DE69527394D1 - Halbleiterbaueinheit - Google Patents

Halbleiterbaueinheit

Info

Publication number
DE69527394D1
DE69527394D1 DE69527394T DE69527394T DE69527394D1 DE 69527394 D1 DE69527394 D1 DE 69527394D1 DE 69527394 T DE69527394 T DE 69527394T DE 69527394 T DE69527394 T DE 69527394T DE 69527394 D1 DE69527394 D1 DE 69527394D1
Authority
DE
Germany
Prior art keywords
semiconductor assembly
semiconductor
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69527394T
Other languages
English (en)
Other versions
DE69527394T2 (de
Inventor
Hiroshi Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69527394D1 publication Critical patent/DE69527394D1/de
Application granted granted Critical
Publication of DE69527394T2 publication Critical patent/DE69527394T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L2224/3205—Shape
    • H01L2224/32057—Shape in side view
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    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2924/14—Integrated circuits
DE69527394T 1994-04-28 1995-04-27 Halbleiterbaueinheit Expired - Lifetime DE69527394T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6092379A JPH07302858A (ja) 1994-04-28 1994-04-28 半導体パッケージ

Publications (2)

Publication Number Publication Date
DE69527394D1 true DE69527394D1 (de) 2002-08-22
DE69527394T2 DE69527394T2 (de) 2003-02-13

Family

ID=14052795

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69527394T Expired - Lifetime DE69527394T2 (de) 1994-04-28 1995-04-27 Halbleiterbaueinheit

Country Status (5)

Country Link
US (1) US5773882A (de)
EP (1) EP0682369B1 (de)
JP (1) JPH07302858A (de)
KR (1) KR100263292B1 (de)
DE (1) DE69527394T2 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677246A (en) * 1994-11-29 1997-10-14 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices
KR0179802B1 (ko) * 1995-12-29 1999-03-20 문정환 반도체 패키지
JP3431406B2 (ja) * 1996-07-30 2003-07-28 株式会社東芝 半導体パッケージ装置
US5759737A (en) * 1996-09-06 1998-06-02 International Business Machines Corporation Method of making a component carrier
US6281450B1 (en) 1997-06-26 2001-08-28 Hitachi Chemical Company, Ltd. Substrate for mounting semiconductor chips
US5942795A (en) * 1997-07-03 1999-08-24 National Semiconductor Corporation Leaded substrate carrier for integrated circuit device and leaded substrate carrier device assembly
JPH11284007A (ja) * 1998-03-31 1999-10-15 Toshiba Corp 半導体装置及びその製造方法
JPH11307886A (ja) 1998-04-21 1999-11-05 Matsushita Electric Ind Co Ltd フリップチップ接合ランドうねり防止パターン
JP3310617B2 (ja) * 1998-05-29 2002-08-05 シャープ株式会社 樹脂封止型半導体装置及びその製造方法
JP4123572B2 (ja) 1998-06-26 2008-07-23 沖電気工業株式会社 半導体装置
EP1041633B1 (de) 1998-09-09 2008-04-23 Seiko Epson Corporation Halbleiterbauelement, seine herstellung, leiterplatte und elektronischer apparat
JP3565724B2 (ja) * 1998-10-06 2004-09-15 沖電気工業株式会社 フリップチップ型半導体パッケージ及びその装置における樹脂注入方法
DE19847088A1 (de) * 1998-10-13 2000-05-18 Ksw Microtec Ges Fuer Angewand Flächig ausgebildeter Träger für Halbleiter-Chips und Verfahren zu seiner Herstellung
US6218293B1 (en) 1998-11-13 2001-04-17 Micron Technology, Inc. Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
US6352944B1 (en) 1999-02-10 2002-03-05 Micron Technology, Inc. Method of depositing an aluminum nitride comprising layer over a semiconductor substrate
JP2000243876A (ja) * 1999-02-23 2000-09-08 Fujitsu Ltd 半導体装置とその製造方法
US6424033B1 (en) * 1999-08-31 2002-07-23 Micron Technology, Inc. Chip package with grease heat sink and method of making
US6483190B1 (en) * 1999-10-20 2002-11-19 Fujitsu Limited Semiconductor chip element, semiconductor chip element mounting structure, semiconductor chip element mounting device and mounting method
US6242815B1 (en) * 1999-12-07 2001-06-05 Advanced Semiconductor Engineering, Inc. Flexible substrate based ball grid array (BGA) package
KR20010057340A (ko) * 1999-12-22 2001-07-04 박종섭 패드 구조
JP4248761B2 (ja) * 2001-04-27 2009-04-02 新光電気工業株式会社 半導体パッケージ及びその製造方法並びに半導体装置
US6747298B2 (en) * 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
JP4401070B2 (ja) * 2002-02-05 2010-01-20 ソニー株式会社 半導体装置内蔵多層配線基板及びその製造方法
JP4181778B2 (ja) * 2002-02-05 2008-11-19 ソニー株式会社 配線基板の製造方法
DE10244446B4 (de) * 2002-09-24 2004-08-19 Infineon Technologies Ag Halbleiterchipstapel
US6650016B1 (en) * 2002-10-01 2003-11-18 International Business Machines Corporation Selective C4 connection in IC packaging
TWI234210B (en) * 2002-12-03 2005-06-11 Sanyo Electric Co Semiconductor module and manufacturing method thereof as well as wiring member of thin sheet
DE10311965A1 (de) * 2003-03-18 2004-10-14 Infineon Technologies Ag Flip-Chip Anordnung auf einem Substratträger
US7019403B2 (en) * 2003-08-29 2006-03-28 Freescale Semiconductor, Inc. Adhesive film and tacking pads for printed wiring assemblies
US6930400B1 (en) * 2003-10-21 2005-08-16 Integrated Device Technology, Inc. Grid array microelectronic packages with increased periphery
US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US8835952B2 (en) 2005-08-04 2014-09-16 Cree, Inc. Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants
JP2009043823A (ja) * 2007-08-07 2009-02-26 Hitachi-Lg Data Storage Inc 非絶縁シートのプリント配線基板への貼付方法、プリント配線基板、及び、光ディスク装置
US20090108436A1 (en) * 2007-10-31 2009-04-30 Toshio Fujii Semiconductor package
WO2011027186A1 (zh) * 2009-09-02 2011-03-10 先进封装技术私人有限公司 封装结构
TWI427756B (zh) * 2009-09-08 2014-02-21 Advanpack Solutions Pte Ltd 封裝結構
KR20120051991A (ko) * 2010-11-15 2012-05-23 삼성전기주식회사 인쇄회로기판 및 그 제조 방법
US9064880B2 (en) * 2012-12-28 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Zero stand-off bonding system and method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167491A (ja) * 1984-02-10 1985-08-30 株式会社東芝 導体路形成方法
CA1226966A (en) * 1985-09-10 1987-09-15 Gabriel Marcantonio Integrated circuit chip package
US5399898A (en) * 1992-07-17 1995-03-21 Lsi Logic Corporation Multi-chip semiconductor arrangements using flip chip dies
US5399903A (en) * 1990-08-15 1995-03-21 Lsi Logic Corporation Semiconductor device having an universal die size inner lead layout
JP3150351B2 (ja) * 1991-02-15 2001-03-26 株式会社東芝 電子装置及びその製造方法
KR930001365A (ko) * 1991-03-27 1993-01-16 빈센트 죠셉 로너 복합 플립 칩 반도체 소자와 그 제조 및 번-인(burning-in) 방법
US5258648A (en) * 1991-06-27 1993-11-02 Motorola, Inc. Composite flip chip semiconductor device with an interposer having test contacts formed along its periphery
EP0570855B1 (de) * 1992-05-20 2000-04-19 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung eines mehrlagigen Substrats
DE69431023T2 (de) * 1993-09-01 2003-02-06 Toshiba Kawasaki Kk Halbleiteraufbau und Verfahren zur Herstellung

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KR950030325A (ko) 1995-11-24
JPH07302858A (ja) 1995-11-14
EP0682369A1 (de) 1995-11-15
EP0682369B1 (de) 2002-07-17
DE69527394T2 (de) 2003-02-13
KR100263292B1 (ko) 2000-08-01
US5773882A (en) 1998-06-30

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