IT993383B - Transistore ad effetto di campo a giunzione di tipo controllato - Google Patents
Transistore ad effetto di campo a giunzione di tipo controllatoInfo
- Publication number
- IT993383B IT993383B IT2926973A IT2926973A IT993383B IT 993383 B IT993383 B IT 993383B IT 2926973 A IT2926973 A IT 2926973A IT 2926973 A IT2926973 A IT 2926973A IT 993383 B IT993383 B IT 993383B
- Authority
- IT
- Italy
- Prior art keywords
- field effect
- effect transistor
- junction field
- controlled junction
- controlled
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4744573A JPS49134282A (de) | 1973-04-25 | 1973-04-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT993383B true IT993383B (it) | 1975-09-30 |
Family
ID=12775330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2926973A IT993383B (it) | 1973-04-25 | 1973-09-24 | Transistore ad effetto di campo a giunzione di tipo controllato |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS49134282A (de) |
| CA (1) | CA993567A (de) |
| DE (1) | DE2339444C2 (de) |
| FR (1) | FR2227645B1 (de) |
| GB (1) | GB1412904A (de) |
| IT (1) | IT993383B (de) |
| NL (1) | NL7312535A (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2503800C2 (de) * | 1975-01-30 | 1984-02-16 | Sony Corp., Tokyo | Sperrschicht-Feldeffekttransistor |
| JPS51129184A (en) * | 1975-05-02 | 1976-11-10 | Nec Corp | Vertical type field efect transistor |
| JPS5342683A (en) * | 1976-09-30 | 1978-04-18 | Mitsubishi Electric Corp | Vertical field effect transistor |
| JPS5846874B2 (ja) * | 1977-04-27 | 1983-10-19 | 三菱電機株式会社 | 接合型電界効果トランジスタ |
| JPS5680172A (en) * | 1979-12-04 | 1981-07-01 | Seiko Epson Corp | Semiconductor device |
| FR2480505A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication |
| FR2480502A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1539877A1 (de) * | 1965-11-19 | 1969-12-11 | Itt Ind Gmbh Deutsche | Schaltbares Halbleiterbauelement |
| FR2147883B1 (de) * | 1971-08-05 | 1977-01-28 | Teszner Stanislas |
-
1973
- 1973-04-25 JP JP4744573A patent/JPS49134282A/ja active Pending
- 1973-08-01 GB GB3662573A patent/GB1412904A/en not_active Expired
- 1973-08-03 DE DE19732339444 patent/DE2339444C2/de not_active Expired
- 1973-08-27 FR FR7330927A patent/FR2227645B1/fr not_active Expired
- 1973-09-11 NL NL7312535A patent/NL7312535A/xx not_active Application Discontinuation
- 1973-09-24 IT IT2926973A patent/IT993383B/it active
- 1973-12-13 CA CA188,102A patent/CA993567A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2339444A1 (de) | 1974-10-31 |
| FR2227645A1 (de) | 1974-11-22 |
| CA993567A (en) | 1976-07-20 |
| NL7312535A (de) | 1974-10-29 |
| DE2339444C2 (de) | 1985-05-15 |
| JPS49134282A (de) | 1974-12-24 |
| FR2227645B1 (de) | 1977-08-05 |
| GB1412904A (en) | 1975-11-05 |
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