ITMI942535A0 - Disposizione di semiconduttori per influenzare la tensione di rottura di transistor - Google Patents

Disposizione di semiconduttori per influenzare la tensione di rottura di transistor

Info

Publication number
ITMI942535A0
ITMI942535A0 ITMI942535A ITMI942535A ITMI942535A0 IT MI942535 A0 ITMI942535 A0 IT MI942535A0 IT MI942535 A ITMI942535 A IT MI942535A IT MI942535 A ITMI942535 A IT MI942535A IT MI942535 A0 ITMI942535 A0 IT MI942535A0
Authority
IT
Italy
Prior art keywords
semiconductors
arrangement
breakdown voltage
transistor breakdown
affect transistor
Prior art date
Application number
ITMI942535A
Other languages
English (en)
Inventor
Alfred Goerlach
Hartmut Michel
Anton Mindl
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI942535A0 publication Critical patent/ITMI942535A0/it
Publication of ITMI942535A1 publication Critical patent/ITMI942535A1/it
Application granted granted Critical
Publication of IT1271285B publication Critical patent/IT1271285B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
ITMI942535A 1993-12-17 1994-12-15 Disposizione di semiconduttori per influenzare la tensione di rottura di transistori IT1271285B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4343140A DE4343140B4 (de) 1993-12-17 1993-12-17 Halbleiteranordnung zur Beeinflussung der Durchbruchsspannung von Transistoren

Publications (3)

Publication Number Publication Date
ITMI942535A0 true ITMI942535A0 (it) 1994-12-15
ITMI942535A1 ITMI942535A1 (it) 1996-06-15
IT1271285B IT1271285B (it) 1997-05-27

Family

ID=6505320

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI942535A IT1271285B (it) 1993-12-17 1994-12-15 Disposizione di semiconduttori per influenzare la tensione di rottura di transistori

Country Status (5)

Country Link
US (1) US5466959A (it)
JP (1) JP4018163B2 (it)
DE (1) DE4343140B4 (it)
GB (1) GB2284931B (it)
IT (1) IT1271285B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19526902A1 (de) * 1995-07-22 1997-01-23 Bosch Gmbh Robert Monolithisch integrierte planare Halbleiteranordnung
JP3406214B2 (ja) * 1998-01-30 2003-05-12 ユニ・チャーム株式会社 使い捨ておむつ
JP3539887B2 (ja) * 1999-04-09 2004-07-07 沖電気工業株式会社 半導体装置及びその製造方法
US6614088B1 (en) * 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device
JP5732763B2 (ja) * 2010-07-20 2015-06-10 大日本印刷株式会社 Ｅｓｄ保護素子を備える半導体装置およびｅｓｄ保護素子を備える半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3227536A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Darlington-transistorschaltung
US4916494A (en) * 1984-05-04 1990-04-10 Robert Bosch Gmbh Monolithic integrated planar semiconductor system and process for making the same
US4605948A (en) * 1984-08-02 1986-08-12 Rca Corporation Semiconductor structure for electric field distribution
US5032878A (en) * 1990-01-02 1991-07-16 Motorola, Inc. High voltage planar edge termination using a punch-through retarding implant
DE4039662A1 (de) * 1990-12-12 1992-06-17 Bosch Gmbh Robert Monolithisch integrierte halbleiteranordnung

Also Published As

Publication number Publication date
JPH07201879A (ja) 1995-08-04
US5466959A (en) 1995-11-14
ITMI942535A1 (it) 1996-06-15
IT1271285B (it) 1997-05-27
GB9423889D0 (en) 1995-01-11
GB2284931B (en) 1997-09-03
JP4018163B2 (ja) 2007-12-05
GB2284931A (en) 1995-06-21
DE4343140B4 (de) 2009-12-03
DE4343140A1 (de) 1995-06-22

Similar Documents

Publication Publication Date Title
DE69324871D1 (de) Hochspannungs-MIS-Feldeffektransistor und integrierte Halbleiterschaltung
DE69404500T2 (de) Hochspannungs-MOS-Transistor mit ausgedehntem Drain
DE69418365T2 (de) Hochspannung-MIS-Feldeffekttransistor
ITMI921963A0 (it) Circuito generatore di tensione interna
FI860222A (fi) Puolijohdekomponentti sisältäen korkeajännite-MOS kanavatransistoreita ja matalajännite-MOS kanavatransistoreita
DE69224709D1 (de) Halbleiteranordnung mit verbesserter Durchbruchspannungs-Charakteristik
DE69407852T2 (de) MOSFET mit niedrigdotiertem Drain und mit verbesserter Durchbruchspannungscharakteristik
DE69319833D1 (de) Drain Spannungsverorgungen
EP0822894A4 (en) ANODIZED ALUMINUM SUBSTRATE WITH INCREASED BREAKTHROUGH VOLTAGE
KR960702944A (ko) 저 전압형 트랜지스터를 사용하는 고 전압 전하 펌프(high voltage charge pump using low voltage type transistors)
DE69330542T2 (de) Halbleitertransistor
DE69414305D1 (de) Hochspannungs-Halbleiterstruktur
IT8819563A0 (it) Dispositivo semiconduttore ad alta tensione di rottura.
DE69227239T2 (de) Einbau-anordnung für hochspannungs-/hochleistungs-halbleiter
ITMI942535A0 (it) Disposizione di semiconduttori per influenzare la tensione di rottura di transistor
DE69213213D1 (de) Genauer MOS-Schwellenspannungsgenerator
DE69219405D1 (de) Halbleiteranordnung mit hoher Durchbruchsspannung
DE69131541T2 (de) Halbleiterbauelement mit vergrösserter elektrostatischer Durchbruchspannung
DE69232679T2 (de) Halbleiterbauelement für hohe Durchbruchsspannungen
DE69027463T2 (de) MOS-Feldeffekttransistor mit hoher Durchbruchsspannung
DE69717093D1 (de) Gasisolierte hochspannungs-halbleiterventilanordnung
IT9022448A0 (it) Circuito di controllo di caratteristiche tensione/corrente particolarmente per la protezione di transistori di potenza
DE69330998T2 (de) Schaltung zur Vergrösserung der Durchbruchspannung eines bipolaren Transistors
ITFI910175A0 (it) Generatore di tensione stabilizzata
IT8648692A0 (it) Circuito commutatore di tensione adue livelli

Legal Events

Date Code Title Description
0001 Granted