ITMI20012284A1 - Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package - Google Patents

Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package Download PDF

Info

Publication number
ITMI20012284A1
ITMI20012284A1 IT2001MI002284A ITMI20012284A ITMI20012284A1 IT MI20012284 A1 ITMI20012284 A1 IT MI20012284A1 IT 2001MI002284 A IT2001MI002284 A IT 2001MI002284A IT MI20012284 A ITMI20012284 A IT MI20012284A IT MI20012284 A1 ITMI20012284 A1 IT MI20012284A1
Authority
IT
Italy
Prior art keywords
layer
metallization
wettable
gate region
level
Prior art date
Application number
IT2001MI002284A
Other languages
English (en)
Italian (it)
Inventor
Ferruccio Frisina
Antonio Pinto
Angelo Magri
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT2001MI002284A priority Critical patent/ITMI20012284A1/it
Priority to EP02024185A priority patent/EP1310993A3/en
Priority to US10/285,363 priority patent/US7126173B2/en
Priority to JP2002316673A priority patent/JP2003152160A/ja
Publication of ITMI20012284A1 publication Critical patent/ITMI20012284A1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/621—Structures or relative sizes of strap connectors
    • H10W72/622—Multilayered strap connectors, e.g. having a coating on a lowermost surface of a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Junction Field-Effect Transistors (AREA)
IT2001MI002284A 2001-10-30 2001-10-30 Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package ITMI20012284A1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT2001MI002284A ITMI20012284A1 (it) 2001-10-30 2001-10-30 Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package
EP02024185A EP1310993A3 (en) 2001-10-30 2002-10-30 Method for enhancing the electric connection between a power electronic device and its package
US10/285,363 US7126173B2 (en) 2001-10-30 2002-10-30 Method for enhancing the electric connection between a power electronic device and its package
JP2002316673A JP2003152160A (ja) 2001-10-30 2002-10-30 電子パワーデバイス及びその製作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2001MI002284A ITMI20012284A1 (it) 2001-10-30 2001-10-30 Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package

Publications (1)

Publication Number Publication Date
ITMI20012284A1 true ITMI20012284A1 (it) 2003-04-30

Family

ID=11448561

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001MI002284A ITMI20012284A1 (it) 2001-10-30 2001-10-30 Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package

Country Status (4)

Country Link
US (1) US7126173B2 (https=)
EP (1) EP1310993A3 (https=)
JP (1) JP2003152160A (https=)
IT (1) ITMI20012284A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006025959B4 (de) * 2006-06-02 2010-03-04 Infineon Technologies Ag Leistungshalbleiteranordnung mit vorderseitig aufgelötetem Clip und Verfahren zur Herstellung einer solchen
US9589937B2 (en) * 2014-08-08 2017-03-07 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd Semiconductor cooling method and method of heat dissipation

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4067041A (en) 1975-09-29 1978-01-03 Hutson Jearld L Semiconductor device package and method of making same
US4561468A (en) * 1982-04-19 1985-12-31 Valcor Engineering Corporation Valve for use in jet engine systems and the like
DE3224642A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit injektorzone
US4561168A (en) * 1982-11-22 1985-12-31 Siliconix Incorporated Method of making shadow isolated metal DMOS FET device
EP0255970B1 (en) * 1986-08-08 1993-12-15 Philips Electronics Uk Limited A method of manufacturing an insulated gate field effect transistor
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
EP0693773B1 (en) * 1994-07-14 2005-02-09 STMicroelectronics S.r.l. VDMOS power device and manufacturing process thereof
US5767546A (en) 1994-12-30 1998-06-16 Siliconix Incorporated Laternal power mosfet having metal strap layer to reduce distributed resistance
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US5681761A (en) * 1995-12-28 1997-10-28 Philips Electronics North America Corporation Microwave power SOI-MOSFET with high conductivity metal gate
US6342715B1 (en) * 1997-06-27 2002-01-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
DE69832359T2 (de) * 1997-07-19 2006-08-03 Koninklijke Philips Electronics N.V. Halbleitervorrichtung -anordnung und -schaltungen
US6040626A (en) * 1998-09-25 2000-03-21 International Rectifier Corp. Semiconductor package
US6940142B2 (en) * 2001-07-02 2005-09-06 Xerox Corporation Low data line capacitance image sensor array using air-gap metal crossover
JP2004055812A (ja) * 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
JP2006049341A (ja) * 2004-07-30 2006-02-16 Renesas Technology Corp 半導体装置およびその製造方法
US7274092B2 (en) * 2005-09-13 2007-09-25 Infineon Technologies, Ag Semiconductor component and method of assembling the same

Also Published As

Publication number Publication date
EP1310993A3 (en) 2003-07-16
US20030100154A1 (en) 2003-05-29
JP2003152160A (ja) 2003-05-23
US7126173B2 (en) 2006-10-24
EP1310993A2 (en) 2003-05-14

Similar Documents

Publication Publication Date Title
US10714447B2 (en) Electrode terminal, semiconductor device, and power conversion apparatus
TW390004B (en) Device for storing semiconductor chip and method for making the same
KR101454321B1 (ko) 절연 금속 기판을 구비하는 반도체 패키지 및 그 제조방법
CN112771667A (zh) 半导体装置及半导体装置的制造方法
US12100665B2 (en) Semiconductor package structure and manufacturing method thereof
JP3801989B2 (ja) リードフレームパッドから張り出しているダイを有する半導体装置パッケージ
US6072230A (en) Exposed leadframe for semiconductor packages and bend forming method of fabrication
JP2000294711A (ja) リードフレーム
CN112805827A (zh) 半导体装置以及半导体装置的制造方法
ITMI20012284A1 (it) Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package
US9786626B2 (en) Semiconductor device with a wire bonding and a sintered region, and manufacturing process thereof
JP7825430B2 (ja) リードフレーム及びそれを用いた半導体装置
CN113257769A (zh) 封装结构
JP5587464B2 (ja) 半導体装置の製造方法
CN101211886A (zh) 无外引脚导线架的封装结构
JP2024135266A (ja) リードフレーム及びそれを用いた半導体装置
JP2020503688A (ja) 半導体チップを接続する第１および第２接続要素を備えた半導体モジュールおよび製造方法
CN121712351A (zh) 具有弯曲夹片的晶体管芯片封装
JPS62144349A (ja) 半導体装置用リ−ドフレ−ムおよびその製造方法
JP2025184821A (ja) 電子部品上にワイヤボンディングされたファンアウト型ウェーハレベルパッケージングユニットを備えるモジュール
JPH04168759A (ja) 半導体装置及びリードフレームとその製造方法
CN102403291B (zh) 半导体零件及制造方法
KR100525091B1 (ko) 반도체 패키지
CN115863291A (zh) 半导体设备及其封装方法
JPS635253Y2 (https=)