JP2000022213A5 - - Google Patents
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- Publication number
- JP2000022213A5 JP2000022213A5 JP1998183460A JP18346098A JP2000022213A5 JP 2000022213 A5 JP2000022213 A5 JP 2000022213A5 JP 1998183460 A JP1998183460 A JP 1998183460A JP 18346098 A JP18346098 A JP 18346098A JP 2000022213 A5 JP2000022213 A5 JP 2000022213A5
- Authority
- JP
- Japan
- Prior art keywords
- groove
- gallium nitride
- substrate
- based semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 31
- 229910002601 GaN Inorganic materials 0.000 claims description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18346098A JP2000022213A (ja) | 1998-06-30 | 1998-06-30 | 窒化ガリウム系半導体素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18346098A JP2000022213A (ja) | 1998-06-30 | 1998-06-30 | 窒化ガリウム系半導体素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000022213A JP2000022213A (ja) | 2000-01-21 |
| JP2000022213A5 true JP2000022213A5 (cg-RX-API-DMAC7.html) | 2005-10-20 |
Family
ID=16136176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18346098A Pending JP2000022213A (ja) | 1998-06-30 | 1998-06-30 | 窒化ガリウム系半導体素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000022213A (cg-RX-API-DMAC7.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1690301B1 (en) | 2003-11-12 | 2012-08-15 | Cree, Inc. | Methods of processing semiconductor wafer backsides having light emitting diodes (leds) thereon |
| US7951625B2 (en) * | 2007-02-21 | 2011-05-31 | Panasonic Corporation | Semiconductor light emitting element and method for manufacturing semiconductor light emitting device |
| US8357996B2 (en) | 2009-11-17 | 2013-01-22 | Cree, Inc. | Devices with crack stops |
| KR20160032221A (ko) | 2013-07-18 | 2016-03-23 | 코닌클리케 필립스 엔.브이. | 발광 디바이스들의 웨이퍼의 다이싱 |
| JP2015050390A (ja) | 2013-09-03 | 2015-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN111223771A (zh) * | 2020-03-10 | 2020-06-02 | 江苏丽隽功率半导体有限公司 | 一种垂直型硅基氮化镓功率器件减薄方法 |
| CN112287543B (zh) * | 2020-10-28 | 2024-12-06 | 华天科技（西安）有限公司 | 一种氮化镓晶圆生产工艺参数设计方法 |
| CN113725069B (zh) * | 2021-08-27 | 2026-05-05 | 华天科技（西安）有限公司 | 一种晶圆贴膜工艺优化方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63188808A (ja) * | 1987-01-30 | 1988-08-04 | Nec Kansai Ltd | 磁気ヘツドの製造方法 |
| JP2780618B2 (ja) * | 1993-11-06 | 1998-07-30 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体チップの製造方法 |
| JP3199594B2 (ja) * | 1995-02-10 | 2001-08-20 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子の光共振面の形成方法 |
| JPH08274371A (ja) * | 1995-03-31 | 1996-10-18 | Toyoda Gosei Co Ltd | 半導体発光素子及びその製造方法 |
| JP3250411B2 (ja) * | 1995-04-07 | 2002-01-28 | ソニー株式会社 | 半導体装置の製造方法 |
| JPH1027769A (ja) * | 1996-07-10 | 1998-01-27 | Toshiba Corp | 半導体チップとその製造方法 |
| JP3604550B2 (ja) * | 1997-12-16 | 2004-12-22 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
-
1998
- 1998-06-30 JP JP18346098A patent/JP2000022213A/ja active Pending
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