ITMI20111238A1 - Procedimento per la produzione di un transistor a effetto di campo chemiosensibile - Google Patents
Procedimento per la produzione di un transistor a effetto di campo chemiosensibileInfo
- Publication number
- ITMI20111238A1 ITMI20111238A1 ITMI20111238A ITMI20111238A1 IT MI20111238 A1 ITMI20111238 A1 IT MI20111238A1 IT MI20111238 A ITMI20111238 A IT MI20111238A IT MI20111238 A1 ITMI20111238 A1 IT MI20111238A1
- Authority
- IT
- Italy
- Prior art keywords
- transistor
- procedure
- chemical
- production
- sensitive field
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201010031167 DE102010031167A1 (de) | 2010-07-09 | 2010-07-09 | Herstellungsverfahren für einen chemosensitiven Feldeffekttransistor |
Publications (1)
Publication Number | Publication Date |
---|---|
ITMI20111238A1 true ITMI20111238A1 (it) | 2012-01-10 |
Family
ID=44898765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI20111238 ITMI20111238A1 (it) | 2010-07-09 | 2011-07-04 | Procedimento per la produzione di un transistor a effetto di campo chemiosensibile |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6004614B2 (de) |
DE (1) | DE102010031167A1 (de) |
FR (1) | FR2962592B1 (de) |
IT (1) | ITMI20111238A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012211460A1 (de) * | 2012-07-03 | 2014-01-09 | Robert Bosch Gmbh | Gassensor und Verfahren zum Herstellen eines solchen |
JP6659283B2 (ja) | 2015-09-14 | 2020-03-04 | 株式会社東芝 | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63129666A (ja) * | 1986-11-20 | 1988-06-02 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH03123082A (ja) * | 1989-10-05 | 1991-05-24 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH07263684A (ja) * | 1994-03-25 | 1995-10-13 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法 |
JPH09318569A (ja) * | 1996-05-30 | 1997-12-12 | Tokyo Gas Co Ltd | ガスセンサおよびその製造方法 |
US6218311B1 (en) * | 1998-06-30 | 2001-04-17 | Texas Instruments Incorporated | Post-etch treatment of a semiconductor device |
JP2001116718A (ja) * | 1999-10-18 | 2001-04-27 | Ngk Spark Plug Co Ltd | センサ用電界効果型トランジスタ及びその製造方法 |
JP3774682B2 (ja) * | 2001-06-29 | 2006-05-17 | キヤノン株式会社 | 電子放出素子、電子源および画像形成装置 |
JP4552973B2 (ja) * | 2007-06-08 | 2010-09-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
-
2010
- 2010-07-09 DE DE201010031167 patent/DE102010031167A1/de not_active Withdrawn
-
2011
- 2011-07-04 IT ITMI20111238 patent/ITMI20111238A1/it unknown
- 2011-07-07 FR FR1156164A patent/FR2962592B1/fr not_active Expired - Fee Related
- 2011-07-08 JP JP2011151588A patent/JP6004614B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2962592A1 (fr) | 2012-01-13 |
FR2962592B1 (fr) | 2014-03-14 |
CN102315128A (zh) | 2012-01-11 |
JP2012018166A (ja) | 2012-01-26 |
JP6004614B2 (ja) | 2016-10-12 |
DE102010031167A1 (de) | 2012-01-12 |
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