JP2000031013A5 - - Google Patents
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- Publication number
- JP2000031013A5 JP2000031013A5 JP1998195538A JP19553898A JP2000031013A5 JP 2000031013 A5 JP2000031013 A5 JP 2000031013A5 JP 1998195538 A JP1998195538 A JP 1998195538A JP 19553898 A JP19553898 A JP 19553898A JP 2000031013 A5 JP2000031013 A5 JP 2000031013A5
- Authority
- JP
- Japan
- Prior art keywords
- circuit pattern
- transfer plate
- substrate
- pattern
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 description 48
- 239000010408 film Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 33
- 230000007547 defect Effects 0.000 description 29
- 239000011248 coating agent Substances 0.000 description 27
- 238000000576 coating method Methods 0.000 description 27
- 239000011521 glass Substances 0.000 description 25
- 230000008439 repair process Effects 0.000 description 20
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 230000002950 deficient Effects 0.000 description 8
- 239000003550 marker Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 150000004696 coordination complex Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19553898A JP2000031013A (ja) | 1998-07-10 | 1998-07-10 | 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19553898A JP2000031013A (ja) | 1998-07-10 | 1998-07-10 | 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000031013A JP2000031013A (ja) | 2000-01-28 |
| JP2000031013A5 true JP2000031013A5 (enExample) | 2005-10-27 |
Family
ID=16342765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19553898A Pending JP2000031013A (ja) | 1998-07-10 | 1998-07-10 | 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000031013A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4653867B2 (ja) * | 1999-06-30 | 2011-03-16 | エーユー オプトロニクス コーポレイション | 電子部品の欠陥修復方法 |
| KR20030025148A (ko) * | 2001-09-19 | 2003-03-28 | 노바테크 주식회사 | Plasma Display Panel의 셀 결함 수리방법 및 장치 |
| WO2007136183A1 (en) * | 2006-05-18 | 2007-11-29 | Phicom Corporation | Method of repairing a polymer mask |
| US7994021B2 (en) | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP5314857B2 (ja) * | 2006-07-28 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI385273B (zh) * | 2007-03-30 | 2013-02-11 | Ind Tech Res Inst | 缺陷修補裝置及靶材結構 |
| JP2009251119A (ja) * | 2008-04-02 | 2009-10-29 | Ntn Corp | 転写部材 |
| JP5111206B2 (ja) * | 2008-04-02 | 2013-01-09 | Ｎｔｎ株式会社 | パターン修正方法およびパターン部品 |
| CN102282693B (zh) * | 2009-01-14 | 2013-10-23 | 皇家飞利浦电子股份有限公司 | 用于在衬底上沉积至少一个导电膜的方法和系统 |
-
1998
- 1998-07-10 JP JP19553898A patent/JP2000031013A/ja active Pending
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