ITMI20111062A1 - Transistori ad effetto di campo per sensori del gas - Google Patents

Transistori ad effetto di campo per sensori del gas

Info

Publication number
ITMI20111062A1
ITMI20111062A1 ITMI20111062A ITMI20111062A1 IT MI20111062 A1 ITMI20111062 A1 IT MI20111062A1 IT MI20111062 A ITMI20111062 A IT MI20111062A IT MI20111062 A1 ITMI20111062 A1 IT MI20111062A1
Authority
IT
Italy
Prior art keywords
field effect
effect transistors
gas sensors
sensors
gas
Prior art date
Application number
Other languages
English (en)
Inventor
Walter Daves
Andreas Krauss
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI20111062A1 publication Critical patent/ITMI20111062A1/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
ITMI20111062 2010-07-09 2011-06-13 Transistori ad effetto di campo per sensori del gas ITMI20111062A1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201010031153 DE102010031153A1 (de) 2010-07-09 2010-07-09 Feldeffekttransistoren für Gassensoren

Publications (1)

Publication Number Publication Date
ITMI20111062A1 true ITMI20111062A1 (it) 2012-01-10

Family

ID=44898736

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI20111062 ITMI20111062A1 (it) 2010-07-09 2011-06-13 Transistori ad effetto di campo per sensori del gas

Country Status (4)

Country Link
CN (1) CN102375014A (it)
DE (1) DE102010031153A1 (it)
FR (1) FR2962546B1 (it)
IT (1) ITMI20111062A1 (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102621210A (zh) * 2012-04-01 2012-08-01 东北师范大学 以空气间隙为绝缘层的场效应气体传感器及其制备方法
DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
DE102013204804A1 (de) 2013-03-19 2014-09-25 Robert Bosch Gmbh Sensorvorrichtung und Verfahren zum Herstellen einer Sensorvorrichtung
EP3267187B1 (en) * 2016-07-08 2020-04-15 Volvo Car Corporation Silicon carbide based field effect gas sensor for high temperature applications

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6246076B1 (en) * 1998-08-28 2001-06-12 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
US7449372B2 (en) * 2004-12-17 2008-11-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device
JP2007066944A (ja) * 2005-08-29 2007-03-15 Nissan Motor Co Ltd 炭化珪素半導体装置及びその製造方法
WO2010115434A1 (en) * 2009-04-06 2010-10-14 Sensic Ab Gas sensor

Also Published As

Publication number Publication date
FR2962546A1 (fr) 2012-01-13
CN102375014A (zh) 2012-03-14
DE102010031153A1 (de) 2012-01-12
FR2962546B1 (fr) 2014-05-16

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