatus |
| US5892222A (en) * | 1996-04-18 | 1999-04-06 | Loral Fairchild Corporation | Broadband multicolor photon counter for low light detection and imaging |
| CA2184667C (en) * | 1996-09-03 | 2000-06-20 | Bradley Trent Polischuk | Multilayer plate for x-ray imaging and method of producing same |
| DE19640946A1 (de) * | 1996-10-04 | 1998-04-16 | Philips Patentverwaltung | Röntgenaufnahme-Anordnung mit einem Photoleiter |
| CA2241779C (en) * | 1998-06-26 | 2010-02-09 | Ftni Inc. | Indirect x-ray image detector for radiology |
-
1998
- 1998-06-26 CA CA2241779A patent/CA2241779C/en not_active Expired - Lifetime
-
1999
- 1999-06-07 DE DE69941758T patent/DE69941758D1/de not_active Expired - Lifetime
- 1999-06-07 EP EP99304399A patent/EP0967655B1/en not_active Expired - Lifetime
- 1999-06-17 US US09/334,671 patent/US6982425B1/en not_active Expired - Lifetime
- 1999-06-25 JP JP11180725A patent/JP2000035480A/ja active Pending
-
2005
- 2005-10-04 US US11/242,574 patent/US7692157B2/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989004063A1 (fr) * | 1987-10-21 | 1989-05-05 | Hitachi, Ltd. | Element photorecepteur et procede d'utilisation |
| JPH01192177A (ja) * | 1988-01-28 | 1989-08-02 | Hitachi Ltd | 受光素子の製造方法 |
| EP0588397A2 (de) * | 1992-08-17 | 1994-03-23 | Philips Patentverwaltung GmbH | Röntgenbilddetektor |
| JPH0763859A (ja) * | 1993-08-27 | 1995-03-10 | Shimadzu Corp | 放射線２次元検出器 |
| JPH09503351A (ja) * | 1994-07-20 | 1997-03-31 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | イメージ検出器 |
| JPH09331051A (ja) * | 1995-06-16 | 1997-12-22 | S I I R D Center:Kk | 光電変換半導体装置 |
| JPH1065136A (ja) * | 1996-08-13 | 1998-03-06 | Dainippon Printing Co Ltd | 光センサー、情報記録装置及び情報記録再生方法 |
| JPH10197647A (ja) * | 1997-01-14 | 1998-07-31 | Toshiba Corp | Ｘ線画像検出器 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002286847A (ja) * | 2001-03-22 | 2002-10-03 | Reitekku:Kk | 半導体放射線検出装置 |
| JP2007142283A (ja) * | 2005-11-21 | 2007-06-07 | Fujifilm Corp | 放射線画像検出器および放射線画像検出器の製造方法 |
| US7795592B2 (en) | 2005-11-21 | 2010-09-14 | Fujifilm Corporation | Image detector and manufacturing method of the same |
| US8829450B2 (en) | 2008-12-19 | 2014-09-09 | Samsung Electronics Co., Ltd. | Method and apparatus for acquiring images created by penetration of radioactive ray |
| US8866091B2 (en) | 2008-12-19 | 2014-10-21 | Samsung Electronics Co., Ltd. | Method and apparatus for acquiring images created by penetration of radioactive ray |
| US8847168B2 (en) | 2010-06-21 | 2014-09-30 | Samsung Electronics Co., Ltd. | Large-scale X-ray detectors and methods of manufacturing the same |
| WO2012147813A1 (ja) * | 2011-04-26 | 2012-11-01 | 富士フイルム株式会社 | 放射線画像検出装置及び放射線撮影装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7692157B2 (en) | 2010-04-06 |
| EP0967655A2 (en) | 1999-12-29 |
| US6982425B1 (en) | 2006-01-03 |
| DE69941758D1 (de) | 2010-01-21 |
| EP0967655B1 (en) | 2009-12-09 |
| EP0967655A3 (en) | 2000-06-28 |
| US20060027760A1 (en) | 2006-02-09 |
| CA2241779C (en) | 2010-02-09 |
| CA2241779A1 (en) | 1999-12-26 |
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