ITMI951442A0 - Struttura a semiconduttore laterale per la formazione di una limitazione di tensione compensata in temperatura - Google Patents

Struttura a semiconduttore laterale per la formazione di una limitazione di tensione compensata in temperatura

Info

Publication number
ITMI951442A0
ITMI951442A0 ITMI951442A ITMI951442A ITMI951442A0 IT MI951442 A0 ITMI951442 A0 IT MI951442A0 IT MI951442 A ITMI951442 A IT MI951442A IT MI951442 A ITMI951442 A IT MI951442A IT MI951442 A0 ITMI951442 A0 IT MI951442A0
Authority
IT
Italy
Prior art keywords
formation
semiconductor structure
temperature compensated
side semiconductor
compensated voltage
Prior art date
Application number
ITMI951442A
Other languages
English (en)
Inventor
Alfred Goerlach
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI951442A0 publication Critical patent/ITMI951442A0/it
Publication of ITMI951442A1 publication Critical patent/ITMI951442A1/it
Application granted granted Critical
Publication of IT1275483B publication Critical patent/IT1275483B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cable Accessories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
ITMI951442A 1994-07-06 1995-07-05 Struttura a semiconduttore laterale per la formazione di una limitazione di tensione compensata in temperatura IT1275483B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4423619A DE4423619A1 (de) 1994-07-06 1994-07-06 Laterale Halbleiterstruktur zur Bildung einer temperaturkompensierten Spannungsbegrenzung

Publications (3)

Publication Number Publication Date
ITMI951442A0 true ITMI951442A0 (it) 1995-07-05
ITMI951442A1 ITMI951442A1 (it) 1997-01-05
IT1275483B IT1275483B (it) 1997-08-07

Family

ID=6522341

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI951442A IT1275483B (it) 1994-07-06 1995-07-05 Struttura a semiconduttore laterale per la formazione di una limitazione di tensione compensata in temperatura

Country Status (7)

Country Link
US (1) US6262466B1 (it)
JP (1) JPH09502573A (it)
AU (1) AU693568B2 (it)
BR (1) BR9506027A (it)
DE (1) DE4423619A1 (it)
IT (1) IT1275483B (it)
WO (1) WO1996001501A1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2404296A1 (en) * 2000-03-22 2001-09-27 University Of Massachusetts Nanocylinder arrays
EP1352989A1 (de) * 2002-04-10 2003-10-15 Siemens Aktiengesellschaft Bauteil mit einer Maskierungsschicht
US7439592B2 (en) * 2004-12-13 2008-10-21 Broadcom Corporation ESD protection for high voltage applications

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL191525C (nl) 1977-02-02 1995-08-21 Shinkokai Zaidan Hojin Handot Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype.
JPS5825264A (ja) 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS59181679A (ja) 1983-03-31 1984-10-16 Nippon Denso Co Ltd 半導体装置
GB2193596A (en) * 1986-08-08 1988-02-10 Philips Electronic Associated A semiconductor diode
DE3930697A1 (de) 1989-09-14 1991-03-28 Bosch Gmbh Robert Steuerbare temperaturkompensierte spannungsbegrenzungseinrichtung
FR2664744B1 (fr) * 1990-07-16 1993-08-06 Sgs Thomson Microelectronics Diode pin a faible surtension initiale.
JP3321185B2 (ja) * 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
US5969400A (en) * 1995-03-15 1999-10-19 Kabushiki Kaisha Toshiba High withstand voltage semiconductor device

Also Published As

Publication number Publication date
ITMI951442A1 (it) 1997-01-05
AU693568B2 (en) 1998-07-02
BR9506027A (pt) 1997-10-14
US6262466B1 (en) 2001-07-17
IT1275483B (it) 1997-08-07
AU2731695A (en) 1996-01-25
WO1996001501A1 (de) 1996-01-18
JPH09502573A (ja) 1997-03-11
DE4423619A1 (de) 1996-01-11

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