DE69619604T2 - Halbleiter mit integriertem Kühler - Google Patents

Halbleiter mit integriertem Kühler

Info

Publication number
DE69619604T2
DE69619604T2 DE69619604T DE69619604T DE69619604T2 DE 69619604 T2 DE69619604 T2 DE 69619604T2 DE 69619604 T DE69619604 T DE 69619604T DE 69619604 T DE69619604 T DE 69619604T DE 69619604 T2 DE69619604 T2 DE 69619604T2
Authority
DE
Germany
Prior art keywords
semiconductors
coolers
integrated
integrated coolers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69619604T
Other languages
English (en)
Other versions
DE69619604D1 (de
Inventor
Sylvain Delage
Thomson-Csf Cassette
Herve Blanck
Eric Chartier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Publication of DE69619604D1 publication Critical patent/DE69619604D1/de
Application granted granted Critical
Publication of DE69619604T2 publication Critical patent/DE69619604T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5221—Crossover interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69619604T 1995-07-25 1996-07-19 Halbleiter mit integriertem Kühler Expired - Lifetime DE69619604T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9508994A FR2737342B1 (fr) 1995-07-25 1995-07-25 Composant semiconducteur avec dissipateur thermique integre

Publications (2)

Publication Number Publication Date
DE69619604D1 DE69619604D1 (de) 2002-04-11
DE69619604T2 true DE69619604T2 (de) 2002-08-22

Family

ID=9481335

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69619604T Expired - Lifetime DE69619604T2 (de) 1995-07-25 1996-07-19 Halbleiter mit integriertem Kühler

Country Status (7)

Country Link
US (1) US5719433A (de)
EP (1) EP0756322B1 (de)
JP (1) JPH0945704A (de)
KR (1) KR970008669A (de)
DE (1) DE69619604T2 (de)
FR (1) FR2737342B1 (de)
TW (1) TW317025B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8093713B2 (en) 2007-02-09 2012-01-10 Infineon Technologies Ag Module with silicon-based layer
US8097936B2 (en) 2007-02-27 2012-01-17 Infineon Technologies Ag Component, power component, apparatus, method of manufacturing a component, and method of manufacturing a power semiconductor component

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949144A (en) * 1996-05-20 1999-09-07 Harris Corporation Pre-bond cavity air bridge
KR100447151B1 (ko) * 1996-12-31 2004-11-03 엘지전자 주식회사 디지탈패킷데이터의클럭및타이밍복구장치
KR100447155B1 (ko) * 1997-02-18 2004-10-14 엘지전자 주식회사 디지탈패킷데이터의클럭및타이밍복구장치
KR100447156B1 (ko) * 1997-02-18 2004-10-14 엘지전자 주식회사 디지탈패킷데이터의클럭및타이밍복구장치
FR2764118B1 (fr) * 1997-05-30 2000-08-04 Thomson Csf Transistor bipolaire stabilise avec elements isolants electriques
US6051871A (en) * 1998-06-30 2000-04-18 The Whitaker Corporation Heterojunction bipolar transistor having improved heat dissipation
FR2793953B1 (fr) 1999-05-21 2002-08-09 Thomson Csf Capacite thermique pour composant electronique fonctionnant en impulsions longues
US6376898B1 (en) * 1999-08-02 2002-04-23 Matsushita Electric Industrial Co., Ltd. Bipolar transistor layout with minimized area and improved heat dissipation
TW561799B (en) 1999-08-11 2003-11-11 Fujikura Ltd Chip assembly module of bump connection type using a multi-layer printed circuit substrate
FR2803102B1 (fr) * 1999-12-23 2002-03-22 Thomson Csf Transistor bipolaire a heterojonction a collecteur en haut et procede de realisation
SE520109C2 (sv) * 2000-05-17 2003-05-27 Ericsson Telefon Ab L M Effekttransistorer för radiofrekvenser
US6527422B1 (en) * 2000-08-17 2003-03-04 Power Signal Technologies, Inc. Solid state light with solar shielded heatsink
KR100344103B1 (ko) * 2000-09-04 2002-07-24 에피밸리 주식회사 질화갈륨계 결정 보호막을 형성한 반도체 소자 및 그 제조방법
DE10133362A1 (de) * 2001-07-10 2003-01-30 Infineon Technologies Ag Transistorzelle
WO2003009392A1 (fr) * 2001-07-17 2003-01-30 Kabushiki Kaisha Watanabe Shoko Dispositif a semi-conducteur et son procede de fabrication et systeme d'application de ce dispositif
CN1998094B (zh) 2004-04-07 2012-12-26 霆激技术有限公司 半导体发光二极管上的反射层的制造
US8916966B2 (en) * 2004-09-28 2014-12-23 Triquint Semiconductor, Inc. Integrated circuit including a heat dissipation structure
SG131803A1 (en) * 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
SG133432A1 (en) 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
US10032690B2 (en) 2015-02-24 2018-07-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor structure including a thermally conductive, electrically insulating layer
US10319830B2 (en) * 2017-01-24 2019-06-11 Qualcomm Incorporated Heterojunction bipolar transistor power amplifier with backside thermal heatsink
FR3069704B1 (fr) 2017-07-27 2019-09-20 Thales Transistor a base metallique et comprenant des materiaux iii-v
US10332805B2 (en) * 2017-10-30 2019-06-25 Avago Technologies International Sales Pte. Limited Semiconductor structure with strain reduction
CN112105141B (zh) * 2020-09-17 2021-12-31 湖南维胜科技电路板有限公司 一种多层pcb电路板及其打孔装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631719A (en) * 1969-07-25 1972-01-04 Henri Charvier Fluid speed measuring system
FR2109513A5 (de) * 1970-10-30 1972-05-26 Thomson Csf
US3956820A (en) * 1975-02-26 1976-05-18 Rca Corporation Method of manufacturing a semiconductor device having a lead bonded to a surface thereof
JPS52116185A (en) * 1976-03-26 1977-09-29 Hitachi Ltd Mesa-type semiconductor laser
FR2388371A1 (fr) * 1977-04-20 1978-11-17 Thomson Csf Procede d'alignement, dans un photorepeteur, d'une plaquette semi-conductrice et des motifs a y projeter et photorepeteur mettant en oeuvre un tel procede
FR2507797A1 (fr) * 1981-06-16 1982-12-17 Inf Milit Spatiale Aeronaut Dispositif stabilise d'asservissement par tout ou rien a periode constante et dispositif d'alimentation electrique comportant un tel dispositif d'asservissement
FR2585183B1 (fr) * 1985-07-19 1987-10-09 Thomson Csf Procede de fabrication d'un detecteur d'image lumineuse et detecteur matriciel bidimensionnel obtenu par ce procede
FR2586859B1 (fr) * 1985-08-27 1987-11-20 Thomson Csf Procede de fabrication d'un transistor de commande pour ecran plat de visualisation et element de commande realise selon ce procede
FR2605442B1 (fr) * 1986-10-17 1988-12-09 Thomson Csf Ecran de visualisation electrooptique a transistors de commande et procede de realisation
US4800420A (en) * 1987-05-14 1989-01-24 Hughes Aircraft Company Two-terminal semiconductor diode arrangement
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
JPH02220464A (ja) * 1989-02-22 1990-09-03 Toshiba Corp 半導体装置及びその製造方法
JPH03252155A (ja) * 1990-02-28 1991-11-11 Narumi China Corp 半導体パッケージ
FR2659494B1 (fr) * 1990-03-09 1996-12-06 Thomson Composants Microondes Composant semiconducteur de puissance, dont la puce est montee a l'envers.
FR2667724B1 (fr) * 1990-10-09 1992-11-27 Thomson Csf Procede de realisation des metallisations d'electrodes d'un transistor.
FR2697945B1 (fr) * 1992-11-06 1995-01-06 Thomson Csf Procédé de gravure d'une hétérostructure de matériaux du groupe III-V.
WO1994015361A1 (en) * 1992-12-22 1994-07-07 Hughes Aircraft Company Fet chip with heat-extracting bridge
JPH07111272A (ja) * 1993-10-13 1995-04-25 Murata Mfg Co Ltd 電界効果トランジスタ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8093713B2 (en) 2007-02-09 2012-01-10 Infineon Technologies Ag Module with silicon-based layer
US8697497B2 (en) 2007-02-09 2014-04-15 Infineon Technologies Ag Module with silicon-based layer
US8097936B2 (en) 2007-02-27 2012-01-17 Infineon Technologies Ag Component, power component, apparatus, method of manufacturing a component, and method of manufacturing a power semiconductor component

Also Published As

Publication number Publication date
FR2737342A1 (fr) 1997-01-31
JPH0945704A (ja) 1997-02-14
DE69619604D1 (de) 2002-04-11
TW317025B (de) 1997-10-01
EP0756322A1 (de) 1997-01-29
US5719433A (en) 1998-02-17
KR970008669A (ko) 1997-02-24
FR2737342B1 (fr) 1997-08-22
EP0756322B1 (de) 2002-03-06

Similar Documents

Publication Publication Date Title
DE69619604D1 (de) Halbleiter mit integriertem Kühler
DE59611245D1 (de) Leistungshalbleitermodul
DE69527394D1 (de) Halbleiterbaueinheit
DE69433878D1 (de) Kühlkörper
DE69519967D1 (de) Halbleiteranordnung mit zwei Halbleitersubstrate
DE69508046T2 (de) Integrierte halbleiteranordnung
DE69533127D1 (de) Kühlkörper
DE69534584D1 (de) Halbleiter-Bauteil mit Gräben
DE69414498T2 (de) Licht-emittierende Halbleitervorrichtung
DE69511726D1 (de) Halbleiteranordnung mit isoliertem gate
DE69616251T2 (de) Halbleiteranordnung mit Halbleiterleistungselementen
DE69622782T2 (de) Verbindungshalbleiteranordnung mit vermindertem Widerstand
DE69427904T2 (de) Integrierte Halbleiterdiode
DE59610548D1 (de) Leistungshalbleitermodul
DE69619106T2 (de) Homogenes kühlsubstrat
DE69841667D1 (de) Halbleiteranordnungen mit MOS-Gatter
DE9403685U1 (de) Kühlkörper
DE29507687U1 (de) Pumpenträger mit integriertem Kühler
DE9409517U1 (de) Kühlkörper
KR940025770U (ko) 방열판
DE69621809T2 (de) Mit metallocen stabilisiertes alumoxan
DE9321423U1 (de) Kühlkörper mit integrierter Befestigung
DE9315558U1 (de) Kühlkörper
KR970024936U (ko) 라디에이터가 일체화된 인터쿨러
DE9317060U1 (de) Halbleiter-Modul

Legal Events

Date Code Title Description
8364 No opposition during term of opposition