JP2000031013A - 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板 - Google Patents
回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板Info
- Publication number
- JP2000031013A JP2000031013A JP19553898A JP19553898A JP2000031013A JP 2000031013 A JP2000031013 A JP 2000031013A JP 19553898 A JP19553898 A JP 19553898A JP 19553898 A JP19553898 A JP 19553898A JP 2000031013 A JP2000031013 A JP 2000031013A
- Authority
- JP
- Japan
- Prior art keywords
- circuit pattern
- transfer plate
- conductive film
- laser beam
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008439 repair process Effects 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims description 44
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000007547 defect Effects 0.000 claims abstract description 30
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 14
- 239000003550 marker Substances 0.000 claims description 9
- 230000002950 deficient Effects 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 30
- 239000011521 glass Substances 0.000 description 24
- 238000000576 coating method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 150000004696 coordination complex Chemical class 0.000 description 5
- 238000007689 inspection Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19553898A JP2000031013A (ja) | 1998-07-10 | 1998-07-10 | 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19553898A JP2000031013A (ja) | 1998-07-10 | 1998-07-10 | 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000031013A true JP2000031013A (ja) | 2000-01-28 |
| JP2000031013A5 JP2000031013A5 (enExample) | 2005-10-27 |
Family
ID=16342765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19553898A Pending JP2000031013A (ja) | 1998-07-10 | 1998-07-10 | 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000031013A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6436602B1 (en) * | 1999-06-30 | 2002-08-20 | International Business Machines Corporation | Method of repairing a defective portion in an electronic device |
| KR20030025148A (ko) * | 2001-09-19 | 2003-03-28 | 노바테크 주식회사 | Plasma Display Panel의 셀 결함 수리방법 및 장치 |
| WO2007136183A1 (en) * | 2006-05-18 | 2007-11-29 | Phicom Corporation | Method of repairing a polymer mask |
| JP2008053698A (ja) * | 2006-07-28 | 2008-03-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2009251120A (ja) * | 2008-04-02 | 2009-10-29 | Ntn Corp | パターン修正方法およびパターン部品 |
| JP2009251119A (ja) * | 2008-04-02 | 2009-10-29 | Ntn Corp | 転写部材 |
| US7994021B2 (en) | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP2012515256A (ja) * | 2009-01-14 | 2012-07-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 少なくとも一つの電気伝導性フィルムを基板上へ蒸着させる方法 |
| TWI385273B (zh) * | 2007-03-30 | 2013-02-11 | Ind Tech Res Inst | 缺陷修補裝置及靶材結構 |
-
1998
- 1998-07-10 JP JP19553898A patent/JP2000031013A/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6436602B1 (en) * | 1999-06-30 | 2002-08-20 | International Business Machines Corporation | Method of repairing a defective portion in an electronic device |
| US6809332B2 (en) * | 1999-06-30 | 2004-10-26 | International Business Machines Corporation | Electronic device and defect repair method thereof |
| US7126232B2 (en) | 1999-06-30 | 2006-10-24 | Au Optronics Corporation | Defect repair apparatus for an electronic device |
| KR20030025148A (ko) * | 2001-09-19 | 2003-03-28 | 노바테크 주식회사 | Plasma Display Panel의 셀 결함 수리방법 및 장치 |
| WO2007136183A1 (en) * | 2006-05-18 | 2007-11-29 | Phicom Corporation | Method of repairing a polymer mask |
| JP2008053698A (ja) * | 2006-07-28 | 2008-03-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US7994021B2 (en) | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US8703579B2 (en) | 2006-07-28 | 2014-04-22 | Semiconductor Energy Laborator Co., Ltd. | Method of manufacturing semiconductor device |
| TWI385273B (zh) * | 2007-03-30 | 2013-02-11 | Ind Tech Res Inst | 缺陷修補裝置及靶材結構 |
| JP2009251120A (ja) * | 2008-04-02 | 2009-10-29 | Ntn Corp | パターン修正方法およびパターン部品 |
| JP2009251119A (ja) * | 2008-04-02 | 2009-10-29 | Ntn Corp | 転写部材 |
| JP2012515256A (ja) * | 2009-01-14 | 2012-07-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 少なくとも一つの電気伝導性フィルムを基板上へ蒸着させる方法 |
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Legal Events
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Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050527 |
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| A521 | Written amendment |
Effective date: 20060515 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
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| A02 | Decision of refusal |
Effective date: 20060607 Free format text: JAPANESE INTERMEDIATE CODE: A02 |