IT1403137B1 - Metodo di fabbricazione di diodi pin verticali - Google Patents

Metodo di fabbricazione di diodi pin verticali

Info

Publication number
IT1403137B1
IT1403137B1 ITTO2010A000553A ITTO20100553A IT1403137B1 IT 1403137 B1 IT1403137 B1 IT 1403137B1 IT TO2010A000553 A ITTO2010A000553 A IT TO2010A000553A IT TO20100553 A ITTO20100553 A IT TO20100553A IT 1403137 B1 IT1403137 B1 IT 1403137B1
Authority
IT
Italy
Prior art keywords
manufacture
pin diodes
vertical pin
diodes
vertical
Prior art date
Application number
ITTO2010A000553A
Other languages
English (en)
Inventor
Marco Peroni
Alessio Pantellini
Original Assignee
Selex Sistemi Integrati Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Selex Sistemi Integrati Spa filed Critical Selex Sistemi Integrati Spa
Priority to ITTO2010A000553A priority Critical patent/IT1403137B1/it
Priority to CN201110177624.7A priority patent/CN102299069B/zh
Priority to US13/171,053 priority patent/US8580591B2/en
Priority to EP11171779.9A priority patent/EP2400529B1/en
Priority to KR1020110062675A priority patent/KR101831219B1/ko
Priority to ES11171779.9T priority patent/ES2579002T3/es
Publication of ITTO20100553A1 publication Critical patent/ITTO20100553A1/it
Application granted granted Critical
Publication of IT1403137B1 publication Critical patent/IT1403137B1/it
Priority to US14/073,456 priority patent/US8933529B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
ITTO2010A000553A 2010-06-28 2010-06-28 Metodo di fabbricazione di diodi pin verticali IT1403137B1 (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
ITTO2010A000553A IT1403137B1 (it) 2010-06-28 2010-06-28 Metodo di fabbricazione di diodi pin verticali
CN201110177624.7A CN102299069B (zh) 2010-06-28 2011-06-28 制造垂直pin型二极管的方法及垂直pin型二极管
US13/171,053 US8580591B2 (en) 2010-06-28 2011-06-28 Method of manufacturing vertical pin diodes
EP11171779.9A EP2400529B1 (en) 2010-06-28 2011-06-28 Vertical PIN diodes and method of manufacturing them
KR1020110062675A KR101831219B1 (ko) 2010-06-28 2011-06-28 수직 핀 다이오드의 제조방법
ES11171779.9T ES2579002T3 (es) 2010-06-28 2011-06-28 Diodos PIN vertical y método para fabricarlos
US14/073,456 US8933529B2 (en) 2010-06-28 2013-11-06 Method of manufacturing vertical pin diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2010A000553A IT1403137B1 (it) 2010-06-28 2010-06-28 Metodo di fabbricazione di diodi pin verticali

Publications (2)

Publication Number Publication Date
ITTO20100553A1 ITTO20100553A1 (it) 2011-12-29
IT1403137B1 true IT1403137B1 (it) 2013-10-04

Family

ID=43500175

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2010A000553A IT1403137B1 (it) 2010-06-28 2010-06-28 Metodo di fabbricazione di diodi pin verticali

Country Status (6)

Country Link
US (2) US8580591B2 (it)
EP (1) EP2400529B1 (it)
KR (1) KR101831219B1 (it)
CN (1) CN102299069B (it)
ES (1) ES2579002T3 (it)
IT (1) IT1403137B1 (it)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1403137B1 (it) 2010-06-28 2013-10-04 Selex Sistemi Integrati Spa Metodo di fabbricazione di diodi pin verticali
US9048108B2 (en) * 2012-05-22 2015-06-02 International Business Machines Corporation Integrated circuit with on chip planar diode and CMOS devices
CN102796526A (zh) * 2012-08-02 2012-11-28 中国电子科技集团公司第四十六研究所 一种腐蚀磷化铟单晶片的腐蚀液及腐蚀方法
US9270246B1 (en) * 2013-03-13 2016-02-23 Triquint Semiconductor, Inc. Power limiter
CN105378923B (zh) * 2013-07-11 2019-09-27 三菱电机株式会社 半导体装置的制造方法以及pin二极管
KR102237820B1 (ko) 2014-05-14 2021-04-08 삼성전자주식회사 수평형 포토 다이오드, 이를 포함하는 이미지 센서 및 포토 다이오드, 이미지센서의 제조방법
US9349880B2 (en) 2014-06-17 2016-05-24 Globalfoundries Inc. Semiconductor devices with semiconductor bodies having interleaved horizontal portions and method of forming the devices
CN105336757B (zh) * 2015-11-06 2018-05-15 中国计量学院 基于有机二极管的柔性微波能量转换器
KR102395373B1 (ko) * 2016-02-23 2022-05-09 한국전자통신연구원 수직 핀 다이오드
FR3052291B1 (fr) * 2016-06-03 2018-11-23 Stmicroelectronics (Rousset) Sas Procede de fabrication d'un reseau de diodes, en particulier pour une memoire non volatile, et dispositif correspondant.
DE102017121878A1 (de) * 2017-09-21 2019-03-21 Infineon Technologies Austria Ag Leistungsdiode
KR20190068095A (ko) * 2017-12-08 2019-06-18 한양대학교 산학협력단 2단자 수직형 1t-디램 및 그 제조 방법
DE102017011878A1 (de) * 2017-12-21 2019-06-27 3-5 Power Electronics GmbH Stapelförmiges III-V-Halbleiterbauelement
CN108493254B (zh) * 2018-05-07 2024-07-05 南京国博电子股份有限公司 一种应用于高频开关单片电路的pin二极管
US10651110B1 (en) * 2018-12-31 2020-05-12 Juniper Networks, Inc. Efficient heat-sinking in PIN diode
CN110581166A (zh) * 2019-08-07 2019-12-17 福建省福联集成电路有限公司 一种二极管及制作方法
WO2021039161A1 (ja) * 2019-08-30 2021-03-04 株式会社ジャパンディスプレイ 検出装置
CN110648913A (zh) * 2019-10-11 2020-01-03 福建省福联集成电路有限公司 一种砷化镓基的二极管器件结构及制作方法
CN113130664B (zh) * 2021-04-01 2022-07-12 浙江大学 一种新型的pin管微观结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559959B1 (fr) * 1984-02-21 1987-05-22 Thomson Csf Diode hyperfrequence a connexions externes prises au moyen de poutres et son procede de realisation
US5213994A (en) * 1989-05-30 1993-05-25 Motorola, Inc. Method of making high voltage semiconductor device
EP0725447B1 (en) * 1995-02-02 2007-11-14 Sumitomo Electric Industries, Ltd. Pin type light-receiving device and its fabrication process
US6303967B1 (en) * 1998-02-05 2001-10-16 Integration Associates, Inc. Process for producing an isolated planar high speed pin photodiode
JP5076326B2 (ja) * 2006-01-31 2012-11-21 株式会社Ｓｕｍｃｏ シリコンウェーハおよびその製造方法
CN101438418B (zh) * 2006-04-28 2011-01-26 株式会社半导体能源研究所 光电转换元件和光电转换元件制造方法
US7868428B2 (en) * 2008-03-14 2011-01-11 M/A-Com Technology Solutions Holdings, Inc. PIN diode with improved power limiting
IT1403137B1 (it) 2010-06-28 2013-10-04 Selex Sistemi Integrati Spa Metodo di fabbricazione di diodi pin verticali

Also Published As

Publication number Publication date
EP2400529A3 (en) 2013-04-10
US8933529B2 (en) 2015-01-13
EP2400529B1 (en) 2016-04-06
ES2579002T3 (es) 2016-08-03
US20140061876A1 (en) 2014-03-06
CN102299069A (zh) 2011-12-28
ITTO20100553A1 (it) 2011-12-29
KR101831219B1 (ko) 2018-02-22
CN102299069B (zh) 2015-10-21
US20120001305A1 (en) 2012-01-05
EP2400529A2 (en) 2011-12-28
KR20120001644A (ko) 2012-01-04
US8580591B2 (en) 2013-11-12

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