FR3052291B1 - Procede de fabrication d'un reseau de diodes, en particulier pour une memoire non volatile, et dispositif correspondant. - Google Patents

Procede de fabrication d'un reseau de diodes, en particulier pour une memoire non volatile, et dispositif correspondant. Download PDF

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Publication number
FR3052291B1
FR3052291B1 FR1655067A FR1655067A FR3052291B1 FR 3052291 B1 FR3052291 B1 FR 3052291B1 FR 1655067 A FR1655067 A FR 1655067A FR 1655067 A FR1655067 A FR 1655067A FR 3052291 B1 FR3052291 B1 FR 3052291B1
Authority
FR
France
Prior art keywords
manufacturing
nonvolatile memory
corresponding device
diode network
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1655067A
Other languages
English (en)
Other versions
FR3052291A1 (fr
Inventor
Francesco La Rosa
Stephan Niel
Arnaud Regnier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1655067A priority Critical patent/FR3052291B1/fr
Priority to CN201611240241.9A priority patent/CN107464814B/zh
Priority to CN201621453065.2U priority patent/CN206163529U/zh
Priority to US15/365,143 priority patent/US10002906B2/en
Publication of FR3052291A1 publication Critical patent/FR3052291A1/fr
Priority to US16/004,195 priority patent/US10541270B2/en
Application granted granted Critical
Publication of FR3052291B1 publication Critical patent/FR3052291B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR1655067A 2016-06-03 2016-06-03 Procede de fabrication d'un reseau de diodes, en particulier pour une memoire non volatile, et dispositif correspondant. Expired - Fee Related FR3052291B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1655067A FR3052291B1 (fr) 2016-06-03 2016-06-03 Procede de fabrication d'un reseau de diodes, en particulier pour une memoire non volatile, et dispositif correspondant.
CN201611240241.9A CN107464814B (zh) 2016-06-03 2016-11-23 用于非易失性存储器的二极管阵列的制造方法及对应器件
CN201621453065.2U CN206163529U (zh) 2016-06-03 2016-11-23 半导体器件和非易失性存储器
US15/365,143 US10002906B2 (en) 2016-06-03 2016-11-30 Method for fabricating an array of diodes, in particular for a non-volatile memory, and corresponding device
US16/004,195 US10541270B2 (en) 2016-06-03 2018-06-08 Method for fabricating an array of diodes, in particular for a non-volatile memory, and corresponding device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1655067A FR3052291B1 (fr) 2016-06-03 2016-06-03 Procede de fabrication d'un reseau de diodes, en particulier pour une memoire non volatile, et dispositif correspondant.
FR1655067 2016-06-03

Publications (2)

Publication Number Publication Date
FR3052291A1 FR3052291A1 (fr) 2017-12-08
FR3052291B1 true FR3052291B1 (fr) 2018-11-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1655067A Expired - Fee Related FR3052291B1 (fr) 2016-06-03 2016-06-03 Procede de fabrication d'un reseau de diodes, en particulier pour une memoire non volatile, et dispositif correspondant.

Country Status (3)

Country Link
US (2) US10002906B2 (fr)
CN (2) CN107464814B (fr)
FR (1) FR3052291B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3052291B1 (fr) * 2016-06-03 2018-11-23 Stmicroelectronics (Rousset) Sas Procede de fabrication d'un reseau de diodes, en particulier pour une memoire non volatile, et dispositif correspondant.
US11404480B2 (en) * 2019-12-26 2022-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Memory arrays including continuous line-shaped random access memory strips and method forming same

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US6865117B2 (en) * 2000-02-11 2005-03-08 Axon Technologies Corporation Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same
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FR3052291B1 (fr) * 2016-06-03 2018-11-23 Stmicroelectronics (Rousset) Sas Procede de fabrication d'un reseau de diodes, en particulier pour une memoire non volatile, et dispositif correspondant.
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Also Published As

Publication number Publication date
FR3052291A1 (fr) 2017-12-08
CN206163529U (zh) 2017-05-10
CN107464814B (zh) 2021-07-20
US10541270B2 (en) 2020-01-21
US20180294313A1 (en) 2018-10-11
US20170352703A1 (en) 2017-12-07
CN107464814A (zh) 2017-12-12
US10002906B2 (en) 2018-06-19

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