JP2000021714A - 露光方法および装置、ならびにデバイス製造方法 - Google Patents

露光方法および装置、ならびにデバイス製造方法

Info

Publication number
JP2000021714A
JP2000021714A JP10184044A JP18404498A JP2000021714A JP 2000021714 A JP2000021714 A JP 2000021714A JP 10184044 A JP10184044 A JP 10184044A JP 18404498 A JP18404498 A JP 18404498A JP 2000021714 A JP2000021714 A JP 2000021714A
Authority
JP
Japan
Prior art keywords
exposure
mask
wafer
pattern
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10184044A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000021714A5 (https=
Inventor
Akiyoshi Suzuki
章義 鈴木
Minoru Yoshii
実 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP10184044A priority Critical patent/JP2000021714A/ja
Priority to US09/330,157 priority patent/US6714302B2/en
Publication of JP2000021714A publication Critical patent/JP2000021714A/ja
Publication of JP2000021714A5 publication Critical patent/JP2000021714A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10184044A 1998-06-30 1998-06-30 露光方法および装置、ならびにデバイス製造方法 Pending JP2000021714A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10184044A JP2000021714A (ja) 1998-06-30 1998-06-30 露光方法および装置、ならびにデバイス製造方法
US09/330,157 US6714302B2 (en) 1998-06-30 1999-06-11 Aligning method, aligner, and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10184044A JP2000021714A (ja) 1998-06-30 1998-06-30 露光方法および装置、ならびにデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2000021714A true JP2000021714A (ja) 2000-01-21
JP2000021714A5 JP2000021714A5 (https=) 2005-10-20

Family

ID=16146390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10184044A Pending JP2000021714A (ja) 1998-06-30 1998-06-30 露光方法および装置、ならびにデバイス製造方法

Country Status (2)

Country Link
US (1) US6714302B2 (https=)
JP (1) JP2000021714A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305987A (ja) * 2006-05-04 2007-11-22 Asml Netherlands Bv 干渉露光及び他の露光を用いるリソグラフィ装置及びデバイス製造方法
JP2008205309A (ja) * 2007-02-21 2008-09-04 Canon Inc 露光装置
CN102626829A (zh) * 2011-08-16 2012-08-08 北京京东方光电科技有限公司 基板的激光修复装置以及激光修复方法
US9507248B2 (en) 2011-11-29 2016-11-29 Gigaphoton Inc. Two-beam interference apparatus and two-beam interference exposure system
JP2025073689A (ja) * 2023-10-27 2025-05-13 キヤノン株式会社 情報処理装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246281A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられるレチクル並びにウェハ
US7030984B2 (en) * 2002-05-23 2006-04-18 Therma-Wave, Inc. Fast wafer positioning method for optical metrology
CN110966937B (zh) * 2019-12-18 2021-03-09 哈尔滨工业大学 一种基于激光视觉传感的大型构件三维构形拼接方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4881100A (en) * 1985-12-10 1989-11-14 Canon Kabushiki Kaisha Alignment method
US4708466A (en) * 1986-02-07 1987-11-24 Canon Kabushiki Kaisha Exposure apparatus
JPH03155112A (ja) * 1989-11-13 1991-07-03 Nikon Corp 露光条件測定方法
JP3173025B2 (ja) 1991-02-22 2001-06-04 キヤノン株式会社 露光方法及び半導体素子の製造方法
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305987A (ja) * 2006-05-04 2007-11-22 Asml Netherlands Bv 干渉露光及び他の露光を用いるリソグラフィ装置及びデバイス製造方法
JP2008205309A (ja) * 2007-02-21 2008-09-04 Canon Inc 露光装置
CN102626829A (zh) * 2011-08-16 2012-08-08 北京京东方光电科技有限公司 基板的激光修复装置以及激光修复方法
US9507248B2 (en) 2011-11-29 2016-11-29 Gigaphoton Inc. Two-beam interference apparatus and two-beam interference exposure system
JP2025073689A (ja) * 2023-10-27 2025-05-13 キヤノン株式会社 情報処理装置

Also Published As

Publication number Publication date
US20020024671A1 (en) 2002-02-28
US6714302B2 (en) 2004-03-30

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